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公开(公告)号：WO2008076319A1
公开(公告)日：2008-06-26
申请号：PCT/US2007/025525
申请日：2007-12-13
Applicant: MOMENTIVE PERFORMANCE MATERIALS , VAIDHYANATHAN, Balasubramaniam , JOSHI, Salil, Mohan , RAMASESHA, Sheela, Kollali , NAGESH, Mamatha , LOU, Victor, Lienkong , DALAKOS, George, Theodore , WITTBRODT, Michael, John , ZHONG, Dalong
Inventor： VAIDHYANATHAN, Balasubramaniam , JOSHI, Salil, Mohan , RAMASESHA, Sheela, Kollali , NAGESH, Mamatha , LOU, Victor, Lienkong , DALAKOS, George, Theodore , WITTBRODT, Michael, John , ZHONG, Dalong
CPC classification number: H01L21/67103 , C03C8/02 , C03C8/08 , C03C8/24 , H01L21/67098 , H05B3/143 , H05B3/283
Abstract: A wafer processing apparatus, including a heater apparatus, is provided. The heater apparatus includes a coating layer; and a seal structure in contact with the coating layer. The seal structure is formed from a seal formable material. The seal formable material includes at least one of a YASB glassy composition, a CGYP glassy composition, or a combination of the YASB glassy composition and the CGYP glassy composition. A method and device are also included.
Abstract translation: 提供了包括加热器装置的晶片处理装置。 加热器装置包括涂层; 以及与涂层接触的密封结构。 密封结构由可密封成型材料形成。 可密封成型材料包括YASB玻璃组合物，CGYP玻璃组合物或YASB玻璃组合物和CGYP玻璃组合物的组合中的至少一种。 还包括一种方法和装置。
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公开(公告)号：WO2009002635A2
公开(公告)日：2008-12-31
申请号：PCT/US2008/064178
申请日：2008-05-20
Applicant: GENERAL ELECTRIC COMPANY , MCNULTY, Thomas, Francis , LEMAN, John, Thomas , LOU, Victor, Lienkong , MENDICINO, Frank, Dominic , SHUBA, Roman , D'EVELYN, Mark, Philip , LEWIS, Larry, Neil , HEINRICH VAN DONGEREN, Johan , MENDICINO, Frank, Dominic
Inventor： MCNULTY, Thomas, Francis , LEMAN, John, Thomas , LOU, Victor, Lienkong , MENDICINO, Frank, Dominic , SHUBA, Roman , D'EVELYN, Mark, Philip , LEWIS, Larry, Neil , HEINRICH VAN DONGEREN, Johan , MENDICINO, Frank, Dominic
IPC: C01B33/021 , H01L31/02
CPC classification number: C01B33/025 , C01B33/023 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.
Abstract translation: 公开了形成高纯度元素硅的方法。 该方法包括加热硅胶组合物或由硅胶组合物衍生的中间体组合物的步骤，其中硅胶组合物或中间体组合物包含至少约5重量％的碳，加热温度高于约1550℃ C。 加热步骤导致包括元素硅的产品的生产。 本发明的另一方面涉及一种制造光伏电池的方法。 该方法包括从如本公开所述制备的元素硅形成半导体衬底的步骤。 然后进行附加步骤以制造光伏器件。
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公开(公告)号：WO2009002635A3
公开(公告)日：2010-07-29
申请号：PCT/US2008064178
申请日：2008-05-20
Applicant: GEN ELECTRIC , MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LOU VICTOR LIENKONG , MENDICINO FRANK DOMINIC , SHUBA ROMAN , D EVELYN MARK PHILIP , LEWIS LARRY NEIL , HEINRICH VAN DONGEREN JOHAN
Inventor： MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LOU VICTOR LIENKONG , MENDICINO FRANK DOMINIC , SHUBA ROMAN , D EVELYN MARK PHILIP , LEWIS LARRY NEIL , HEINRICH VAN DONGEREN JOHAN
IPC: C01B33/021 , H01L31/02
CPC classification number: C01B33/025 , C01B33/023 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.
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Patent Agency Ranking
公开(公告)号：WO2009002635A8
公开(公告)日：2010-12-02
申请号：PCT/US2008064178
申请日：2008-05-20
Applicant: GEN ELECTRIC , MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LEWIS LARRY NEIL , D EVELYN MARK PHILIP , LOU VICTOR LIENKONG , SHUBA ROMAN , LEWIS KENRICK MARTIN , MENDICINO FRANK DOMINIC , HEINRICH VAN DONGEREN JOHAN
Inventor： MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LEWIS LARRY NEIL , D EVELYN MARK PHILIP , LOU VICTOR LIENKONG , SHUBA ROMAN , LEWIS KENRICK MARTIN , MENDICINO FRANK DOMINIC , HEINRICH VAN DONGEREN JOHAN
IPC: C01B33/021 , H01L31/02
CPC classification number: C01B33/025 , C01B33/023 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.
Abstract translation: 公开了一种形成高纯度元素硅的方法。 该方法包括加热硅胶组合物或源自硅胶组合物的中间组合物的步骤，其中硅胶组合物或中间组合物包含至少约5重量％的碳，并且加热温度高于约1550℃ C。 加热步骤导致生产包含元素硅的产品。 本发明的另一方面涉及一种制造光伏电池的方法。 该方法包括由如本公开所述制备的元素硅形成半导体衬底的步骤。 然后进行额外的步骤来制造光伏器件。
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公开(公告)号：WO2009002635A9
公开(公告)日：2010-09-30
申请号：PCT/US2008064178
申请日：2008-05-20
Applicant: GEN ELECTRIC , MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LOU VICTOR LIENKONG , MENDICINO FRANK DOMINIC , SHUBA ROMAN , D EVELYN MARK PHILIP , LEWIS LARRY NEIL , HEINRICH VAN DONGEREN JOHAN
Inventor： MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LOU VICTOR LIENKONG , MENDICINO FRANK DOMINIC , SHUBA ROMAN , D EVELYN MARK PHILIP , LEWIS LARRY NEIL , HEINRICH VAN DONGEREN JOHAN
IPC: C01B33/021 , H01L31/02
CPC classification number: C01B33/025 , C01B33/023 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.
Abstract translation: 公开了形成高纯度元素硅的方法。 该方法包括加热硅胶组合物或由硅胶组合物衍生的中间体组合物的步骤，其中硅胶组合物或中间体组合物包含至少约5重量％的碳，加热温度高于约1550℃ C。 加热步骤导致包括元素硅的产品的生产。 本发明的另一方面涉及一种制造光伏电池的方法。 该方法包括从如本公开所述制备的元素硅形成半导体衬底的步骤。 然后进行附加步骤以制造光伏器件。
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6.发明申请
公开(公告)号：WO2009002636A1
公开(公告)日：2008-12-31
申请号：PCT/US2008/064180
申请日：2008-05-20
Applicant: GENERAL ELECTRIC COMPANY , MCNULTY, Thomas, Francis , LEMAN, John, Thomas , LEWIS, Larry, Neil , D'EVELYN, Mark, Philip , LOU, Victor, Lienkong , SHUBA, Roman
Inventor： MCNULTY, Thomas, Francis , LEMAN, John, Thomas , LEWIS, Larry, Neil , D'EVELYN, Mark, Philip , LOU, Victor, Lienkong , SHUBA, Roman
IPC: C01B33/025
CPC classification number: C01B33/025
Abstract: A process for the manufacture of high-purity elemental silicon is described. The process includes the step of preparing a silica gel composition by reacting at least one organosilane compound with an aqueous composition, so as to form granules of the silica gel. A hydrocarbon species is then decomposed by way of a hydrocarbon cracking reaction in the presence of the silica gel composition, so that carbon resulting from the decomposition of the hydrocarbon species is deposited on the granules of the gel composition. Heating of the carbon-containing silica gel composition to an elevated temperature produces the elemental silicon product. Related methods for making photovoltaic cells, using the elemental silicon, are also described.
Abstract translation: 描述了制造高纯度元素硅的方法。 该方法包括通过使至少一种有机硅烷化合物与水性组合物反应制备硅胶组合物的步骤，以形成硅胶颗粒。 然后在硅胶组合物的存在下通过烃裂解反应将烃类分解，使得由烃类分解产生的碳沉积在凝胶组合物的颗粒上。 将含碳硅胶组合物加热至高温产生元素硅产物。 还描述了使用元素硅制造光伏电池的相关方法。
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公开(公告)号：WO2008018956A3
公开(公告)日：2008-04-10
申请号：PCT/US2007015026
申请日：2007-06-28
Applicant: MOMENTIVE PERFORMANCE MAT INC , LOU VICTOR LIENKONG , DALAKOS GEORGE THEODORE , SCHAEPKENS MARC
Inventor： LOU VICTOR LIENKONG , DALAKOS GEORGE THEODORE , SCHAEPKENS MARC
IPC: H01L21/687
CPC classification number: H01L21/68757 , C03C3/062 , C03C3/095 , C03C4/20
Abstract: A processing apparatus for use in a corrosive operating environment at a temperature range of 25 - 1500 0 C is provided. The apparatus has protective coating structure that includes a glassy material. The glassy material includes at least one of yttrium, cerium, or gadolinium; and aluminum and silicon. The coating composition resists etching by a harsh environment.
Abstract translation: 提供了在25-1500℃的温度范围内的腐蚀性操作环境中使用的处理装置。 该设备具有包含玻璃质材料的保护涂层结构。 玻璃质材料包括钇，铈或钆中的至少一种; 和铝和硅。 该涂料组合物抵抗恶劣环境下的蚀刻。
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公开(公告)号：WO2008018956A2
公开(公告)日：2008-02-14
申请号：PCT/US2007/015026
申请日：2007-06-28
Applicant: MOMENTIVE PERFORMANCE MATERIALS, INC. , LOU, Victor, Lienkong , DALAKOS, George, Theodore , SCHAEPKENS, Marc
Inventor： LOU, Victor, Lienkong , DALAKOS, George, Theodore , SCHAEPKENS, Marc
IPC: H01L21/683 , C23C16/458
CPC classification number: H01L21/68757 , C03C3/062 , C03C3/095 , C03C4/20
Abstract: A processing apparatus for use in a corrosive operating environment at a temperature range of 25 - 1500 0 C is provided. The apparatus has protective coating structure that includes a glassy material. The glassy material includes at least one of yttrium, cerium, or gadolinium; and aluminum and silicon. The coating composition resists etching by a harsh environment.
Abstract translation: 提供了一种在温度范围为25-1500℃的腐蚀性操作环境中使用的加工设备。 该装置具有包括玻璃状材料的保护涂层结构。 玻璃状材料包括钇，铈或钆中的至少一种; 和铝和硅。 涂料组合物可以抵抗恶劣环境的蚀刻。
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