公开(公告)号：WO2019005160A1

公开(公告)日：2019-01-03

申请号：PCT/US2017/040500

申请日：2017-06-30

Applicant: INTEL CORPORATION ,  OUELLETTE, Daniel G. ,  WU, Stephen Y. ,  BROCKMAN, Justin S. ,  WIEGAND, Christopher J. ,  GOLONZKA, Oleg ,  RAHMAN, Tofizur ,  SMITH, Angeline K. ,  DOYLE, Brian S. ,  ALZATE VINASCO, Juan G. ,  O'BRIEN, Kevin P. ,  OGUZ, Kaan ,  DOCZY, Mark L.

Inventor： OUELLETTE, Daniel G. ,  WU, Stephen Y. ,  BROCKMAN, Justin S. ,  WIEGAND, Christopher J. ,  GOLONZKA, Oleg ,  RAHMAN, Tofizur ,  SMITH, Angeline K. ,  DOYLE, Brian S. ,  ALZATE VINASCO, Juan G. ,  O'BRIEN, Kevin P. ,  OGUZ, Kaan ,  DOCZY, Mark L.

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: A memory device includes a bottom electrode comprising a non-stoichiometric tantalum nitride layer. A synthetic antiferromagnetic layer is disposed above the bottom electrode. A fixed magnet is disposed above the synthetic antiferromagnetic layer. A tunnel barrier is disposed above the fixed magnet. A free magnet is above the tunnel barrier and a top electrode is disposed above the free magnet.

公开(公告)号：WO2018004698A1

公开(公告)日：2018-01-04

申请号：PCT/US2016/040875

申请日：2016-07-01

Applicant: INTEL CORPORATION ,  RAHMAN, MD Tofizur ,  WIEGAND, Christopher J. ,  MAERTZ, Brian ,  OUELLETTE, Daniel G. ,  O'BRIEN, Kevin P. ,  OGUZ, Kaan ,  DOYLE, Brian S. ,  DOCZY, Mark L. ,  BERGSTROM, Daniel B. ,  BROCKMAN, Justin S. ,  GOLONZKA, Oleg ,  GHANI, Tahir

Inventor： RAHMAN, MD Tofizur ,  WIEGAND, Christopher J. ,  MAERTZ, Brian ,  OUELLETTE, Daniel G. ,  O'BRIEN, Kevin P. ,  OGUZ, Kaan ,  DOYLE, Brian S. ,  DOCZY, Mark L. ,  BERGSTROM, Daniel B. ,  BROCKMAN, Justin S. ,  GOLONZKA, Oleg ,  GHANI, Tahir

IPC: H01L43/02 ,  H01L43/10 ,  G11C11/16

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.

Abstract translation: 材料层堆叠结构提供具有改善的垂直磁各向异性（PMA）特性的磁性隧道结（MTJ）。 在一个实施例中，材料层堆叠的自由磁层设置在隧道势垒层和氧化镁（Mg）的盖层之间。 自由磁层包括基本上由钴原子，铁原子和硼原子的组合构成的钴 - 铁 - 硼（CoFeB）体。 在与自由磁性层与隧道势垒层的界面邻接的第一区域中，CoFeB主体的第一硼质量分数等于或大于25％（例如，等于或大于27％）。 在另一个实施例中，第一硼质量分数大于CoFeB主体的第二区域中的第二硼质量分数，所述第二区域邻接自由磁层与帽层的界面。

公开(公告)号：WO2019182589A1

公开(公告)日：2019-09-26

申请号：PCT/US2018/023632

申请日：2018-03-21

Applicant: INTEL CORPORATION ,  RAHMAN, Tofizur ,  WIEGAND, Christopher J. ,  BROCKMAN, Christopher ,  OUELLETTE, Daniel G. ,  ALZATE VINASCO, Juan G. ,  SMITH, Angeline K. ,  GOLONZKA, Oleg

Inventor： RAHMAN, Tofizur ,  WIEGAND, Christopher J. ,  BROCKMAN, Christopher ,  OUELLETTE, Daniel G. ,  ALZATE VINASCO, Juan G. ,  SMITH, Angeline K. ,  GOLONZKA, Oleg

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A memory device comprises a perpendicular magnetic tunnel junction (PMTJ) stack disposed above a substrate. The PMTJ stack has a first free layer magnet, a reference fixed magnet, and a barrier material between the first free layer magnet and the reference fixed magnet. A material stack is on the PMTJ device, where the material stack comprises a first cap material, a second free layer magnet, and a perpendicular magnetic anisotropy (PMA) booster material to increase PMA of the PMTJ stack.

公开(公告)号：WO2018182651A1

公开(公告)日：2018-10-04

申请号：PCT/US2017/025194

申请日：2017-03-30

Applicant: INTEL CORPORATION ,  RAHMAN, Tofizur ,  DOCZY, Mark L. ,  SURI, Satyarth ,  OGUZ, Kaan ,  KUO, Charles C. ,  DOYLE, Brian S. ,  O'BRIEN, Kevin P. ,  WIEGAND, Christopher J. ,  OUELLETTE, Daniel G. ,  SMITH, Angeline K.

Inventor： RAHMAN, Tofizur ,  DOCZY, Mark L. ,  SURI, Satyarth ,  OGUZ, Kaan ,  KUO, Charles C. ,  DOYLE, Brian S. ,  O'BRIEN, Kevin P. ,  WIEGAND, Christopher J. ,  OUELLETTE, Daniel G. ,  SMITH, Angeline K.

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic tunnel junction (PSTTM) device includes a bottom electrode, a fixed magnet above the bottom electrode, a tunnel barrier disposed above the fixed magnet, a free magnet disposed on the tunnel barrier, an oxide layer disposed above the free magnet and a top electrode disposed above the oxide layer. In an embodiment, the oxide layer includes a stack of metal oxides, wherein the stack of metal oxides comprises a first metal oxide and a second metal oxide disposed on the first metal oxide, and wherein the first metal oxide comprises a metal different from a metal of the second metal oxide.

公开(公告)号：WO2019005157A1

公开(公告)日：2019-01-03

申请号：PCT/US2017/040496

申请日：2017-06-30

Applicant: INTEL CORPORATION ,  WIEGAND, Christopher J. ,  RAHMAN, Tofizur ,  OUELLETTE, Daniel G. ,  SMITH, Angeline K. ,  BROCKMAN, Justin S. ,  O'BRIEN, Kevin P. ,  OGUZ, Kaan ,  DOCZY, Mark L. ,  DOYLE, Brian S. ,  GOLONZKA, Oleg ,  ALZATE VINASCO, Juan G.

Inventor： WIEGAND, Christopher J. ,  RAHMAN, Tofizur ,  OUELLETTE, Daniel G. ,  SMITH, Angeline K. ,  BROCKMAN, Justin S. ,  O'BRIEN, Kevin P. ,  OGUZ, Kaan ,  DOCZY, Mark L. ,  DOYLE, Brian S. ,  GOLONZKA, Oleg ,  ALZATE VINASCO, Juan G.

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: A memory device includes a bottom electrode disposed above a substrate, a fixed magnet disposed above the bottom electrode, a tunnel barrier including a magnesium oxide disposed on the fixed magnet, a free magnet on the tunnel barrier, a cap oxide layer disposed on the free magnet, a follower magnet disposed on the oxide layer and a metallic cap disposed on the follower magnet. The metallic cap includes a metal such as Hf, W and Ta and further includes a trace amounts of an inert gas. One or more conductive nano-channels extend from the metallic cap through the free magnet and into the oxide layer, where each of the one or more conductive nano-channels include the material of the metallic cap. The memory device further includes an etch stop layer disposed on the metallic cap and a top electrode disposed on the etch stop layer.

公开(公告)号：WO2019005164A1

公开(公告)日：2019-01-03

申请号：PCT/US2017/040507

申请日：2017-06-30

Applicant: INTEL CORPORATION ,  OGUZ, Kaan ,  O'BRIEN, Kevin P. ,  KUO, Charles C. ,  DOYLE, Brian S. ,  DOCZY, Mark L. ,  WIEGAND, Christopher J. ,  RAHMAN, Tofizur ,  OUELLETTE, Daniel G. ,  BROCKMAN, Justin S. ,  GHANI, Tahir ,  GOLONZKA, Oleg

Inventor： OGUZ, Kaan ,  O'BRIEN, Kevin P. ,  KUO, Charles C. ,  DOYLE, Brian S. ,  DOCZY, Mark L. ,  WIEGAND, Christopher J. ,  RAHMAN, Tofizur ,  OUELLETTE, Daniel G. ,  BROCKMAN, Justin S. ,  GHANI, Tahir ,  GOLONZKA, Oleg

IPC: H01L43/10 ,  H01L43/12

Abstract: A memory device includes a bottom electrode, a fixed magnet above the bottom electrode, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier. One of the free magnet or the fixed magnet includes a magnetic alloy consisting of iron and boron, and one or more elements selected from the group consisting of Si, Ge, Al, Hf, W, Ru, Ir, Ta, Cr and Mo where the total amount of the one or more elements is less than or equal to 10 atomic percent of the total composition of the magnetic alloy. A memory device further includes an oxide layer on the free magnet, a follower magnetic layer on the oxide layer and a top electrode above the follower magnetic layer.