公开(公告)号：WO2013055798A1

公开(公告)日：2013-04-18

申请号：PCT/US2012/059565

申请日：2012-10-10

Applicant: BREWER SCIENCE INC. ,  KRISHNAMURTHY, Vandana ,  SULLIVAN, Daniel M. ,  WANG, Yubao ,  LIN, Qin ,  SIMMONS, Sean

Inventor： KRISHNAMURTHY, Vandana ,  SULLIVAN, Daniel M. ,  WANG, Yubao ,  LIN, Qin ,  SIMMONS, Sean

IPC: H01L21/20 ,  H01L21/027 ,  H01L21/205

CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

Abstract translation: 本文描述的本发明涉及在溶剂体系中包含聚酰胺酸组合物和交联剂的旋涂碳材料。 这些材料可用于三层光刻工艺。 用本发明组合物制成的薄膜不溶于通常用于平版印刷材料的溶剂中，例如但不限于PGME，PGMEA和环己酮。 然而，这些膜可以溶解在通常用于光刻中的显影剂中。 在一个实施方案中，可以在高温下加热膜以改善用于高温处理的热稳定性。 不管实施例如何，材料可以应用于平面/平面或图案化表面。 有利地，该材料在使用碳氟化合物蚀刻的图案转移到硅衬底期间表现出摆动阻力。

公开(公告)号：WO2004065428A2

公开(公告)日：2004-08-05

申请号：PCT/US2004001480

申请日：2004-01-16

Applicant: BREWER SCIENCE INC ,  FLAIM TONY D ,  WANG YUBAO ,  MERCADO RAMIL-MARCELO L

Inventor： FLAIM TONY D ,  WANG YUBAO ,  MERCADO RAMIL-MARCELO L

IPC: B05D3/02 ,  C04B35/00 ,  C08F20060101 ,  C08F2/00 ,  C08G79/00 ,  C08K3/00 ,  C08K3/10 ,  C08K5/00 ,  C08K5/56 ,  C08L85/00 ,  C08F

CPC classification number: C08G79/00 ,  C08K5/0091 ,  C08K5/56 ,  C08L85/00 ,  Y10T428/25 ,  C08L2666/02

Abstract: Novel compositions and methods of using those compositions to form metal oxide films or coatings are provided. The compositions comprise an organometallic oligomer and an organic polymer dispersed or dissolved in a solvent system. The compositions have long shelf lives and can be prepared by easy and reliable preparation procedures. The compositions can be cured to cause conversion of the compositions into films of metal oxide interdispersed with organic polymer or oligomer. The cured films have high refractive indices, high optical clarities, and good mechanical stabilities at film thickness of greater than about 1 µm.

Abstract translation: 提供了使用这些组合物形成金属氧化物膜或涂层的新型组合物和方法。 组合物包含分散或溶解在溶剂体系中的有机金属低聚物和有机聚合物。 组合物具有长的保质期，并且可以通过简单和可靠的制备方法制备。 组合物可以固化以使组合物转化成与有机聚合物或低聚物分散的金属氧化物的膜。 固化膜的折射率高，光学透明度高，膜厚大于约1μm时的机械稳定性好。

公开(公告)号：WO2013006314A2

公开(公告)日：2013-01-10

申请号：PCT/US2012044248

申请日：2012-06-26

Applicant: BREWER SCIENCE INC ,  SULLIVAN DANIEL M ,  NEEF CHARLES J ,  WANG YUBAO ,  OUATTARA TANTIBORO

Inventor： SULLIVAN DANIEL M ,  NEEF CHARLES J ,  WANG YUBAO ,  OUATTARA TANTIBORO

CPC classification number: H01L21/0276 ,  C08G77/58 ,  C09D183/14 ,  G03F7/0752 ,  G03F7/09 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  Y10T428/24802

Abstract: Metal-oxide films for lithographic applications are provided. The films are formed from compositions comprising metal-oxide precursor compounds including metals and metalloids other than silicon. These films are easily produced and can be modified with a variety of ligands, including alkoxides, phenoxides, carboxylates, beta-diketones, and beta-ketoesters.

Abstract translation: 提供了用于光刻应用的金属氧化物膜。 该膜由包含金属和氧化物前体化合物的组合物形成，包括除硅以外的金属和准金属。 这些膜容易生产，并且可以用各种配体进行改性，包括醇盐，苯氧化物，羧酸盐，β-二酮和β-酮​​酯。

公开(公告)号：WO2012142126A3

公开(公告)日：2013-05-02

申请号：PCT/US2012033073

申请日：2012-04-11

Applicant: BREWER SCIENCE INC ,  LIN QIN ,  WANG YUBAO ,  FLAIM TONY D

Inventor： LIN QIN ,  WANG YUBAO ,  FLAIM TONY D

IPC: H01L21/027

CPC classification number: G03F7/075 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/20

Abstract: Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 m.

Abstract translation: 提供了辐射敏感的溶胶 - 凝胶组合物，以及形成微电子结构和如此形成的结构的方法。 组合物包含分散或溶解在溶剂体系中的溶胶 - 凝胶化合物和碱产生剂。 溶胶 - 凝胶化合物包括具有与硅结合的可交联部分的包含硅的重复单体单元。 暴露于辐射后，基底发生器产生强碱，其使组合物中的溶胶 - 凝胶化合物交联，得到不溶于显影剂或溶剂的交联层。 可以除去该层的未曝光部分以产生图案化的溶胶 - 凝胶层。 本发明可以用于形成包含特征尺寸小于约1μm的特征的溶胶 - 凝胶材料的图案。

公开(公告)号：WO2012092139A2

公开(公告)日：2012-07-05

申请号：PCT/US2011/066910

申请日：2011-12-22

Applicant: BREWER SCIENCE INC. ,  WASHBURN, Carlton Ashley ,  LAMB, James E., III ,  BRAKENSIEK, Nickolas L. ,  LIN, Qin ,  WANG, Yubao ,  KRISHNAMURTHY, Vandana ,  SCOTT, Claudia

Inventor： WASHBURN, Carlton Ashley ,  LAMB, James E., III ,  BRAKENSIEK, Nickolas L. ,  LIN, Qin ,  WANG, Yubao ,  KRISHNAMURTHY, Vandana ,  SCOTT, Claudia

IPC: H01L21/027

CPC classification number: H01L21/0337 ,  C09D5/00 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/40 ,  H01L21/0338 ,  Y10T428/24612

Abstract: Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.

Abstract translation: 提供了形成微电子结构的方法。 所述方法包括使用受控的底切工艺形成T形结构，以及将选择性可蚀刻的组合物沉积到T形结构的底切区域中。 随后去除T形结构以产生符合T形结构的底切区域的宽度和任选的高度的极小的底切形特征。 这些方法可以与其他常规图案化方法组合以产生具有极小特征尺寸的结构，而与用于图案化的光的波长无关。

公开(公告)号：WO2013006314A3

公开(公告)日：2013-01-10

申请号：PCT/US2012/044248

申请日：2012-06-26

Applicant: BREWER SCIENCE INC. ,  SULLIVAN, Daniel M. ,  NEEF, Charles J. ,  WANG, Yubao ,  OUATTARA, Tantiboro

Inventor： SULLIVAN, Daniel M. ,  NEEF, Charles J. ,  WANG, Yubao ,  OUATTARA, Tantiboro

IPC: C08L85/00 ,  C08L101/00 ,  C08J5/18 ,  G03F7/004 ,  H01L21/027

Abstract: Metal-oxide films for lithographic applications are provided. The films are formed from compositions comprising metal-oxide precursor compounds including metals and metalloids other than silicon. These films are easily produced and can be modified with a variety of ligands, including alkoxides, phenoxides, carboxylates, beta-diketones, and beta-ketoesters.

公开(公告)号：WO2012142126A2

公开(公告)日：2012-10-18

申请号：PCT/US2012/033073

申请日：2012-04-11

Applicant: BREWER SCIENCE INC. ,  LIN, Qin ,  WANG, Yubao ,  FLAIM, Tony D.

Inventor： LIN, Qin ,  WANG, Yubao ,  FLAIM, Tony D.

IPC: H01L21/027

CPC classification number: G03F7/075 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/20

Abstract: Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 m.

Abstract translation: 提供了辐射敏感的溶胶 - 凝胶组合物，以及形成微电子结构和如此形成的结构的方法。 组合物包含分散或溶解在溶剂体系中的溶胶 - 凝胶化合物和碱产生剂。 溶胶 - 凝胶化合物包括具有与硅结合的可交联部分的包含硅的重复单体单元。 暴露于辐射后，基底发生器产生强碱，其使组合物中的溶胶 - 凝胶化合物交联，得到不溶于显影剂或溶剂的交联层。 可以除去该层的未曝光部分以产生图案化的溶胶 - 凝胶层。 本发明可以用于形成包含特征尺寸小于约1μm的特征的溶胶 - 凝胶材料的图案。

公开(公告)号：WO2012092139A3

公开(公告)日：2012-10-18

申请号：PCT/US2011066910

申请日：2011-12-22

Applicant: BREWER SCIENCE INC ,  WASHBURN CARLTON ASHLEY ,  LAMB JAMES E III ,  BRAKENSIEK NICKOLAS L ,  LIN QIN ,  WANG YUBAO ,  KRISHNAMURTHY VANDANA ,  SCOTT CLAUDIA

Inventor： WASHBURN CARLTON ASHLEY ,  LAMB JAMES E III ,  BRAKENSIEK NICKOLAS L ,  LIN QIN ,  WANG YUBAO ,  KRISHNAMURTHY VANDANA ,  SCOTT CLAUDIA

IPC: H01L21/027

CPC classification number: H01L21/0337 ,  C09D5/00 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/40 ,  H01L21/0338 ,  Y10T428/24612

Abstract: Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.

Abstract translation: 提供了形成微电子结构的方法。 该方法包括使用受控的底切过程形成T形结构，以及将可选择性蚀刻的组合物沉积到T形结构的底切区域中。 随后移除T形结构以产生非常小的底切形成的特征，其与T形结构的底切区域的宽度和可选地高度相符。 这些方法可以与其他常规图案化方法相结合，以创建具有非常小的特征尺寸的结构，而与用于图案化的光的波长无关。

公开(公告)号：WO2004065428A3

公开(公告)日：2004-08-05

申请号：PCT/US2004/001480

申请日：2004-01-16

Applicant: BREWER SCIENCE, INC. ,  FLAIM, Tony, D. ,  WANG, Yubao ,  MERCADO, Ramil-Marcelo, L.

Inventor： FLAIM, Tony, D. ,  WANG, Yubao ,  MERCADO, Ramil-Marcelo, L.

IPC: B05D03/02

Abstract: Novel compositions and methods of using those compositions to form metal oxide films or coatings are provided. The compositions comprise an organometallic oligomer and an organic polymer dispersed or dissolved in a solvent system. The compositions have long shelf lives and can be prepared by easy and reliable preparation procedures. The compositions can be cured to cause conversion of the compositions into films of metal oxide interdispersed with organic polymer or oligomer. The cured films have high refractive indices, high optical clarities, and good mechanical stabilities at film thickness of greater than about 1 µm.