APPARATUS FOR EUV IMAGING AND METHODS OF USING SAME
    1.
    发明申请
    APPARATUS FOR EUV IMAGING AND METHODS OF USING SAME 审中-公开
    EUV成像装置及其使用方法

    公开(公告)号:WO2012096847A3

    公开(公告)日:2012-11-01

    申请号:PCT/US2012020504

    申请日:2012-01-06

    CPC classification number: G03F1/84 B82Y10/00 B82Y40/00 G03F1/24

    Abstract: One embodiment relates to an apparatus that includes an illumination source (102) for illuminating a target substrate (106), objective optics (108) for projecting the EUV light which is reflected from the target substrate, and a sensor (110) for detecting the projected EUV light. The objective optics includes a first mirror (202,302, or 402) which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror (204, 304, or 404) which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror (206, 306, or 406) which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror (208, 308, or 408) which is arranged to receive and reflect the EUV light which is reflected by the third mirror.

    Abstract translation: 一个实施例涉及一种装置,其包括用于照射目标基板(106)的照明源(102),用于投射从目标基板反射的EUV光的物镜(108)和用于检测目标基板 预计EUV灯。 物镜包括第一反射镜(202,302或402),第一反射镜(202,302或402)被布置成接收和反射从目标基底反射的EUV光,第二反射镜(204,304或404),其布置成接收和反射 由第一反射镜反射的EUV光,被配置为接收和反射由第二反射镜反射的EUV光的第三反射镜(206,306或406)和第四反射镜(208,308或408) ),其被布置成接收和反射由第三反射镜反射的EUV光。

    PERIODIC DIFFRACTING SYSTEM FOR SAMPLE MEASUREMENT

    公开(公告)号:WO2006076484A3

    公开(公告)日:2006-07-20

    申请号:PCT/US2006/001067

    申请日:2006-01-11

    Abstract: To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.

    SYSTEM FOR MEASURING A SAMPLE WITH A LAYER CONTAINING A PERIODIC DIFFRACTING STRUCTURE
    3.
    发明申请
    SYSTEM FOR MEASURING A SAMPLE WITH A LAYER CONTAINING A PERIODIC DIFFRACTING STRUCTURE 审中-公开
    用于测量具有周期性差分结构的层的样品的系统

    公开(公告)号:WO2006076484A2

    公开(公告)日:2006-07-20

    申请号:PCT/US2006001067

    申请日:2006-01-11

    CPC classification number: G01N21/211 G01N21/8422 G01N2021/213

    Abstract: To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.

    Abstract translation: 为了测量膜的一维或二维衍射结构的临界尺寸和其它参数,可以通过首先进行薄膜厚度的测量来简化计算,使用不改变临界尺寸的膜模型 或与结构的其他特征相关的参数。 可以使用膜模型来充分准确地估计膜的厚度,使得可以采用这种估计来简化用于导出临界尺寸和与二维衍射结构相关的其它参数的结构模型。

    APPARATUS FOR EUV IMAGING AND METHODS OF USING SAME
    4.
    发明申请
    APPARATUS FOR EUV IMAGING AND METHODS OF USING SAME 审中-公开
    用于EUV成像的设备和使用该设备的方法

    公开(公告)号:WO2012096847A2

    公开(公告)日:2012-07-19

    申请号:PCT/US2012/020504

    申请日:2012-01-06

    CPC classification number: G03F1/84 B82Y10/00 B82Y40/00 G03F1/24

    Abstract: One embodiment relates to an apparatus that includes an illumination source (102) for illuminating a target substrate (106), objective optics (108) for projecting the EUV light which is reflected from the target substrate, and a sensor (110) for detecting the projected EUV light. The objective optics includes a first mirror (202,302, or 402) which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror (204, 304, or 404) which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror (206, 306, or 406) which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror (208, 308, or 408) which is arranged to receive and reflect the EUV light which is reflected by the third mirror.

    Abstract translation: 一个实施例涉及一种装置,其包括用于照射目标基板(106)的照明源(102),用于投射从目标基板反射的EUV光的物镜(108),以及 传感器(110),用于检测投射的EUV光。 物镜光学器件包括布置成接收和反射从目标基板反射的EUV光的第一反射镜(202,302或402),布置成接收和反射从目标基板反射的EUV光的第二反射镜(204,304或404) 由第一反射镜反射的EUV光,布置成接收和反射由第二反射镜反射的EUV光的第三反射镜(206,306或406),以及第四反射镜(208,308或408 ),其被安排成接收和反射由第三反射镜反射的EUV光。

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