公开(公告)号：WO2006103643A1

公开(公告)日：2006-10-05

申请号：PCT/IE2006/000022

申请日：2006-03-30

申请人： THE PROVOST, FELLOWS AND SCHOLARS OF THE COLLEGE OF THE HOLY AND UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN ,  O'BRIEN, Canice, Gerard ,  SEO, Woon-Ho ,  WU, Guan-Hong ,  DONEGAN, John, Francis

发明人： O'BRIEN, Canice, Gerard ,  SEO, Woon-Ho ,  WU, Guan-Hong ,  DONEGAN, John, Francis

IPC分类号： H01S5/223 ,  H01S5/065 ,  H01S5/22 ,  H01S5/20 ,  H01S5/343

CPC分类号： H01S5/065 ,  B82Y20/00 ,  H01S5/0658 ,  H01S5/222 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/3434

摘要： A heterostructure self-pulsating laser device (1) comprising an active layer (5) with first and second cladding layers (6, 7) on respective opposite sides of the active layer (5) is grown on an n-substrate (2) of indium phosphide, the second cladding layer (7) being grown on the substrate (2), the active layer (5) being grown on the second cladding layer (7), and the first cladding layer (6) being grown on the active layer (5). A current blocking layer (12) is formed in the first cladding layer (6) and divides the first cladding layer (6) to form a distal cladding layer (15) and a proximal cladding layer (16) adjacent the active layer (5). A channel (14) defined by the current blocking layer (12) confines the current in the first cladding layer (6) and determines the width of the active light generating area of the active layer (5). The first and second cladding layers (6, 7) and the current blocking layer (12) are of grown doped indium phosphide. The first cladding layer (6) is doped to be a p-type layer and the second cladding layer (7) and the current blocking layer (12) are doped to be of n-type. The level of dopant in the current blocking layer (12) is approximately ten times greater than the level of doping in the first cladding layer (6) in order to establish an effective refractive index step in the lateral direction of the active layer (5) in order to confine light generated in the active layer (5). A continuous wave operating laser device is also described.

摘要翻译： 在有源层（5）的相对的相对侧上包括具有第一和第二覆层（6,7）的有源层（5）的异质结构自脉动激光器件（1）生长在n型衬底（2）上 磷化铟，第二包层（7）在衬底（2）上生长，有源层（5）生长在第二覆层（7）上，并且第一覆层（6）在有源层上生长 （5）。 在第一包层（6）中形成电流阻挡层（12），并分隔第一覆层（6）以形成与活性层（5）相邻的远侧包层（15）和近侧包层（16） 。 由电流阻挡层（12）限定的沟道（14）将电流限制在第一覆层（6）中，并确定有源层（5）的有源光产生区域的宽度。 第一和第二覆层（6,7）和电流阻挡层（12）是生长掺杂的磷化铟。 第一覆层（6）掺杂为p型层，第二覆层（7）和电流阻挡层（12）掺杂为n型。 为了在有源层（5）的横向方向上建立有效的折射率步骤，电流阻挡层（12）中的掺杂剂的水平比第一包层（6）中的掺杂水平大大约十倍， 以限制在活性层（5）中产生的光。 还描述了连续波操作激光装置。