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    INTEGRATED VOLTAGE REGULATOR WITH EMBEDDED PASSIVE DEVICE(S)
    1.
    发明申请
    INTEGRATED VOLTAGE REGULATOR WITH EMBEDDED PASSIVE DEVICE(S) 审中-公开
    带嵌入式无源器件的集成电压调节器（S）

    公开(公告)号：WO2011028806A1

    公开(公告)日：2011-03-10

    申请号：PCT/US2010/047538

    申请日：2010-09-01

    Applicant: QUALCOMM INCORPORATED ,  PAN, Yuancheng Christopher ,  CHUA-EOAN, Lew G. ,  ZHU, Zhi ,  ZHANG, Junmou

    Inventor： PAN, Yuancheng Christopher ,  CHUA-EOAN, Lew G. ,  ZHU, Zhi ,  ZHANG, Junmou

    IPC: H01L23/64 ,  H01L25/10 ,  H01L25/16

    CPC classification number: H01L25/16 ,  H01L23/642 ,  H01L23/645 ,  H01L25/0652 ,  H01L2224/16225 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H02M3/00 ,  H05K1/0262 ,  H05K1/141 ,  H05K1/185

    Abstract: A semiconductor packaging system has a packaging substrate into which inductors and/or capacitors are partially or completely embedded. An active portion of a voltage regulator is mounted on the packaging substrate and supplies regulated voltage to a die also mounted on the packaging substrate. Alternatively, the active portion of the voltage regulator is integrated into the die the voltage regulator supplies voltage to. The voltage regulator cooperates with the inductors and/or capacitors to supply voltage to the die. The inductors may be through vias in the packaging substrate. For additional inductance, through vias in a printed circuit board on which the packaging substrate is mounted may couple to the through vias in the packaging substrate.

    Abstract translation: 半导体封装系统具有其中部分或完全嵌入电感器和/或电容器的封装衬底。 电压调节器的有源部分安装在封装基板上，并将调节的电压提供给也安装在封装基板上的管芯。 或者，电压调节器的有源部分集成到管芯中，电压调节器将电压提供给。 电压调节器与电感器和/或电容器配合以向模具提供电压。 电感器可以穿过封装衬底中的通孔。 对于额外的电感，通过安装封装衬底的印刷电路板中的通孔可以耦合到封装衬底中的通孔。

    ON-CHIP LOW VOLTAGE CAPACITOR-LESS LOW DROPOUT REGULATOR WITH Q-CONTROL
    2.
    发明申请
    ON-CHIP LOW VOLTAGE CAPACITOR-LESS LOW DROPOUT REGULATOR WITH Q-CONTROL 审中-公开
    片上低电压电容器，带Q控制的低压差调节器

    公开(公告)号：WO2011139739A3

    公开(公告)日：2011-12-29

    申请号：PCT/US2011034067

    申请日：2011-04-27

    Applicant: QUALCOMM INC ,  ZHANG JUNMOU ,  CHUA-EOAN LEW G

    Inventor： ZHANG JUNMOU ,  CHUA-EOAN LEW G

    IPC: G05F1/575

    CPC classification number: G05F1/575

    Abstract: Systems and method for a capacitor-less Low Dropout (LDO) voltage regulator. An error amplifier is configured to amplify a differential between a reference voltage and a regulated LDO voltage. Without including an external capacitor in the LDO voltage regulator, a Miller amplifier is coupled to an output of the error amplifier, wherein the Miller amplifier is configured to amplify a Miller capacitance formed at an input node of the Miller amplifier. A capacitor coupled to the output of the error amplifier creates a positive feedback loop for decreasing a quality factor (Q), such that system stability is improved.

    Abstract translation: 无电容低压差（LDO）稳压器的系统和方法。 误差放大器被配置为放大参考电压和经调节的LDO电压之间的差分。 在LDO电压调节器中不包括外部电容器的情况下，米勒放大器耦合到误差放大器的输出，其中米勒放大器被配置为放大在米勒放大器的输入节点处形成的米勒电容。 耦合到误差放大器输出的电容器产生用于降低品质因数（Q）的正反馈回路，从而改善系统稳定性。

    LOW VOLTAGE TEMPERATURE SENSOR AND USE THEREOF FOR AUTONOMOUS MULTIPROBE MEASUREMENT DEVICE
    4.
    发明申请
    LOW VOLTAGE TEMPERATURE SENSOR AND USE THEREOF FOR AUTONOMOUS MULTIPROBE MEASUREMENT DEVICE 审中-公开
    低电压温度传感器及其自动多媒体测量装置的使用

    公开(公告)号：WO2011119936A3

    公开(公告)日：2012-07-19

    申请号：PCT/US2011029965

    申请日：2011-03-25

    Applicant: QUALCOMM INC ,  ZHANG JUNMOU ,  CHUA-EOAN LEW G

    Inventor： ZHANG JUNMOU ,  CHUA-EOAN LEW G

    IPC: G05F3/30 ,  G01K7/01

    CPC classification number: G01K7/01 ,  G01K2215/00 ,  G05F3/30

    Abstract: A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.

    Abstract translation: 提出了一种测量集成电路内温度的带隙传感器。 传感器可以包括具有与第一电阻器和第一电流源串联耦合的发射极节点的第一晶体管，其中PTAT电流流过第一电阻器，以及第二晶体管，具有耦合到第一电阻器的基极节点的基极节点 晶体管和耦合到第一晶体管的集电极节点的集电极节点，其中第一和第二晶体管是二极管连接的。 传感器还可以包括向第一电流源提供负反馈的第一运算放大器，其中所述负反馈与所述第一和第二晶体管的基极 - 发射极电压的差异相关;以及第二运算放大器， 跨越第二电阻器的第二晶体管的发射极电压，其中CTAT电流流过第二电阻器。

    ON-CHIP LOW VOLTAGE CAPACITOR-LESS LOW DROPOUT REGULATOR WITH Q-CONTROL
    5.
    发明申请
    ON-CHIP LOW VOLTAGE CAPACITOR-LESS LOW DROPOUT REGULATOR WITH Q-CONTROL 审中-公开
    片上低电压电容器 - 带Q控制的低压差型稳压器

    公开(公告)号：WO2011139739A2

    公开(公告)日：2011-11-10

    申请号：PCT/US2011/034067

    申请日：2011-04-27

    Applicant: QUALCOMM INCORPORATED ,  ZHANG, Junmou ,  CHUA-EOAN, Lew G.

    Inventor： ZHANG, Junmou ,  CHUA-EOAN, Lew G.

    IPC: G05F1/575

    CPC classification number: G05F1/575

    Abstract: Systems and method for a capacitor-less Low Dropout (LDO) voltage regulator. An error amplifier is configured to amplify a differential between a reference voltage and a regulated LDO voltage. Without including an external capacitor in the LDO voltage regulator, a Miller amplifier is coupled to an output of the error amplifier, wherein the Miller amplifier is configured to amplify a Miller capacitance formed at an input node of the Miller amplifier. A capacitor coupled to the output of the error amplifier creates a positive feedback loop for decreasing a quality factor (Q), such that system stability is improved.

    Abstract translation: 无电容低压差（LDO）稳压器的系统和方法。 误差放大器被配置为放大参考电压和调节LDO电压之间的差分。 在LDO稳压器中不包括外部电容器的情况下，米勒放大器耦合到误差放大器的输出端，其中，米勒放大器被配置为放大在米勒放大器的输入节点处形成的米勒电容。 耦合到误差放大器的输出的电容器产生用于降低质量因子（Q）的正反馈回路，从而提高系统稳定性。

    LOW VOLTAGE TEMPERATURE SENSOR AND USE THEREOF FOR AUTONOMOUS MULTIPROBE MEASUREMENT DEVICE
    6.
    发明申请
    LOW VOLTAGE TEMPERATURE SENSOR AND USE THEREOF FOR AUTONOMOUS MULTIPROBE MEASUREMENT DEVICE 审中-公开
    低电压温度传感器及其自动多媒体测量装置的使用

    公开(公告)号：WO2011119936A2

    公开(公告)日：2011-09-29

    申请号：PCT/US2011/029965

    申请日：2011-03-25

    Applicant: QUALCOMM INCORPORATED ,  ZHANG, Junmou ,  CHUA-EOAN, Lew, G.

    Inventor： ZHANG, Junmou ,  CHUA-EOAN, Lew, G.

    IPC: G05F3/30

    CPC classification number: G01K7/01 ,  G01K2215/00 ,  G05F3/30

    Abstract: A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.

    Abstract translation: 提出了一种测量集成电路内温度的带隙传感器。 传感器可以包括具有与第一电阻器和第一电流源串联耦合的发射极节点的第一晶体管，其中PTAT电流流过第一电阻器，以及第二晶体管，具有耦合到第一电阻器的基极节点的基极节点 晶体管和耦合到第一晶体管的集电极节点的集电极节点，其中第一和第二晶体管是二极管连接的。 传感器还可以包括向第一电流源提供负反馈的第一运算放大器，其中所述负反馈与所述第一和第二晶体管的基极 - 发射极电压的差异相关;以及第二运算放大器， 跨越第二电阻器的第二晶体管的发射极电压，其中CTAT电流流过第二电阻器。

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