Abstract:
L'invention concerne une méthode de façonnage de feuilles de matériau verrier, caractérisée en ce que le façonnage est effectué à l'aide d'une meule munie de plusieurs gorges, le façonnage étant effectué, d'une feuille de matériau verrier à l'autre, en alternant d'une gorge à l'autre de ladite meule. L'invention concerne également une opération d'avivage, permettant d'aviver ladite meule multi-gorges, l'avivage étant effectué simultanément pour plusieurs gorges de ladite meule multi-gorges à l'aide d'un même outil d'avivage, et concerne l'outil d'avivage utilisé, présentant une épaisseur d'au moins 4 mm.
Abstract:
Schleifvorrichtung (1) zum maschinellen Schleifen von Rotorblättern (100) für Windkraftanlagen, aufweisend mindestens einen Industrieroboter (30) und eine Schleifeinheit (10, 50, 70), die vom Industrieroboter (30) geführt wird, wobei die Schleifeinheit (10, 50, 70) ein Schleifmittel (12, 52) und eine Reinigungsvorrichtung (20) aufweist, die das Schleifmittel (12, 52) an dessen Schleifoberfläche (64, 53) reinigt.
Abstract:
A CMP system make repeatable measurements of eccentric forces applied to carriers for wafer or conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such carrier. An initial coaxial relationship between an axis of rotation and a carrier axis (212) is maintained during application of the eccentric force (FP-W), such that a sensor (263) is enabled to make repeatable measurements, of the eccentric forces, and the carrier (208) may be a wafer or a puck carrier. Such initial coaxial relationship is maintained by alinear bearing assembly (232) mounted between the carrier (208) and thsensor (263). The linear bearing assembly is provided as an array of separate linear bearing assemblies, wherein each separate linear bearing assembly is dimensioned independently of the diameter, of a wafer or puck carried by the carrier. The linear bearing assembly may be assembled with a retainer ring (282).
Abstract:
The present invention provides an improved planarization apparatus for chemical mechanical planarization. In an exemplary embodiment, the invention provides an apparatus having a back support (118) operatively coupled to the edge support, the bac support having at least one surface for supporting a back side of the object during planarization. The surface for supporting the back side provides a substantially friction free interface between the surface and the back side of the object to allow the object to move across the surface of the back support. In some embodiments, an edge support (120) is movably coupled to an edge of an object for supporting and positioning the object during planarization.
Abstract:
A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.
Abstract:
CMP systems and methods implement instructions for moving a polishing pad (202) relative to a wafer (206) and a retainer ring (282) and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer (206), a pad conditioning puck (220), and the retainer ring (282) are separately urged into contact with the polishing pad (202) so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor (2106) is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor (2106) by a force controller (2302), and the central processor (2106) manages data transfer to the force controller.
Abstract:
A method and apparatus for conditioning a polishing pad (12) are described. The method includes steps of providing a chemical mechanical polishing apparatus having a polishing region and a conditioning region; cycling a polishing member (12) through the apparatus; contacting the polishing member (12) in the conditioning region with a conditioning member (50); and conditioning the polishing member (12). The apparatus includes an end effector (70) adapted to receive a conditioning member, the end effector (70) being attached to an arm (65) that can be moved horizontally and vertically, and a strain gauge that monitors the force applied to a polishing member (12).
Abstract:
A system for conditioning a pad is provided. The system includes a pad conditioning media (234), a feed-roll (232a) containing a supply of the pad conditioning media, and a take-up roll (232b) for receiving an end of the pad conditioning media. Further included in the system is a pressure application member (236) defined between the feed-roll and the take-up roll. The pressure application member is designed to apply pressure onto the pad conditioning media as the pad conditioning media is applied against the pad to cause a conditioning of a surface of the pad.
Abstract:
According to an example embodiment, the present invention is directed to a CMP polishing apparatus (100) having at least two conditioning arms (110+120) for use in conditioning a polishing pad (150). The CMP polishing apparatus includes a first pad conditioner (130) configured and arranged both to dispense slurry and to condition the pad. A second pad conditioner (140) is configured and arranged both to clean a portion of the polishing pad (150) and to dispense cleaning chemicals. Benefits of using this embodiment include enhanced pad cleaning, better slurry dispense, improved wafer quality, and faster production.
Abstract:
The present invention is an ultrasonic transducer slurry dispensing device (110) and method for efficiently distributing slurry. The present invention utilizes ultrasonic energy to facilitate efficient slurry application in a IC wafer fabrication process to permits reduced manufacturing times and slurry consumption during IC wafer fabrication. In one embodiment a chemical mechanical polishing (CMP) ultrasonic transducer slurry dispenser device (100) includes a slurry dispensing slot (121-123), a slurry chamber (130) coupled and an ultrasonic transducer (111-114). The slurry chamber (130) receives the slurry and transports it to the slurry dispensing slots (121-123) that apply slurry to a polishing pad. The ultrasonic transducer (111-114) transmits ultrasonic energy to the slurry. The transmitted ultrasonic energy permits an ultrasonic transducer slurry dispensing device (100) and method of the present invention to achieve a relatively consistent removal rate and a smoother polished wafer surface by facilitating particle disbursement, polishing pad conditioning and uniform slurry distribution.