Abstract:
A miniaturized plasma source includes a stripline split-ring resonator. The split-ring resonator is sandwiched between two dielectric substrates and two metal ground planes. In order to make the plasma accessible from the outside of the ground planes, a hole is made through the gap between the ends of the split ring. The two ground planes act as an electromagnetic shield, protecting the split-ring resonator from electromagnetic interference due to changes in the electric or dielectric environment surrounding it. The miniaturized plasma source is particularly useful in optogalvanic spectroscopy applications.
Abstract:
Sterilisation apparatus arranged controllably to generate and emit hydroxyl radicals. The apparatus includes an applicator which receives RF or microwave energy, gas and water mist in a hydroxyl radical generating region. The impedance at the hydroxyl radical generating region is controlled to be high to promote creation of an ionisation discharge which in turn generates hydroxyl radicals when water mist is present. The applicator may be a coaxial assembly or waveguide. A dynamic tuning mechanism e.g. integrated in the applicator may control the impedance at the hydroxyl radical generating region. The mist and/or gas and/or energy delivery means may be integrated with each other.
Abstract:
A composition for forming a patterned thin metal film on a substrate is presented. The composition includes metal cations; and at least one solvent, wherein the patterned thin metal film is adhered to a surface of the substrate upon exposure of the at least metal cations to a low-energy plasma.
Abstract:
Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.
Abstract:
L'invention concerne un dispositif de traitement de milieu gazeux par plasma qui comprend une chambre de traitement (2) comportant une enveloppe (6) de surface interne tronconique (8) qui converge depuis l'extrémité amont (9) vers l'extrémité aval (10) de la chambre de traitement (2), dans laquelle une tige centrale tronconique (11) s'étend longitudinalement, dans laquelle au moins quatre cloisons radiales (15) qui forment au moins quatre cavités de résonance (16) sont en contact électrique (17) avec la surface interne (8) de la première chambre (2) et supportent un cylindre perforé (19) disposé coaxialement dans la première chambre (2) autour de la tige centrale (11) et dans laquelle une première phase électrique (59) délivre une haute tension alternative qui alimente l'enveloppe (6) de la première chambre de traitement (2). L'invention concerne également un procédé utilisant un tel dispositif et les applications de ce dispositif notamment au traitement des gaz d'échappement d'un véhicule automobile.
Abstract:
A composition for forming a patterned thin metal film on a substrate is presented. The composition includes metal cations; and at least one solvent, wherein the patterned thin metal film is adhered to a surface of the substrate upon exposure of the at least metal cations to a low-energy plasma.
Abstract:
This disclosure describes systems, methods, and apparatus for pulsed RF power delivery to a plasma load for plasma processing of a substrate. In order to maximize power delivery, a calibration phase using a dummy substrate or no substrate in the chamber, is used to ascertain a preferred fixed initial RF frequency for each pulse. This fixed initial RF frequency is then used at the start of each pulse during a processing phase, where a real substrate is used and processed in the chamber.
Abstract:
The invention relates to a device for plasma processing a gaseous medium comprising a processing chamber (2) provided with an envelop (6) having a tapered internal surface (8) which tapers down away from the top end (9) towards the lower end (10) of the processing chamber (2) in which a tapered central rod (11) longitudinally extends and at least four radial partitions (15) forming at least four resonance cavities which have an electric contact (17) with the internal surface (8) of the first chamber (2) and support a perforated cylinder (19) coaxially disposed in the first chamber (2) around the central rod (11) and in which a first electrical phase (59) supplies a high tension alternate current for feeding the envelop (6) of the first processing chamber (2). A method for using said device and the use thereof, in particular for processing exhaust gases of a motor vehicle are also disclosed.