FACONNAGE DE VERRE PLAT ET AVIVAGE DES MEULES UTILISEES

    公开(公告)号:WO2020183013A2

    公开(公告)日:2020-09-17

    申请号:PCT/EP2020/056967

    申请日:2020-03-13

    Abstract: L'invention concerne une méthode de façonnage de feuilles de matériau verrier, caractérisée en ce que le façonnage est effectué à l'aide d'une meule munie de plusieurs gorges, le façonnage étant effectué, d'une feuille de matériau verrier à l'autre, en alternant d'une gorge à l'autre de ladite meule. L'invention concerne également une opération d'avivage, permettant d'aviver ladite meule multi-gorges, l'avivage étant effectué simultanément pour plusieurs gorges de ladite meule multi-gorges à l'aide d'un même outil d'avivage, et concerne l'outil d'avivage utilisé, présentant une épaisseur d'au moins 4 mm.

    CMP APPARATUS AND METHODS TO CONTROL THE TILT OF THE CARRIER HEAD, THE RETAINING RING AND THE PAD CONDITIONER
    3.
    发明申请
    CMP APPARATUS AND METHODS TO CONTROL THE TILT OF THE CARRIER HEAD, THE RETAINING RING AND THE PAD CONDITIONER 审中-公开
    CMP装置和控制运输车头,保持环和垫板调节器倾斜的方法

    公开(公告)号:WO0224410A9

    公开(公告)日:2003-03-27

    申请号:PCT/US0129799

    申请日:2001-09-21

    Applicant: LAM RES CORP

    Abstract: A CMP system make repeatable measurements of eccentric forces applied to carriers for wafer or conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such carrier. An initial coaxial relationship between an axis of rotation and a carrier axis (212) is maintained during application of the eccentric force (FP-W), such that a sensor (263) is enabled to make repeatable measurements, of the eccentric forces, and the carrier (208) may be a wafer or a puck carrier. Such initial coaxial relationship is maintained by alinear bearing assembly (232) mounted between the carrier (208) and thsensor (263). The linear bearing assembly is provided as an array of separate linear bearing assemblies, wherein each separate linear bearing assembly is dimensioned independently of the diameter, of a wafer or puck carried by the carrier. The linear bearing assembly may be assembled with a retainer ring (282).

    Abstract translation: CMP系统可以重复测量施加到晶片或调节盘的载体上的偏心力。 即使这样的力偏心地施加到这样的载体,也可以精确地测量施加到载体上的力。 在施加偏心力(FP-W)期间,保持旋转轴线和载体轴线(212)之间的初始同轴关系,使得传感器(263)能够对偏心力进行可重复的测量,以及 载体(208)可以是晶片或圆顶载体。 这种初始同轴关系由安装在载体(208)和传感器(263)之间的Alinear轴承组件(232)保持。 线性轴承组件被提供为单独的直线轴承组件的阵列,其中每个单独的直线轴承组件的尺寸独立于载体承载的晶片或圆盘的直径。 线性轴承组件可以与保持环(282)组装。

    WAFER SUPPORT FOR CHEMICAL MECHANICAL PLANARIZATION
    4.
    发明申请
    WAFER SUPPORT FOR CHEMICAL MECHANICAL PLANARIZATION 审中-公开
    用于化学机械平面化的波浪支持

    公开(公告)号:WO02053320A3

    公开(公告)日:2002-09-12

    申请号:PCT/US0150769

    申请日:2001-10-23

    Applicant: STRASBAUGH

    Inventor: HALLEY DAVID G

    Abstract: The present invention provides an improved planarization apparatus for chemical mechanical planarization. In an exemplary embodiment, the invention provides an apparatus having a back support (118) operatively coupled to the edge support, the bac support having at least one surface for supporting a back side of the object during planarization. The surface for supporting the back side provides a substantially friction free interface between the surface and the back side of the object to allow the object to move across the surface of the back support. In some embodiments, an edge support (120) is movably coupled to an edge of an object for supporting and positioning the object during planarization.

    Abstract translation: 本发明提供一种用于化学机械平面化的改进的平面化装置。 在一个示例性实施例中,本发明提供一种具有可操作地耦合到边缘支撑件的后支撑件(118)的装置,所述支架具有至少一个用于在平坦化期间支撑物体的背面的表面。 用于支撑背面的表面在物体的表面和背面之间提供基本上无摩擦的界面,以允许物体移动穿过背部支撑件的表面。 在一些实施例中,边缘支撑件(120)可移动地联接到物体的边缘,用于在平坦化期间支撑和定位物体。

    SYSTEM AND METHOD FOR POLISHING AND PLANARIZING SEMICONDUCTOR WAFERS USING REDUCED SURFACE AREA POLISHING PADS AND VARIABLE PARTIAL PAD-WAFER OVERLAPPING TECHNIQUES
    5.
    发明申请
    SYSTEM AND METHOD FOR POLISHING AND PLANARIZING SEMICONDUCTOR WAFERS USING REDUCED SURFACE AREA POLISHING PADS AND VARIABLE PARTIAL PAD-WAFER OVERLAPPING TECHNIQUES 审中-公开
    使用减少的表面抛光垫和可变的部分平面倒角覆盖技术抛光和平面化半导体波形的系统和方法

    公开(公告)号:WO02053322A2

    公开(公告)日:2002-07-11

    申请号:PCT/US2001/048658

    申请日:2001-12-13

    CPC classification number: B24B53/017 B24B37/042 B24B37/26 B24B49/04 B24B51/00

    Abstract: A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

    Abstract translation: 用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机,固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。 该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片,然后以分散研磨工艺抛光晶片,直到达到所需的晶片厚度。

    POLISHING APPARATUS AND METHODS CONTROLLING THE POLISHING PRESSURE AS A FUNCTION OF THE OVERLAPPING AREA BETWEEN THE POLISHING HEAD AND THE SEMICONDUCTOR SUBSTRATE
    6.
    发明申请
    POLISHING APPARATUS AND METHODS CONTROLLING THE POLISHING PRESSURE AS A FUNCTION OF THE OVERLAPPING AREA BETWEEN THE POLISHING HEAD AND THE SEMICONDUCTOR SUBSTRATE 审中-公开
    抛光装置和控制抛光压力作为抛光头和半导体基板之间的重叠区域的功能的方法

    公开(公告)号:WO0216078A3

    公开(公告)日:2002-07-04

    申请号:PCT/US0126319

    申请日:2001-08-22

    Applicant: LAM RES CORP

    Abstract: CMP systems and methods implement instructions for moving a polishing pad (202) relative to a wafer (206) and a retainer ring (282) and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer (206), a pad conditioning puck (220), and the retainer ring (282) are separately urged into contact with the polishing pad (202) so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor (2106) is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor (2106) by a force controller (2302), and the central processor (2106) manages data transfer to the force controller.

    Abstract translation: CMP系统和方法实施用于相对于晶片(206)和保持环(282)移动抛光垫(202)并用于施加用于CMP操作的压力的指令。 抛光垫位置的反馈与可变力的期望输入的确定协调,通过该可变力的变化区域分别促使晶片(206),垫调节盘(220)和保持环(282)的改变区域与抛光垫接触 (202),使得每个这样的区域上的压力被单独控制。 处理工作量根据与指令特性相关的标准进行评估。 如果没有超出标准,则使用中央CMP处理器(2106)进行处理。 如果超过了任何标准,则通过力控制器(2302)与中央CMP处理器(2106)分开进行力确定,并且中央处理器(2106)管理向力控制器的数据传送。

    A CONDITIONING MECHANISM IN A CHEMICAL MECHANICAL POLISHING APPARATUS FOR SEMICONDUCTOR WAFERS
    7.
    发明申请
    A CONDITIONING MECHANISM IN A CHEMICAL MECHANICAL POLISHING APPARATUS FOR SEMICONDUCTOR WAFERS 审中-公开
    化学机械抛光装置中半导体波长的调节机理

    公开(公告)号:WO0202277A3

    公开(公告)日:2002-05-16

    申请号:PCT/US0120594

    申请日:2001-06-28

    Applicant: LAM RES CORP

    CPC classification number: B24B53/017 B24B21/04 B24B49/16 B24B53/10

    Abstract: A method and apparatus for conditioning a polishing pad (12) are described. The method includes steps of providing a chemical mechanical polishing apparatus having a polishing region and a conditioning region; cycling a polishing member (12) through the apparatus; contacting the polishing member (12) in the conditioning region with a conditioning member (50); and conditioning the polishing member (12). The apparatus includes an end effector (70) adapted to receive a conditioning member, the end effector (70) being attached to an arm (65) that can be moved horizontally and vertically, and a strain gauge that monitors the force applied to a polishing member (12).

    Abstract translation: 描述了一种用于调节抛光垫(12)的方法和装置。 该方法包括提供具有抛光区域和调节区域的化学机械抛光装置的步骤; 将抛光构件(12)循环通过所述装置; 使调理区域中的抛光构件(12)与调节构件(50)接触; 并调整抛光部件(12)。 该装置包括适于接收调节构件的端部执行器(70),该端部执行器(70)附接到能够水平和垂直移动的臂(65),以及一个监测施加于抛光的力的应变计 会员(12)。

    WEB-STYLE PAD CONDITIONING SYSTEM AND METHODS FOR IMPLEMENTING THE SAME
    8.
    发明申请
    WEB-STYLE PAD CONDITIONING SYSTEM AND METHODS FOR IMPLEMENTING THE SAME 审中-公开
    WEB-STYLE PAD调节系统及其实施方法

    公开(公告)号:WO02028596A1

    公开(公告)日:2002-04-11

    申请号:PCT/US2001/029919

    申请日:2001-09-21

    CPC classification number: B24B53/017 B24B21/04

    Abstract: A system for conditioning a pad is provided. The system includes a pad conditioning media (234), a feed-roll (232a) containing a supply of the pad conditioning media, and a take-up roll (232b) for receiving an end of the pad conditioning media. Further included in the system is a pressure application member (236) defined between the feed-roll and the take-up roll. The pressure application member is designed to apply pressure onto the pad conditioning media as the pad conditioning media is applied against the pad to cause a conditioning of a surface of the pad.

    Abstract translation: 提供了一种用于调节垫的系统。 该系统包括垫调节介质(234),包含垫调节介质的供给辊(232a),以及用于接收垫调节介质的端部的卷取辊(232b)。 进一步包括在系统中的压力施加构件(236)限定在进给辊和卷取辊之间。 压力施加构件被设计成当衬垫调节介质施加到衬垫上以对衬垫的表面进行调节时,将压力施加到衬垫调节介质上。

    DUAL CMP PAD CONDITIONER
    9.
    发明申请
    DUAL CMP PAD CONDITIONER 审中-公开
    双CMP垫调节器

    公开(公告)号:WO0060645A3

    公开(公告)日:2002-01-17

    申请号:PCT/US0008340

    申请日:2000-03-29

    CPC classification number: B24B53/017 B24B53/013 B24B53/02 B24B57/02

    Abstract: According to an example embodiment, the present invention is directed to a CMP polishing apparatus (100) having at least two conditioning arms (110+120) for use in conditioning a polishing pad (150). The CMP polishing apparatus includes a first pad conditioner (130) configured and arranged both to dispense slurry and to condition the pad. A second pad conditioner (140) is configured and arranged both to clean a portion of the polishing pad (150) and to dispense cleaning chemicals. Benefits of using this embodiment include enhanced pad cleaning, better slurry dispense, improved wafer quality, and faster production.

    Abstract translation: 根据示例实施例,本发明涉及一种具有至少两个用于调节抛光垫(150)的调节臂(110 + 120)的CMP抛光设备(100)。 CMP抛光装置包括配置和布置成分配浆料并调节垫的第一垫调节器(130)。 第二垫调节器(140)被构造和布置成两者以清洁抛光垫(150)的一部分并分配清洁化学品。 使用该实施例的优点包括增强的垫清洗,更好的浆液分配,改进的晶片质量和更快的生产。

    ULTRASONIC TRANSDUCER SLURRY DISPENSER
    10.
    发明申请
    ULTRASONIC TRANSDUCER SLURRY DISPENSER 审中-公开
    超声波换能器浆料分配器

    公开(公告)号:WO0117724A3

    公开(公告)日:2001-09-27

    申请号:PCT/US0023861

    申请日:2000-08-30

    CPC classification number: B24B53/017 B24B1/04 B24B41/061 B24B57/02

    Abstract: The present invention is an ultrasonic transducer slurry dispensing device (110) and method for efficiently distributing slurry. The present invention utilizes ultrasonic energy to facilitate efficient slurry application in a IC wafer fabrication process to permits reduced manufacturing times and slurry consumption during IC wafer fabrication. In one embodiment a chemical mechanical polishing (CMP) ultrasonic transducer slurry dispenser device (100) includes a slurry dispensing slot (121-123), a slurry chamber (130) coupled and an ultrasonic transducer (111-114). The slurry chamber (130) receives the slurry and transports it to the slurry dispensing slots (121-123) that apply slurry to a polishing pad. The ultrasonic transducer (111-114) transmits ultrasonic energy to the slurry. The transmitted ultrasonic energy permits an ultrasonic transducer slurry dispensing device (100) and method of the present invention to achieve a relatively consistent removal rate and a smoother polished wafer surface by facilitating particle disbursement, polishing pad conditioning and uniform slurry distribution.

    Abstract translation: 本发明是一种超声波换能器浆液分配装置(110)和用于有效分配浆液的方法。 本发明利用超声能量促进IC晶片制造过程中的有效浆料施加,以允许在IC晶片制造期间减少制造时间和浆料消耗。 在一个实施例中,化学机械抛光(CMP)超声换能器浆液分配器装置(100)包括浆液分配槽(121-123),耦合的浆液室(130)和超声换能器(111-114)。 浆液室(130)接收浆液并将浆液输送到将浆液施加到抛光垫上的浆液分配槽(121-123)。 超声波换能器(111-114)将超声波能量传输到浆液。 透射的超声波能量允许本发明的超声换能器浆料分配装置(100)和方法通过促进颗粒分配,抛光垫调节和均匀的浆料分布而实现相对一致的移除速率和更光滑的抛光晶片表面。

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