公开(公告)号：WO2011008616A1

公开(公告)日：2011-01-20

申请号：PCT/US2010/041303

申请日：2010-07-08

Applicant: SEAGATE TECHNOLOGY LLC ,  YUANKAI, Zheng ,  XIAOHUA, Lou ,  HAIWEN, Xi ,  Tang, Michael

Inventor： YUANKAI, Zheng ,  XIAOHUA, Lou ,  HAIWEN, Xi ,  Tang, Michael

IPC: G11C11/16 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: Apparatus and associated method for writing data to a non-volatile memory cell (140, 154), such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) (140) has a heat assist region (150), magnetic tunneling junction (MTJ) (142), and pinned region (152). When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

Abstract translation: 用于将数据写入非易失性存储单元（140,154）的装置和相关方法，例如自旋转矩传递随机存取存储器（STRAM）。 根据一些实施例，电阻感测元件（RSE）（140）具有热辅助区域（150），磁性隧道结（MTJ）（142）和固定区域（152）。 当第一逻辑状态以自旋极化电流写入MTJ时，固定和热辅助区域各自具有基本为零的净磁矩。 当第二逻辑状态被写入具有静态磁场的MTJ时，被钉扎区域具有基本为零的净磁矩，并且热辅助区域具有非零净磁矩。

公开(公告)号：WO2011008615A1

公开(公告)日：2011-01-20

申请号：PCT/US2010/041300

申请日：2010-07-08

Applicant: SEAGATE TECHNOLOGY LLC ,  YUANKAI, Zheng ,  ZHENG, Gao ,  WENZHONG, Zhu ,  WONJOON, Jung ,  HAIWEN, Xi

Inventor： YUANKAI, Zheng ,  ZHENG, Gao ,  WENZHONG, Zhu ,  WONJOON, Jung ,  HAIWEN, Xi

IPC: G11C11/16 ,  H01L43/08

CPC classification number: H01F10/329 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/08

Abstract: A magnetic cell (10) includes a ferromagnetic free layer (18) having a free magnetization orientation direction (M F ) and a first ferromagnetic pinned reference layer (14) having a first reference magnetization orientation direction (M R1 )that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer (16) is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer (13) having a second reference magnetization orientation direction (M R2 ) that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

Abstract translation: 磁性电池（10）包括具有自由磁化取向方向（MF）的铁磁自由层（18）和具有平行或反平行的第一参考磁化取向方向（MR1）的第一铁磁性固定参考层（14） 到自由磁化取向方向。 第一氧化物阻挡层（16）在铁磁性自由层和第一铁磁性固定参考层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向（MR2）的第二铁磁性固定参考层（13）。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

公开(公告)号：WO2011008654A1

公开(公告)日：2011-01-20

申请号：PCT/US2010/041555

申请日：2010-07-09

Applicant: SEAGATE TECHNOLOGY LLC ,  Wei, Tian ,  Insik, Jin ,  Venugopalan, Vaithyanathan ,  Haiwen, Xi ,  Michael, Tang ,  Brian, Lee

Inventor： Wei, Tian ,  Insik, Jin ,  Venugopalan, Vaithyanathan ,  Haiwen, Xi ,  Michael, Tang ,  Brian, Lee

IPC: G11C11/16 ,  G11C13/02 ,  H01L27/24

CPC classification number: G11C11/16 ,  G11C13/0011 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/51 ,  G11C2213/76 ,  H01L27/2409 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246

Abstract: A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.

Abstract translation: 公开了一种包括非欧姆选择层的非易失性存储单元和相关方法。 根据一些实施例，非易失性存储器单元由耦合到非欧姆选择层的电阻感测元件（RSE）组成。 响应于大于或等于预定阈值的电流，选择层被配置为从第一电阻状态转变到第二电阻状态。