公开(公告)号：WO2012166264A3

公开(公告)日：2013-01-24

申请号：PCT/US2012034915

申请日：2012-04-25

Applicant: APPLIED MATERIALS INC ,  SINGH SARAVJEET ,  SCOTT GRAEME JAMIESON ,  KUMAR AJAY

Inventor： SINGH SARAVJEET ,  SCOTT GRAEME JAMIESON ,  KUMAR AJAY

IPC: H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/334

Abstract: Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.

Abstract translation: 本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。 离子蚀刻室具有包围处理区域的室主体，设置在处理区域中并具有基板接收表面的基板支撑件，设置在与主体接收表面相对的室主体的壁处的等离子体源，离子基屏蔽 设置在等离子体源和基板接收表面之间，以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。 可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。 离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。 孔径尺寸，形状和/或中心轴位置可以使用插入来改变。

公开(公告)号：WO2012054238A2

公开(公告)日：2012-04-26

申请号：PCT/US2011/055100

申请日：2011-10-06

Applicant: APPLIED MATERIALS, INC. ,  OUYE, Alan, H. ,  SCOTT, Graeme ,  YU, Keven, Kaisheng ,  GRIMBERGEN, Michael, N.

Inventor： OUYE, Alan, H. ,  SCOTT, Graeme ,  YU, Keven, Kaisheng ,  GRIMBERGEN, Michael, N.

IPC: H01L21/3065 ,  H01L21/205 ,  H01L21/02

CPC classification number: H05B3/42 ,  H01J37/32522 ,  H05B2203/003

Abstract: Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base.

Abstract translation: 本发明的实施例通常提供用于等离子体处理室的盖式加热器。 在一个实施例中，提供了包括导热基座的盖子加热器组件。 导热基底具有限定内部开口的平面环形状。 盖式加热器组件还包括设置在导热基座上的加热元件和设置在导热基座的内开口上的绝缘中心芯。

公开(公告)号：WO2003053627A1

公开(公告)日：2003-07-03

申请号：PCT/US2002/019752

申请日：2002-06-21

Applicant: HEWLETT-PACKARD COMPANY ,  CAHILL, David ,  POLLARD, Jeffrey, R. ,  O'REILLY, Declan, John ,  SCOTT, Graeme ,  MCLOUGHLIN, Noel

Inventor： CAHILL, David ,  POLLARD, Jeffrey, R. ,  O'REILLY, Declan, John ,  SCOTT, Graeme ,  MCLOUGHLIN, Noel

IPC: B23K26/38

CPC classification number: B23K26/067 ,  B23K26/0676 ,  B23K26/16 ,  B23K26/384 ,  B23K26/389 ,  B41J2/1603 ,  B41J2/1607 ,  B41J2/1634

Abstract: A method of laser machining a fluid slot (126) includes directing a UV laser beam towards a substrate with microelectronics to form a slot through the substrate.

Abstract translation: 激光加工流体槽（126）的方法包括将UV激光束引导到具有微电子学的衬底以形成通过衬底的槽。

公开(公告)号：WO2013043148A1

公开(公告)日：2013-03-28

申请号：PCT/US2011/052108

申请日：2011-09-19

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  SCOTT, Graeme ,  COULL, Richard ,  SCARDACI, Vittorio

Inventor： SCOTT, Graeme ,  COULL, Richard ,  SCARDACI, Vittorio

IPC: G01N27/12 ,  G01N33/18 ,  G01N27/02

CPC classification number: G01N27/127 ,  B05D3/0254 ,  G01N25/02 ,  G01N27/121

Abstract: A water vapour sensor comprises a substrate and a film of carbon nanotubes impregnated with surfactant on the substrate. The substrate is of material which is inert relative to the film. Two or more electrical conductors are in contact with in spaced apart zones of the film, whereby the impedance of the film may be measured. The sensor is housed in housing which protects the sensor but also allows exposure of the film to water vapour.

Abstract translation: 水蒸汽传感器包括基材和在基材上浸渍有表面活性剂的碳纳米管膜。 基材是相对于膜是惰性的材料。 两个或更多个电导体与膜的间隔开的区域接触，从而可以测量膜的阻抗。 传感器容纳在保护传感器的壳体中，但也允许膜暴露于水蒸汽。

公开(公告)号：WO2012166265A3

公开(公告)日：2012-12-06

申请号：PCT/US2012/034922

申请日：2012-04-25

Applicant: APPLIED MATERIALS, INC. ,  SINGH, Saravjeet ,  SCOTT, Graeme Jamieson ,  SABHARWAL, Amitabh ,  KUMAR, Ajay

Inventor： SINGH, Saravjeet ,  SCOTT, Graeme Jamieson ,  SABHARWAL, Amitabh ,  KUMAR, Ajay

IPC: H01L21/3065

Abstract: Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.

公开(公告)号：WO2003070415A1

公开(公告)日：2003-08-28

申请号：PCT/US2002/027456

申请日：2002-08-29

Applicant: HEWLETT-PACKARD COMPANY ,  HUTH, Mark, C. ,  POLLARD, Jeffrey, R. ,  SCOTT, Graeme

Inventor： HUTH, Mark, C. ,  POLLARD, Jeffrey, R. ,  SCOTT, Graeme

IPC: B23K26/12

CPC classification number: B23K26/123 ,  B23K26/125 ,  B23K26/142 ,  B23K26/1462 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1634

Abstract: The described embodiments relate to methods and systems for laser micromachining a substrate (206). One exemplary embodiment positions (802) a substrate (206) in an open air environment (403). The substrate (206) has a thickness defined by opposing first (210) and second (212) surfaces. The substrate (206) can be cut by directing (804) a laser beam (406) at the first surface (210) of the substrate (206) and introducing (806) an assist gas (414) proximate to a region (411) of the substrate (206) contacted by the laser beam (406).

Abstract translation: 所描述的实施例涉及用于激光微加工衬底（206）的方法和系统。 一个示例性实施例在空气环境（403）中定位（802）衬底（206）。 衬底（206）具有由相对的第一（210）和第二（212）表面限定的厚度。 可以通过在衬底（206）的第一表面（210）处引导（804）激光束（406）并且将更靠近区域（411）的辅助气体（414）引入（806）来切割衬底（206） 的基板（206）与激光束（406）接触。

公开(公告)号：WO2012166265A2

公开(公告)日：2012-12-06

申请号：PCT/US2012034922

申请日：2012-04-25

Applicant: APPLIED MATERIALS INC ,  SINGH SARAVJEET ,  SCOTT GRAEME JAMIESON ,  SABHARWAL AMITABH ,  KUMAR AJAY

Inventor： SINGH SARAVJEET ,  SCOTT GRAEME JAMIESON ,  SABHARWAL AMITABH ,  KUMAR AJAY

IPC: H01L21/3065

CPC classification number: H01J37/32082 ,  H01J37/32477 ,  H01J37/32651

Abstract: Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.

Abstract translation: 本发明的实施例一般涉及用于等离子体蚀刻基板的方法和装置，更具体地说，涉及一种对被处理的基板的边缘，侧面和背面进行保护的方法和装置。 本发明的实施例提供了一种边缘保护板，该边缘保护板的尺寸小于被加工的基板，其中边缘保护板可以位于等离子体室中靠近基板的位置。 边缘保护板与基板上的边缘和/或侧面重叠以对基板的边缘，侧面和背面上的反射涂层提供保护。

公开(公告)号：WO2012166264A2

公开(公告)日：2012-12-06

申请号：PCT/US2012/034915

申请日：2012-04-25

Applicant: APPLIED MATERIALS, INC. ,  SINGH, Saravjeet ,  SCOTT, Graeme Jamieson ,  KUMAR, Ajay

Inventor： SINGH, Saravjeet ,  SCOTT, Graeme Jamieson ,  KUMAR, Ajay

IPC: H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/334

Abstract: Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.

Abstract translation: 本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。 离子蚀刻室具有包围处理区域的室主体，设置在处理区域中的基板支撑件，并且具有基板接收表面，设置在室主体面向基板接收表面的壁上的等离子体源，离子基屏蔽 设置在等离子体源和基板接收表面之间，以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。 可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。 离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。 孔径尺寸，形状和/或中心轴位置可以使用插入件来改变。

公开(公告)号：WO2012054238A3

公开(公告)日：2012-06-14

申请号：PCT/US2011055100

申请日：2011-10-06

Applicant: APPLIED MATERIALS INC ,  OUYE ALAN H ,  SCOTT GRAEME ,  YU KEVEN KAISHENG ,  GRIMBERGEN MICHAEL N

Inventor： OUYE ALAN H ,  SCOTT GRAEME ,  YU KEVEN KAISHENG ,  GRIMBERGEN MICHAEL N

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/205

CPC classification number: H05B3/42 ,  H01J37/32522 ,  H05B2203/003

Abstract: Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base.

Abstract translation: 本发明的实施例通常提供一种用于等离子体处理室的盖式加热器。 在一个实施例中，提供了包括导热基座的盖加热器组件。 导热基座具有限定内部开口的平面环状。 盖加热器组件还包括设置在导热基座上的加热元件，以及横跨导热基底的内部开口设置的绝缘中心芯。