公开(公告)号：WO2005091988A3

公开(公告)日：2006-12-07

申请号：PCT/US2005008943

申请日：2005-03-18

Applicant: FAIRCHILD SEMICONDUCTOR ,  SENG WILLIAM F ,  WOODIN RICHARD L

Inventor： SENG WILLIAM F ,  WOODIN RICHARD L

IPC: H01L27/095 ,  H01L21/04 ,  H01L29/24 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0256 ,  H01L31/0312

CPC classification number: H01L21/0495 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/812 ,  H01L29/872 ,  Y10S438/931

Abstract: A Schottky baroer silicon carbide device has a Re Schottky metal contact. The Re contact (27) is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

Abstract translation: 肖特基巴氏碳化硅器件具有肖特基金属触点。 Re触点（27）厚于250埃，可以在2000和4000埃之间。 通过离子铣削肖特基接触周围的环形区域提供端接结构。

公开(公告)号：WO2005091988A2

公开(公告)日：2005-10-06

申请号：PCT/US2005/008943

申请日：2005-03-18

Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION ,  SENG, William, F. ,  WOODIN, Richard, L.

Inventor： SENG, William, F. ,  WOODIN, Richard, L.

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0312

CPC classification number: H01L21/0495 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/812 ,  H01L29/872 ,  Y10S438/931

Abstract: A Schottky baroer silicon carbide device has a Re Schottky metal contact. The Re contact (27) is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

Abstract translation: 肖特基巴氏碳化硅器件具有肖特基金属触点。 Re触点（27）厚于250埃，可以在2000和4000埃之间。 通过离子铣削肖特基接触周围的环形区域提供端接结构。