公开(公告)号：WO2012112959A1

公开(公告)日：2012-08-23

申请号：PCT/US2012/025746

申请日：2012-02-17

Applicant: TOKYO ELECTRON LIMITED ,  MADRIAGA, Manuel ,  TIAN, Xinkang

Inventor： MADRIAGA, Manuel ,  TIAN, Xinkang

IPC: C23F1/00 ,  H01L21/302

CPC classification number: H01L21/67069 ,  H01J37/32935 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/12 ,  H01L22/20

Abstract: Provided is a method and system for controlling a fabrication cluster for processing of a substrate in an etch process, the fabrication cluster having equipment settings and process parameters. A correlation of etch stage measurements to actual etch stage data is developed, the etch stage measurements comprising measurements using two or more optical metrology devices and an etch sensor device. An etch stage value is extracted using the developed correlation and the etch stage measurement. If the etch stage measurement objectives are not met, the metrology devices are modified, a different etch sensor device is selected, the etch stage measurements are enhanced, and/or the correlation algorithm is refined. The steps are iterated until the etch stage measurement objectives are met. The extracted etch stage value is used to adjust an equipment setting and/or process parameter of the fabrication cluster.

Abstract translation: 提供了一种用于在蚀刻工艺中控制用于处理衬底的制造簇的方法和系统，该制造集群具有设备设置和工艺参数。 开发了蚀刻阶段测量与实际蚀刻阶段数据的相关性，蚀刻阶段测量包括使用两个或更多个光学测量装置和蚀刻传感器装置的测量。 使用显影的相关和蚀刻阶段测量提取蚀刻阶段值。 如果不满足蚀刻阶段测量目标，则对测量装置进行修改，选择不同的蚀刻传感器装置，增强蚀刻阶段测量值和/或相关性算法。 重复这些步骤直到满足蚀刻阶段测量目标。 提取的蚀刻阶段值用于调整制造集群的设备设置和/或过程参数。

公开(公告)号：WO2018182967A1

公开(公告)日：2018-10-04

申请号：PCT/US2018/022209

申请日：2018-03-13

Applicant: TOKYO ELECTRON LIMITED ,  TUITJE, Holger ,  TIAN, Xinkang ,  MENG, Ching-ling ,  VUONG, Vi ,  JIN, Wen ,  YAN, Zheng ,  MIHAYLOV, Mihail

Inventor： TUITJE, Holger ,  TIAN, Xinkang ,  MENG, Ching-ling ,  VUONG, Vi ,  JIN, Wen ,  YAN, Zheng ,  MIHAYLOV, Mihail

IPC: H01L21/67 ,  H01L21/3065 ,  H01L21/66

Abstract: An apparatus, system, and method for in-situ etching monitoring in a plasma processing chamber. The apparatus includes a continuous wave broadband light source; an illumination system configured to illuminate an area on a substrate with an incident light beam having a fixed polarization direction, the incident light beam from the broadband light source being modulated by a shutter; a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector; and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property value from the processed light, and control an etch process based on the determined property value.

公开(公告)号：WO2017210281A1

公开(公告)日：2017-12-07

申请号：PCT/US2017/035187

申请日：2017-05-31

Applicant: TOKYO ELECTRON LIMITED ,  TIAN, Xinkang ,  MENG, Ching-Ling

Inventor： TIAN, Xinkang ,  MENG, Ching-Ling

IPC: G01N21/88 ,  G01B11/02 ,  G01N21/00 ,  G01N21/84

Abstract: Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least a portion of the illuminated spot, and detecting, by an optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.

Abstract translation: 提供了用于检查衬底的方法，系统和设备。 该方法包括用单一激光束照射衬底，单一激光束在衬底上形成照亮斑点并在衬底表面上形成明亮的条纹，明亮条纹在照亮斑点的至少一部分上延伸，以及检测 通过光学检测系统检测来自照射点内衬底上的纳米缺陷的散射光。