公开(公告)号：WO2008048303A2

公开(公告)日：2008-04-24

申请号：PCT/US2006/045965

申请日：2006-11-30

Applicant: KYMA TECHNOLOGIES, INC. ,  HANSER, Andrew, D. ,  LIU, Lianghong ,  PREBLE, Edward, A. ,  TSVETKOV, Denis ,  WILLIAMS, Nathaniel, Mark ,  XU, Xueping

Inventor： HANSER, Andrew, D. ,  LIU, Lianghong ,  PREBLE, Edward, A. ,  TSVETKOV, Denis ,  WILLIAMS, Nathaniel, Mark ,  XU, Xueping

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L21/02694 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/0688 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.

Abstract translation: 用于制造光电子器件（例如发光二极管（LED），激光二极管（LD）和光电探测器）的III族（Al，Ga，In）N单晶，制品和薄膜以及电子器件 （例如高电子迁移率晶体管（HEMT）），以及用于制造这种晶体，制品和薄膜的方法。

公开(公告)号：WO2012116202A3

公开(公告)日：2012-08-30

申请号：PCT/US2012/026352

申请日：2012-02-23

Applicant: EVERGREEN SOLAR, INC. ,  VAN GLABBEEK, Leo ,  LIU, Lianghong ,  HUANG, Weidong ,  HITCHCOCK, David ,  YAMARTINO, Stephen

Inventor： VAN GLABBEEK, Leo ,  LIU, Lianghong ,  HUANG, Weidong ,  HITCHCOCK, David ,  YAMARTINO, Stephen

IPC: C30B15/34

Abstract: A method of forming a sheet wafer 1) passes at least two filaments through a molten material to produce a partially formed sheet wafer, 2) directs a cooling fluid at a flow rate toward the partially formed sheet wafer to convectively cool a given portion of the partially formed sheet wafer, and 3) monitors the thickness of the given portion of the partially formed sheet wafer. To ensure appropriate thicknesses of the wafer, the method controls the flow rate of the cooling fluid as a function of the thickness of the given portion of the partially formed sheet wafer.

公开(公告)号：WO2008048303A3

公开(公告)日：2008-07-03

申请号：PCT/US2006045965

申请日：2006-11-30

Applicant: KYMA TECHNOLOGIES INC ,  HANSER ANDREW D ,  LIU LIANGHONG ,  PREBLE EDWARD A ,  TSVETKOV DENIS ,  WILLIAMS NATHANIEL MARK ,  XU XUEPING

Inventor： HANSER ANDREW D ,  LIU LIANGHONG ,  PREBLE EDWARD A ,  TSVETKOV DENIS ,  WILLIAMS NATHANIEL MARK ,  XU XUEPING

IPC: H01L21/44

CPC classification number: H01L21/02694 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/0688 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.

Abstract translation: 用于制造光电子器件（如发光二极管（LED），激光二极管（LD））和光电检测器的III族（Al，Ga，In）N单晶，制品和膜以及电子器件（如高电子迁移率晶体管 由III-V族氮化物组成的HEMT）以及制造这种晶体，制品和膜的方法。

公开(公告)号：WO2012116202A2

公开(公告)日：2012-08-30

申请号：PCT/US2012026352

申请日：2012-02-23

Applicant: EVERGREEN SOLAR INC ,  VAN GLABBEEK LEO ,  LIU LIANGHONG ,  HUANG WEIDONG ,  HITCHCOCK DAVID ,  YAMARTINO STEPHEN

Inventor： VAN GLABBEEK LEO ,  LIU LIANGHONG ,  HUANG WEIDONG ,  HITCHCOCK DAVID ,  YAMARTINO STEPHEN

IPC: B29C39/14 ,  B29C51/42

CPC classification number: C30B15/007 ,  C30B15/005 ,  C30B29/06

Abstract: A method of forming a sheet wafer 1) passes at least two filaments through a molten material to produce a partially formed sheet wafer, 2) directs a cooling fluid at a flow rate toward the partially formed sheet wafer to convectively cool a given portion of the partially formed sheet wafer, and 3) monitors the thickness of the given portion of the partially formed sheet wafer. To ensure appropriate thicknesses of the wafer, the method controls the flow rate of the cooling fluid as a function of the thickness of the given portion of the partially formed sheet wafer.

Abstract translation: 一种形成片状晶片的方法1）使至少两根细丝通过熔融材料，以产生部分成形的片状晶片，2）以朝向部分成形片状晶片的流速引导冷却流体对流地冷却 部分形成的片状晶片，以及3）监视部分成形的片状晶片的给定部分的厚度。 为了确保晶片的适当厚度，该方法控制冷却流体的流量作为部分成形的薄片晶片的给定部分的厚度的函数。

公开(公告)号：WO2009035648A1

公开(公告)日：2009-03-19

申请号：PCT/US2008/010638

申请日：2008-09-12

Applicant: KYMA TECHNOLOGIES, INC. ,  HANSER, Andrew, D. ,  PREBLE, Edward, A. ,  LIU, Lianghong ,  CLITES, Terry, L. ,  EVANS, Keith, R.

Inventor： HANSER, Andrew, D. ,  PREBLE, Edward, A. ,  LIU, Lianghong ,  CLITES, Terry, L. ,  EVANS, Keith, R.

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/0075 ,  C30B25/00 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L33/16

Abstract: Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal. The seed crystal may have crystalline edges of equivalent crystallographic orientation.

Abstract translation: 通过在（Al，Ga，In）N晶种上重新生长（Al，Ga，In）N晶体来制造非极性或半极性（Al，Ga，In）N衬底，其中种子的大小 晶体在横向和垂直方向上膨胀或增加，导致用于光电子和微电子器件的非极性和半极性基底的较大尺寸。 一个或多个非极性或半极性底物可以从再生晶体中切片。 横向生长速率可能大于垂直生长速率。 晶种可以是非极性晶种。 晶种可具有等同晶体取向的晶体边缘。