SCHOTTKY DIODE AND METHOD OF MANUFACTURE
    4.
    发明申请
    SCHOTTKY DIODE AND METHOD OF MANUFACTURE 审中-公开
    肖特基二极管及其制造方法

    公开(公告)号:WO2011061696A1

    公开(公告)日:2011-05-26

    申请号:PCT/IB2010/055238

    申请日:2010-11-17

    Abstract: A method of manufacturing Schottky diodes in a CMOS process includes forming wells, including first wells (16) for forming CMOS devices and second wells (18) for forming Schottky devices. Then, transistors are formed in the first wells, the second wells protected with a protection layer (20) and suicide contacts (40) formed to source and drain regions in the first wells. The protection layer is then removed, a Schottky material deposited and etched away except in a contact region in each second well to form a Schottky contact between the Schottky material (74) and each second well (18).

    Abstract translation: 在CMOS工艺中制造肖特基二极管的方法包括形成阱,包括用于形成CMOS器件的第一阱(16)和用于形成肖特基器件的第二阱(18)。 然后,在第一阱中形成晶体管,第二阱由保护层(20)和形成于第一阱中的源极和漏极区域的硅化物触点(40)保护。 然后去除保护层,除了在每个第二阱中的接触区域中沉积并蚀刻掉肖特基材料,以在肖特基材料(74)和每个第二阱(18)之间形成肖特基接触。

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