公开(公告)号：WO2006020153A3

公开(公告)日：2006-04-27

申请号：PCT/US2005025330

申请日：2005-07-15

Applicant: NEOPAD TECHNOLOGIES CORP ,  DEOPURA MANISH ,  VAIDYA HEM M ,  ROY PRADIP K

Inventor： DEOPURA MANISH ,  VAIDYA HEM M ,  ROY PRADIP K

IPC: B24D18/00 ,  B24B37/04 ,  B24D13/14 ,  B29C33/40 ,  B29C33/42 ,  B29C33/56 ,  B29C41/02

CPC classification number: B24B37/26 ,  B24D15/04 ,  B24D18/0009 ,  B29C33/3842 ,  B29C33/405 ,  B29C33/424 ,  B29C33/565 ,  B29K2083/00 ,  B33Y80/00

Abstract: Methods for producing in-situ grooves in CMP pads are provided. In general, the methods for producing in-situ grooves comprise the steps of patterning a silicone lining (206), placing the silicone lining (206) in. or on, a mold (200), adding CMP pad material to the silicone lining (206), and allowing the CMP pad to solidify. CMP pads comprising novel groove designs are also described. For example, described here are CMP pads comprising concentric circular grooves and axially curved grooves, reverse logarithmic grooves, overlapping circular grooves, lassajous groves, double spiral grooves, and multiply overlapping axially curved grooves. The CMP pads may be made from polyurethane, and the grooves produced therein may be made by a method from the group consisting of silicone lining, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.

Abstract translation: 提供了用于在CMP垫中产生原位凹槽的方法。 通常，用于生产原位槽的方法包括将硅衬里（206）图案化，将硅衬里（206）放置在模具（200）中或其上的步骤，将CMP垫材料添加到硅衬里（ 206），并且允许CMP垫固化。 还描述了包括新颖凹槽设计的CMP垫。 例如，这里描述的是包括同心圆形槽和轴向弯曲槽，反向对数槽，重叠圆形槽，拉索格，双螺旋槽和多重重叠的轴向曲线槽的CMP垫。 CMP垫可以由聚氨酯制成，并且其中产生的凹槽可以由以下方法制成：由硅胶衬里，激光书写，水射流切割，3-D印刷，热成型，真空成型，微接触印刷， 热冲压及其混合物。

公开(公告)号：WO2004087375A8

公开(公告)日：2004-12-09

申请号：PCT/US2004009535

申请日：2004-03-25

Applicant: NEOPAD TECHNOLOGIES CORP ,  MISRA SUDHANSHU ,  ROY PRADIP K

Inventor： MISRA SUDHANSHU ,  ROY PRADIP K

IPC: B24B37/04 ,  B24B49/02 ,  B24B53/007

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B37/20 ,  B24B49/02

Abstract: A polishing (102) pad for chemical mechanical planarization of a film on a substrate is customized by obtaining one or more characteristics of a structure on a substrate. For example, when the structure is a chip formed on a semiconductor wafer (104), the one or more characteristics of the structure can include chip size, pattern density, chip architecture, film material, film topography, and the like. Based on the one or more characteristics of the structure, a value for the one or more chemical or physical properties of the pad (102) is selected. For example, the one or more chemical or physical properties of the pad can include pad material hardness, thickness, surface grooving, pore size, porosity, Youngs modulus, compressibility, asperity, and the like.

Abstract translation: 通过在衬底上获得结构的一个或多个特性来定制用于衬底上的膜的化学机械平坦化的抛光垫（102）。 例如，当结构是形成在半导体晶片（104）上的芯片时，该结构的一个或多个特性可以包括芯片尺寸，图案密度，芯片结构，薄膜材料，薄膜形貌等。 基于结构的一个或多个特性，选择垫（102）的一种或多种化学或物理性质的值。 例如，衬垫的一种或多种化学或物理性质可以包括衬垫材料硬度，厚度，表面开槽，孔径，孔隙率，杨氏模量，可压缩性，粗糙度等。

公开(公告)号：WO2005000529A8

公开(公告)日：2005-03-17

申请号：PCT/US2004017638

申请日：2004-06-03

Applicant: NEOPAD TECHNOLOGIES CORP ,  MISRA SUDHANSHU ,  ROY PRADIP K ,  DEOPURA MANISH

Inventor： MISRA SUDHANSHU ,  ROY PRADIP K ,  DEOPURA MANISH

IPC: B24B37/24 ,  B24D7/14 ,  B24B37/04

CPC classification number: B24B37/24 ,  B24D7/14

Abstract: The material removal rate, defectivity, erosion, and dishing and the effective planarization length of a CMP process depend on the local tribology (hardness, compliances) and physical properties (pore size & density, asperities) of the pad material. Graded pads exhibit spatial modulation in various material/tribological properties customized to planarize:(i) Dissimilar material stacks such as metal/barrier or oxide/nitride [STI] withminimum dishing, erosion, over polish and nanotopography.(ii) Specialized materials (low-k, strain silicon and SOI) with minimum erosion and slurry selectivity. (iii) Devices with complex design and architecture (system-on a-chip and vertical gate) with varying pattern density and chip sizes. Several types of grading described here include annular, island, step and continuous grading. The pad grading design for a CMP process for a particular slurry chemistry and wafer sweep over the pad is based on local pad material (hardness, compliances, pore size and asperities) properties. Such functionally graded polymeric pads are expected to have significant impact in planarizing scaled (sub-100 nm) silicon ICs, disk drive, micromachine (MEMs) and nanocomposite substrates.

Abstract translation: CMP工艺的材料去除率，缺陷率，侵蚀和凹陷以及有效的平坦化长度取决于焊盘材料的局部摩擦学（硬度，一致性）和物理性质（孔径和密度，粗糙度）。 分级垫表现出各种材料/摩擦学特性的空间调制，用于平面化：（i）不相似的材料堆栈，例如金属/阻挡层或氧化物/氮化物[STI]，具有最小的凹陷，侵蚀，超过抛光和纳米形貌。（ii）专业材料 -k，应变硅和SOI），具有最小的侵蚀和浆料选择性。 （iii）具有复杂设计和架构（片上系统和垂直门）的设备，具有不同的图案密度和芯片尺寸。 这里描述的几种类型的分级包括环形，岛状，台阶和连续分级。 用于特定浆料化学和CMP上的晶片扫描的CMP工艺的垫分级设计基于局部焊盘材料（硬度，一致性，孔径和粗糙度）性质。 预期这种功能分级的聚合物焊盘在平坦化尺度（亚100nm）硅IC，磁盘驱动器，微机械（MEM）和纳米复合材料基板方面具有显着的影响。