公开(公告)号：WO2008010957A3

公开(公告)日：2008-01-24

申请号：PCT/US2007/015987

申请日：2007-07-13

Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  YUNFEI, Ding

Inventor： YUNFEI, Ding

IPC: G11C11/00

Abstract: A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).

公开(公告)号：WO2008010957A2

公开(公告)日：2008-01-24

申请号：PCT/US2007015987

申请日：2007-07-13

Applicant: GRANDIS INC ,  RENESAS TECH CORP ,  YUNFEI DING

Inventor： YUNFEI DING

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/5607

Abstract: A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).

Abstract translation: 描述了一种用于提供和利用磁存储器的方法和系统。 磁存储器包括多个磁存储单元。 每个磁存储单元包括当写入电流通过磁性元件和选择装置时由于自旋转移而可编程的磁性元件。 该方法和系统包括驱动靠近但不通过磁存储单元的一部分的磁性元件的第一电流。 第一电流产生磁场。 该方法和系统还包括驱动第二电流通过磁存储单元的该部分的磁性元件。 第一和第二电流优选地通过与磁性元件耦合的位线驱动。 第一和第二电流在开始时被接通。 第二电流和磁场足以对磁性元件进行编程。