PHOTOVOLTAIC DEVICE
    2.
    发明申请
    PHOTOVOLTAIC DEVICE 审中-公开
    光电器件

    公开(公告)号:WO2012021884A2

    公开(公告)日:2012-02-16

    申请号:PCT/US2011/047735

    申请日:2011-08-15

    Abstract: A multilayered structure including a first barrier layer adjacent to a substrate, a barrier bi-layer adjacent to the first barrier layer, the barrier bi-layer comprising a second barrier layer and a third barrier layer, a transparent conductive oxide layer adjacent to the barrier bi-layer, and a buffer layer adjacent to the transparent conductive oxide layer and method of forming the same. A multilayered substrate including a barrier layer structure having a plurality of barrier layers being alternating layers of low refractive index material and high refractive index material, a transparent conductive oxide layer adjacent to the barrier bi-layer and a buffer layer adjacent to the transparent conductive oxide layer. The multilayered structure may serve as a front contact for photovoltaic devices.

    Abstract translation: 包括与衬底相邻的第一阻挡层,与第一阻挡层相邻的势垒双层的多层结构,包含第二阻挡层和第三势垒层的阻挡双层,与阻挡层相邻的透明导电氧化物层 双层和与透明导电氧化物层相邻的缓冲层及其形成方法。 一种多层基板,包括具有多个阻挡层的阻挡层结构,所述阻挡层是低折射率材料和高折射率材料的交替层,与所述阻挡双层相邻的透明导电氧化物层和与所述透明导电氧化物相邻的缓冲层 层。 多层结构可以用作光伏器件的前触点。

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