公开(公告)号：WO2016195672A1

公开(公告)日：2016-12-08

申请号：PCT/US2015/033930

申请日：2015-06-03

Applicant: INTEL CORPORATION ,  JEZEWSKI, Christopher, J. ,  MUKHERJEE, Srijit ,  BERGSTROM, Daniel, B. ,  INDUKURI, Tejaswi, K. ,  GRIGGIO, Flavio ,  CHEBIAM, Ramanan, V. ,  CLARKE, James, S.

Inventor： JEZEWSKI, Christopher, J. ,  MUKHERJEE, Srijit ,  BERGSTROM, Daniel, B. ,  INDUKURI, Tejaswi, K. ,  GRIGGIO, Flavio ,  CHEBIAM, Ramanan, V. ,  CLARKE, James, S.

IPC: H01L21/3205

CPC classification number: H01L21/76846 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53252 ,  H01L23/53266

Abstract: In one embodiment, a conductive connector for a microelectronic component may be formed with a noble metal layer, acting as an adhesion/wetting layer, disposed between a barrier liner and a conductive fill material. In a further embodiment, the conductive connector may have a noble metal conductive fill material disposed directly on the barrier liner. The use of a noble metal as an adhesion/wetting layer or as a conductive fill material may improve gapfill and adhesion, which may result in the conductive connector being substantially free of voids, thereby improving the electrical performance of the conductive connector relative to conductive connectors without a noble metal as the adhesion/wetting layer or the conductive fill material.

Abstract translation: 在一个实施例中，用于微电子部件的导电连接器可以形成有设置在阻挡衬里和导电填充材料之间的用作粘附/润湿层的贵金属层。 在另一实施例中，导电连接器可以具有直接设置在阻挡衬里上的贵金属导电填充材料。 使用贵金属作为粘合/润湿层或作为导电填充材料可以改善间隙填充和粘附，这可能导致导电连接器基本上没有空隙，从而改善导电连接器相对于导电连接器的电性能 没有贵金属作为粘附/润湿层或导电填料。

公开(公告)号：WO2013048449A1

公开(公告)日：2013-04-04

申请号：PCT/US2011/054294

申请日：2011-09-30

Applicant: INTEL CORPORATION ,  PRADHAN, Sameer S. ,  BERGSTROM, Daniel, B. ,  CHUN, Jin-Sung ,  CHIU, Julia

Inventor： PRADHAN, Sameer S. ,  BERGSTROM, Daniel, B. ,  CHUN, Jin-Sung ,  CHIU, Julia

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L21/823828 ,  H01L21/76897 ,  H01L21/823857 ,  H01L29/41791 ,  H01L29/495 ,  H01L29/51 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L2029/7858

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.

Abstract translation: 本说明书涉及制造具有非平面晶体管的微电子器件的领域。 本说明书的实施例涉及在非平面NMOS晶体管内形成栅极，其中诸如铝，钛和碳的组成的NMOS功函数材料可以与含钛栅极填充物结合使用 以便于在形成非平面NMOS晶体管栅极的栅电极时使用含钨导电材料。

公开(公告)号：WO2010044944A1

公开(公告)日：2010-04-22

申请号：PCT/US2009/051692

申请日：2009-07-24

Applicant: ALCOA INC. ,  KILEY, Matthew, P. ,  NOVAK, Miloslav ,  PEER, Gregory, L. ,  TIMKO, Edward, A. ,  BERGSTROM, Daniel, B. ,  SHOUP, Jeffrey, M. ,  SERRANO, Deryck, H.

Inventor： KILEY, Matthew, P. ,  NOVAK, Miloslav ,  PEER, Gregory, L. ,  TIMKO, Edward, A. ,  BERGSTROM, Daniel, B. ,  SHOUP, Jeffrey, M. ,  SERRANO, Deryck, H.

IPC: F41H7/00 ,  F41H7/02

CPC classification number: F41H7/02 ,  B62D63/025 ,  F41H7/044 ,  F41H7/048 ,  Y10T29/49826

Abstract: A combat tactical modular vehicle structure 10 including a center frame module 11 comprising a front bulkhead 16, a cab portion 14, and a rear bulkhead 17 where the center frame module 11 includes an integrated armor so that the integrated armor is a part of center frame module 11 or the center frame module 11 has at least one piece of armor attached to the center frame module 11, a front frame module 12 comprising an engine subframe where the front frame module 12 is connected to the front bulkhead 16 by a plurality of mechanical coupling devices, and a rear frame module 13 comprising a gearbox subframe where the rear frame module 13 is connected to the rear bulkhead 17 by the plurality of mechanical coupling devices for selectively connecting and disconnecting the front frame module 12 to the front bulkhead 16 without substantially affecting the connection and the rear frame module 13 to the rear bulkhead 17 without substantially affecting the connection.

Abstract translation: 一种战斗模块化车辆结构10，包括中央框架模块11，其包括前隔板16，驾驶室部分14和后隔板17，其中中央框架模块11包括集成的装甲，使得集成的装甲是中心框架的一部分 模块11或中央框架模块11具有附接到中心框架模块11的至少一个装甲，前框架模块12，其包括发动机子框架，其中前框架模块12通过多个机械连接到前隔板16 耦合装置和后框架模块13，其包括齿轮箱子框架，其中后框架模块13通过多个机械联接装置连接到后隔板17，用于选择性地将前框架模块12连接到前隔板16并将其与前隔板16断开 将连接和后框架模块13影响到后隔板17，而基本上不影响连接。

公开(公告)号：WO2018004698A1

公开(公告)日：2018-01-04

申请号：PCT/US2016/040875

申请日：2016-07-01

Applicant: INTEL CORPORATION ,  RAHMAN, MD Tofizur ,  WIEGAND, Christopher J. ,  MAERTZ, Brian ,  OUELLETTE, Daniel G. ,  O'BRIEN, Kevin P. ,  OGUZ, Kaan ,  DOYLE, Brian S. ,  DOCZY, Mark L. ,  BERGSTROM, Daniel B. ,  BROCKMAN, Justin S. ,  GOLONZKA, Oleg ,  GHANI, Tahir

Inventor： RAHMAN, MD Tofizur ,  WIEGAND, Christopher J. ,  MAERTZ, Brian ,  OUELLETTE, Daniel G. ,  O'BRIEN, Kevin P. ,  OGUZ, Kaan ,  DOYLE, Brian S. ,  DOCZY, Mark L. ,  BERGSTROM, Daniel B. ,  BROCKMAN, Justin S. ,  GOLONZKA, Oleg ,  GHANI, Tahir

IPC: H01L43/02 ,  H01L43/10 ,  G11C11/16

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.

Abstract translation: 材料层堆叠结构提供具有改善的垂直磁各向异性（PMA）特性的磁性隧道结（MTJ）。 在一个实施例中，材料层堆叠的自由磁层设置在隧道势垒层和氧化镁（Mg）的盖层之间。 自由磁层包括基本上由钴原子，铁原子和硼原子的组合构成的钴 - 铁 - 硼（CoFeB）体。 在与自由磁性层与隧道势垒层的界面邻接的第一区域中，CoFeB主体的第一硼质量分数等于或大于25％（例如，等于或大于27％）。 在另一个实施例中，第一硼质量分数大于CoFeB主体的第二区域中的第二硼质量分数，所述第二区域邻接自由磁层与帽层的界面。

公开(公告)号：WO2017099702A1

公开(公告)日：2017-06-15

申请号：PCT/US2015/064182

申请日：2015-12-07

Applicant: INTEL CORPORATION ,  RAHMAN, Tofizur ,  WIEGAND, Christopher J. ,  BERGSTROM, Daniel B.

Inventor： RAHMAN, Tofizur ,  WIEGAND, Christopher J. ,  BERGSTROM, Daniel B.

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/08

Abstract: Embodiments of the disclosure are directed to a magnetic tunneling junction (MTJ) that includes a diffusion barrier. The diffusion barrier can be disposed between two ferromagnetic layers of the MTJ. More specifically, the diffusion barrier can be disposed between a first ferromagnetic layer, which is adjacent to a natural antiferromagnetic layer, and a second ferromagnetic layer; the first and second ferromagnetic layers and the diffusion barrier being part of a synthetic antiferromagnet. The diffusion barrier can be made of a refractory metal, such as tantalum. The diffusion barrier acts as a barrier for manganese diffusion from the natural antiferromagnetic layer into the synthetic antiferromagnet and other higher layers of the MTJ.

Abstract translation: 本公开的实施例针对包括扩散阻挡层的磁性隧道结（MTJ）。 扩散阻挡层可以设置在MTJ的两个铁磁层之间。 更具体地说，扩散阻挡层可以设置在与天然反铁磁层相邻的第一铁磁层和第二铁磁层之间; 第一和第二铁磁层以及扩散阻挡层是合成反铁磁体的一部分。 扩散阻挡层可以由难熔金属例如钽制成。 扩散阻挡层起到阻止锰从天然反铁磁层扩散到合成反铁磁体和MTJ的其他更高层的作用。

公开(公告)号：WO2015099734A1

公开(公告)日：2015-07-02

申请号：PCT/US2013/077813

申请日：2013-12-26

Applicant: INTEL CORPORATION ,  FARMER, Jason A. ,  LEIB, Jeffrey, S. ,  BERGSTROM, Daniel, B.

Inventor： FARMER, Jason A. ,  LEIB, Jeffrey, S. ,  BERGSTROM, Daniel, B.

IPC: H01L21/205

CPC classification number: H01L21/76856 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76867 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/517

Abstract: An aspect of the present disclosure relates to a method of forming a barrier layer on a semiconductor device. The method includes placing a substrate into a reaction chamber and depositing a barrier layer over the substrate. The barrier layer includes a metal and a non-metal and the barrier layer exhibits an as-deposited thickness of 4 nm or less. The method further includes densifying the barrier layer by forming plasma from a gas proximate to said barrier layer and reducing the thickness and increasing the density of the barrier layer. In embodiments, during densification 300 Watts or less of power is applied to the plasma at a frequency of 350 kHz to 40 MHz.

Abstract translation: 本公开的一个方面涉及在半导体器件上形成阻挡层的方法。 该方法包括将衬底放置在反应室中并在衬底上沉积阻挡层。 阻挡层包括金属和非金属，并且阻挡层表现出4nm或更小的沉积厚度。 该方法还包括通过从靠近所述阻挡层的气体形成等离子体并减小厚度并增加阻挡层的密度来致密化阻挡层。 在实施例中，在致密化期间，以等于350kHz至40MHz的频率向等离子体施加300瓦或更小的功率。

公开(公告)号：WO2015099789A1

公开(公告)日：2015-07-02

申请号：PCT/US2013/078118

申请日：2013-12-27

Applicant: INTEL CORPORATION ,  FARMER, Jason, A. ,  TRICHY, Gopinath ,  SANDFORD, Justin ,  BERGSTROM, Daniel, B.

Inventor： FARMER, Jason, A. ,  TRICHY, Gopinath ,  SANDFORD, Justin ,  BERGSTROM, Daniel, B.

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66795 ,  H01L29/7851

Abstract: Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. By controlling the flow rate of various components of the plasma gas flow, plasmas exhibiting desired etching characteristics may be obtained. Such plasmas may be used in single or multistep etching operations, such as recess etching operations that may be used in the production of non-planar microelectronic devices.

Abstract translation: 描述了在工件上选择性地蚀刻氧化物和氮化物材料的技术。 这种技术包括用通过点燃等离子体气体流产生的远程等离子体蚀刻工件的方法。 通过控制等离子体气体流的各种成分的流量，可以获得显示期望的蚀刻特性的等离子体。 这种等离子体可以用于单次或多步蚀刻操作，例如可用于生产非平面微电子器件的凹陷蚀刻操作。

公开(公告)号：WO2015094309A1

公开(公告)日：2015-06-25

申请号：PCT/US2013/076694

申请日：2013-12-19

Applicant: INTEL CORPORATION ,  LEIB, Jeffrey S. ,  TROEGER, Ralph T. ,  BERGSTROM, Daniel B.

Inventor： LEIB, Jeffrey S. ,  TROEGER, Ralph T. ,  BERGSTROM, Daniel B.

IPC: H01L21/28

CPC classification number: H01L21/76895 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/76865 ,  H01L21/76883 ,  H01L23/528 ,  H01L23/53266 ,  H01L23/535 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785 ,  H01L2029/7858

Abstract: Techniques and methods related to forming a wrap-around contact on a semiconductor device, and apparatus, system, and mobile platform incorporating such semiconductor devices.

Abstract translation: 涉及在半导体器件上形成环绕接触的技术和方法，以及包括这种半导体器件的装置，系统和移动平台。