公开(公告)号：WO2011072042A2

公开(公告)日：2011-06-16

申请号：PCT/US2010059517

申请日：2010-12-08

Applicant: NOVELLUS SYSTEMS INC ,  CHEUNG DAVID ,  LI TED ,  GUHA ANIRBAN ,  OSTROWSKI KIRK

Inventor： CHEUNG DAVID ,  LI TED ,  GUHA ANIRBAN ,  OSTROWSKI KIRK

IPC: H01L21/302

CPC classification number: H01L21/31058 ,  G03F7/427 ,  H01L21/67207

Abstract: Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160 oCor less, e.g., less than about 90 oC.

Abstract translation: 提供了用于剥离光致抗蚀剂并从介电材料去除蚀刻相关残留物的改进方法。 在本发明的一个方面中，方法涉及使用采用弱氧化剂和含氟化合物的基于氢的蚀刻工艺从介电层去除材料。 基材温度保持在约160℃或更低的水平，例如低于约90℃。

公开(公告)号：WO2011071980A2

公开(公告)日：2011-06-16

申请号：PCT/US2010/059388

申请日：2010-12-08

Applicant: NOVELLUS SYSTEMS, INC. ,  CHEUNG, David ,  FANG, Haoquan ,  KUO, Jack ,  KALINOVSKI, Ilia ,  LI, Ted ,  YAO, Andrew ,  GUHA, Anirban ,  OSTROWSKI, Kirk

Inventor： CHEUNG, David ,  FANG, Haoquan ,  KUO, Jack ,  KALINOVSKI, Ilia ,  LI, Ted ,  YAO, Andrew ,  GUHA, Anirban ,  OSTROWSKI, Kirk

IPC: H01L21/3065

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

Abstract: Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.

Abstract translation: 提供了用于剥离光致抗蚀剂和从工件表面去除离子注入相关残留物的改进方法。 根据各种实施例，使用元素氢，含氟气体和保护气体产生等离子体。 等离子体活化气体与高剂量植入物抗蚀剂反应，去除了外壳和体抗蚀剂层，同时保护了工件表面的暴露部分。 工件表面基本上无残留物，硅损耗低。

公开(公告)号：WO2011071980A3

公开(公告)日：2011-09-01

申请号：PCT/US2010059388

申请日：2010-12-08

Applicant: NOVELLUS SYSTEMS INC ,  CHEUNG DAVID ,  FANG HAOQUAN ,  KUO JACK ,  KALINOVSKI ILIA ,  LI TED ,  YAO ANDREW ,  GUHA ANIRBAN ,  OSTROWSKI KIRK

Inventor： CHEUNG DAVID ,  FANG HAOQUAN ,  KUO JACK ,  KALINOVSKI ILIA ,  LI TED ,  YAO ANDREW ,  GUHA ANIRBAN ,  OSTROWSKI KIRK

IPC: H01L21/3065

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

Abstract: Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.

Abstract translation: 提供了剥离光刻胶并从工件表面除去离子注入相关残留物的改进方法。 根据各种实施例，使用元素氢，含氟气体和保护气体产生等离子体。 等离子体激活的气体与高剂量注入抗蚀剂反应，除去外壳和体阻挡层两者，同时保护工件表面的暴露部分。 工件表面基本无残留，硅损失低。

公开(公告)号：WO2011072042A3

公开(公告)日：2011-06-16

申请号：PCT/US2010/059517

申请日：2010-12-08

Applicant: NOVELLUS SYSTEMS, INC. ,  CHEUNG, David ,  LI, Ted ,  GUHA, Anirban ,  OSTROWSKI, Kirk

Inventor： CHEUNG, David ,  LI, Ted ,  GUHA, Anirban ,  OSTROWSKI, Kirk

IPC: H01L21/302

Abstract: Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160 o Cor less, e.g., less than about 90 o C.