公开(公告)号：WO2011093520A1

公开(公告)日：2011-08-04

申请号：PCT/JP2011/052193

申请日：2011-01-27

Applicant: FUJIFILM Corporation ,  INASAKI, Takeshi ,  ITO, Takayuki ,  TSUCHIMURA, Tomotaka ,  YATSUO, Tadateru ,  TAKAHASHI, Koutarou

Inventor： INASAKI, Takeshi ,  ITO, Takayuki ,  TSUCHIMURA, Tomotaka ,  YATSUO, Tadateru ,  TAKAHASHI, Koutarou

IPC: G03F7/039 ,  C08F8/00 ,  G03F7/004 ,  H01L21/027

CPC classification number: C08F8/00 ,  C08F8/02 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  C08F112/14

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.

Abstract translation: 一种光化射线敏感或辐射敏感性树脂组合物，其包含（P）具有由下式（1）表示的重复单元的树脂，使用该组合物的抗蚀剂膜和图案形成方法。

公开(公告)号：WO2012098822A1

公开(公告)日：2012-07-26

申请号：PCT/JP2011/080549

申请日：2011-12-22

Applicant: FUJIFILM Corporation ,  TSUCHIMURA, Tomotaka ,  YATSUO, Tadateru

Inventor： TSUCHIMURA, Tomotaka ,  YATSUO, Tadateru

IPC: G03F7/038 ,  C08F12/24 ,  G03F7/039

CPC classification number: G03F7/0382 ,  C08F12/24 ,  C08F212/14 ,  C08F257/00 ,  C08K5/19 ,  C09D125/18 ,  G03F1/20 ,  G03F1/22 ,  G03F1/56 ,  G03F1/76 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2037 ,  G03F7/2039 ,  C08F212/32 ,  C08L25/18 ,  C08F2220/185 ,  C08F220/42

Abstract: A chemical amplification resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by a group having a non-acid-decomposable polycyclic alicyclic hydrocarbon structure; and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

Abstract translation: 化学增幅抗蚀剂组合物包含：（A）具有酚羟基的氢原子被具有非酸可分解的多环脂肪族烃结构的基团代替的结构的高分子化合物; 和（B）能够在用光化射线或辐射照射时能产生酸的化合物。

公开(公告)号：WO2010087516A1

公开(公告)日：2010-08-05

申请号：PCT/JP2010/051652

申请日：2010-01-29

Applicant: FUJIFILM Corporation ,  TSUCHIHASHI, Toru ,  YATSUO, Tadateru ,  SHIRAKAWA, Koji ,  TSUBAKI, Hideaki ,  ASANO, Akira

Inventor： TSUCHIHASHI, Toru ,  YATSUO, Tadateru ,  SHIRAKAWA, Koji ,  TSUBAKI, Hideaki ,  ASANO, Akira

IPC: G03F7/32 ,  G03F7/038

CPC classification number: G03F7/0382 ,  G03F7/0045 ,  G03F7/325

Abstract: A resist pattern forming method including in the following order, (1) a step of forming a film by using a negative chemical-amplification resist composition capable of undergoing negative conversion by a crosslinking reaction, (2) a step of exposing the film, and (4) a step of developing the exposed film by using a developer containing an organic solvent; a developer and a negative chemical-amplification resist composition used therefor; and a resist pattern formed by the pattern forming method.

Abstract translation: 一种抗蚀剂图案形成方法，包括以下顺序：（1）通过使用能够通过交联反应进行负转化的负性化学增幅抗蚀剂组合物形成膜的步骤，（2）曝光所述膜的步骤，以及 （4）通过使用含有有机溶剂的显影剂使曝光的膜显影的步骤; 用于此的显影剂和负化学放大抗蚀剂组合物; 以及通过图案形成方法形成的抗蚀剂图案。

公开(公告)号：WO2012132676A1

公开(公告)日：2012-10-04

申请号：PCT/JP2012/054478

申请日：2012-02-17

Applicant: FUJIFILM Corporation ,  TSUCHIHASHI, Toru ,  YATSUO, Tadateru ,  TAKAHASHI, Koutarou ,  TSUCHIMURA, Tomotaka

Inventor： TSUCHIHASHI, Toru ,  YATSUO, Tadateru ,  TAKAHASHI, Koutarou ,  TSUCHIMURA, Tomotaka

IPC: G03F7/038 ,  C08F12/14 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/20 ,  C08F8/14 ,  C08F12/24 ,  C08F212/14 ,  C08J3/24 ,  C08J2325/18 ,  G03F1/50 ,  G03F7/004 ,  G03F7/0382 ,  G03F7/325 ,  Y10S430/143 ,  C08F212/32

Abstract: A resist pattern forming method contains: in the following order, (1) forming a resist film by using a negative chemical amplification resist composition containing (A) a polymer compound having a repeating unit represented by formula (1) as defined in the specification, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a crosslinking agent capable of crosslinking the polymer compound (A) by an action of an acid; (2) exposing the resist film, so as to form an exposed resist film; and (4) developing the exposed resist film by using a developer containing an organic solvent.

Abstract translation: 抗蚀剂图案形成方法包括：（1）通过使用含有（A）具有如说明书中定义的由式（1）表示的重复单元的高分子化合物的负性化学增幅抗蚀剂组合物形成抗蚀剂膜， （B）能够通过光化射线或辐射照射时能够产生酸的化合物和（C）能够通过酸的作用使高分子化合物（A）交联的交联剂; （2）使抗蚀剂膜曝光，形成曝光的抗蚀剂膜; 和（4）通过使用含有有机溶剂的显影剂显影曝光的抗蚀剂膜。

公开(公告)号：WO2010104218A1

公开(公告)日：2010-09-16

申请号：PCT/JP2010/054727

申请日：2010-03-12

Applicant: FUJIFILM Corporation ,  TSUBAKI, Hideaki ,  SHIRAKAWA, Koji ,  YATSUO, Tadateru ,  TSUCHIHASHI, Toru ,  TSUCHIMURA, Tomotaka

Inventor： TSUBAKI, Hideaki ,  SHIRAKAWA, Koji ,  YATSUO, Tadateru ,  TSUCHIHASHI, Toru ,  TSUCHIMURA, Tomotaka

IPC: G03F7/039 ,  C08F12/22 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/0046

Abstract: According to one embodiment, an actinic-ray- or radiation-sensitive resin composition comprises (A) any of the compounds of General Formula (I) below and (B) a resin that contains the residue (c) of a compound having an ionization potential value lower than that of phenol and when acted on by an acid, exhibits an increased solubility in an alkali developer Formula (I), wherein Ar represents an aromatic ring having Cy groups and optionally further other substituents, n is an integer of 2 or greater, Cy represents a group having a substituted or unsubstituted alkyl group or a group having a substituted or unsubstituted cycloaliphatic group, provided that a plurality of Cy groups may be identical with or different from each other, and M + represents an organic onium ion.

Abstract translation: 根据一个实施方案，光化射线或辐射敏感性树脂组合物包含（A）下述通式（I）的任何化合物和（B）含有具有电离的化合物的残基（c）的树脂 潜在值低于苯酚，当被酸作用时，在碱显影剂式（I）中表现出增加的溶解度，其中Ar表示具有Cy基团和任选地进一步其它取代基的芳环，n为整数2或 更优选，Cy表示具有取代或未取代的烷基或具有取代或未取代的脂环族基团的基团，条件是多个Cy基团可以彼此相同或不同，M +表示有机鎓离子。