METHOD OF FORMING A NANOPOROUS DIELECTRIC FILM
    1.
    发明申请
    METHOD OF FORMING A NANOPOROUS DIELECTRIC FILM 审中-公开
    形成纳米电介质膜的方法

    公开(公告)号:WO2006001790A1

    公开(公告)日:2006-01-05

    申请号:PCT/US2004/018390

    申请日:2004-06-10

    Abstract: A method comprising forming a coating solution which comprises a matrix precursor material, a porogen material and a solvent, by selecting a polyarylene matrix precursor material which cross-links to form a matrix with a calculated cross-link moeity density of at least 0.003 moles/ml, and reacting the polyarylene matrix precursor material with a porogen which is linear oligomer or polymer which is formed from monomers comprising alkenyl or alkynyl functional monomers, which has reactive end groups and a weight average molecular weight in the range of less than about 5000, where the porogen is present in amounts in the range of about 10 to less than 50 percent by weight based on total weight of porogens and matrix precursor material.

    Abstract translation: 一种方法,包括通过选择交联以形成基质的聚亚芳基基质前体材料形成包含基体前体材料,致孔剂材料和溶剂的涂布溶液,计算的交联摩尔密度为至少0.003摩尔/ 并且使聚亚芳基基质前体材料与作为线性低聚物或聚合物的致孔剂反应,所述致孔剂由具有反应性端基和重均分子量在小于约5000的范围内的包含链烯基或炔基官能单体的单体形成, 其中致孔剂以基于致孔剂和基质前体材料的总重量计约10至小于50重量%的量存在。

Patent Agency Ranking