Abstract:
A magnetic cell (10) includes a ferromagnetic free layer (18) having a free magnetization orientation direction (M F ) and a first ferromagnetic pinned reference layer (14) having a first reference magnetization orientation direction (M R1 )that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer (16) is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer (13) having a second reference magnetization orientation direction (M R2 ) that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.