公开(公告)号：WO2007060640A2

公开(公告)日：2007-05-31

申请号：PCT/IB2006/054445

申请日：2006-11-27

Applicant: NXP B.V. ,  BESLING, Wim, F., A. ,  VANYPRE, Thomas

Inventor： BESLING, Wim, F., A. ,  VANYPRE, Thomas

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53295 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A method of forming a capping layer on a copper interconnect line (14). The method comprises providing a layer (20) of Aluminium over the interconnect line (14) and the dielectric layer (10) in which it is embedded. This may be achieved by deposition or chemical exposure. The structure is then subjected to a process, such as annealing or further chemical exposure, in an environment containing, for example, Nitrogen atoms, so as to cause indiffusion of Al into the copper line (14) and nitridation to form a diffusion barrier 26 of the intermetallic compound CuAlN.

Abstract translation: 一种在铜互连线（14）上形成覆盖层的方法。 该方法包括在互连线（14）和其所嵌入的介电层（10）上提供铝层（20）。 这可以通过沉积或化学暴露来实现。 然后在含有例如氮原子的环境中对该结构进行诸如退火或进一步化学暴露的处理，从而引起Al向铜线（14）内扩散和氮化以形成扩散阻挡层26 的金属间化合物CuAlN。

公开(公告)号：WO2007060640A3

公开(公告)日：2007-10-11

申请号：PCT/IB2006054445

申请日：2006-11-27

Applicant: NXP BV ,  BESLING WIM F A ,  VANYPRE THOMAS

Inventor： BESLING WIM F A ,  VANYPRE THOMAS

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53295 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A method of forming a capping layer on a copper interconnect line (14). The method comprises providing a layer (20) of Aluminium over the interconnect line (14) and the dielectric layer (10) in which it is embedded. This may be achieved by deposition or chemical exposure. The structure is then subjected to a process, such as annealing or further chemical exposure, in an environment containing, for example, Nitrogen atoms, so as to cause indiffusion of Al into the copper line (14) and nitridation to form a diffusion barrier 26 of the intermetallic compound CuAlN.

Abstract translation: 一种在铜互连线（14）上形成覆盖层的方法。 所述方法包括在所述互连线（14）上设置铝层（20）和所述电介质层（10）。 这可以通过沉积或化学暴露来实现。 然后在包含例如氮原子的环境中对该结构进行诸如退火或进一步的化学暴露的处理，以使Al向铜线（14）中扩散并进行氮化以形成扩散阻挡层26 的金属间化合物CuAlN。