METHOD FOR METAL LAYER FORMATION
    1.
    发明申请

    公开(公告)号:WO2018140430A1

    公开(公告)日:2018-08-02

    申请号:PCT/US2018/014945

    申请日:2018-01-24

    Abstract: A method for forming a crystalline metal layer on a three-dimensional (3D) substrate is provided. The method includes applying crystal growth ink to a surface of the 3D substrate, wherein the crystal growth ink includes a metal ionic precursor and a structuring liquid; and exposing the 3D substrate to plasma irradiation from plasma in a vacuum chamber to cause the growing of a crystalline metal layer on the 3D substrate, wherein the exposure is based on a set of predefined exposure parameters.

    METAL ACTIVE COMPONENT FORMATION IN HYBRID MATERIALS
    3.
    发明申请
    METAL ACTIVE COMPONENT FORMATION IN HYBRID MATERIALS 审中-公开
    金属活性组分在混合材料中的形成

    公开(公告)号:WO2018049322A1

    公开(公告)日:2018-03-15

    申请号:PCT/US2017/050951

    申请日:2017-09-11

    Abstract: A method for forming a metal active component in a hybrid material is provided. The method includes applying a metal precursor formulation on a substrate; and exposing the metal precursor formulation applied on the substrate to a low-energy plasma, wherein the low-energy plasma is operated according to a set of exposure parameters.

    Abstract translation: 提供了一种用于在混合材料中形成金属活性组分的方法。 该方法包括将金属前体制剂施用于基材上; 和将施加在衬底上的金属前体制剂暴露于低能等离子体,其中低能等离子体根据一组曝光参数进行操作。

Patent Agency Ranking