MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS
    1.
    发明申请
    MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS 审中-公开
    具有正交磁化定向方向的参考层的磁性堆栈

    公开(公告)号:WO2011008615A1

    公开(公告)日:2011-01-20

    申请号:PCT/US2010/041300

    申请日:2010-07-08

    Abstract: A magnetic cell (10) includes a ferromagnetic free layer (18) having a free magnetization orientation direction (M F ) and a first ferromagnetic pinned reference layer (14) having a first reference magnetization orientation direction (M R1 )that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer (16) is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer (13) having a second reference magnetization orientation direction (M R2 ) that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

    Abstract translation: 磁性电池(10)包括具有自由磁化取向方向(MF)的铁磁自由层(18)和具有平行或反平行的第一参考磁化取向方向(MR1)的第一铁磁性固定参考层(14) 到自由磁化取向方向。 第一氧化物阻挡层(16)在铁磁性自由层和第一铁磁性固定参考层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向(MR2)的第二铁磁性固定参考层(13)。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

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