Abstract:
A multilayered structure including a first barrier layer adjacent to a substrate, a barrier bi-layer adjacent to the first barrier layer, the barrier bi-layer comprising a second barrier layer and a third barrier layer, a transparent conductive oxide layer adjacent to the barrier bi-layer, and a buffer layer adjacent to the transparent conductive oxide layer and method of forming the same. A multilayered substrate including a barrier layer structure having a plurality of barrier layers being alternating layers of low refractive index material and high refractive index material, a transparent conductive oxide layer adjacent to the barrier bi-layer and a buffer layer adjacent to the transparent conductive oxide layer. The multilayered structure may serve as a front contact for photovoltaic devices.
Abstract:
A photovoltaic device is disclosed, the device having a zinc-containing layer, such as a ZnO 1-x S x layer, as a window layer, as part of a composite window layer, and/or as a buffer layer. Use of the ZnO 1-x S x layer improves an overall efficiency of the photovoltaic device due to improved optical transmission thereof as compared to CdS window layers, and due to a improved quantum efficiency of the photovoltaic device in the blue light spectrum due to the presence of the ZnO 1-x S x layer.
Abstract:
Disclosed are photovoltaic module mounting assemblies with mounting clamps for connecting multiple photovoltaic modules into a photovoltaic array. One embodiment of the mounting assembly includes mounting clamps that are positioned on the mounting assembly parallel to the scribe lines of the module. Another embodiment of the mounting assembly uses mounting clamps that are configured to hold a portion of the module at a predetermined distance away from the photovoltaic cells of the module.
Abstract:
A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer material comprises at least one of CdZnO and SnZnO. The structure can be included in a photovoltaic device. Methods for forming the structure are also disclosed.
Abstract:
A method of manufacturing a photovoltaic device includes concurrently transforming a transparent conductive oxide layer from a substantially amorphous state to a substantially crystalline state and forming one or more semiconductor layers.
Abstract:
A method for manufacturing a multilayered structure may include forming a transparent conductive oxide layer including cadmium stannate adjacent to a substrate and annealing the structure in an annealing environment including a reducing agent at a temperature greater than 500 degrees C to crystallize the cadmium stannate.