公开(公告)号：WO2008025209A1

公开(公告)日：2008-03-06

申请号：PCT/CN2007/002102

申请日：2007-07-09

Applicant: 安集微电子(上海)有限公司 ,  宋伟红 ,  陈国栋 ,  荆建芬 ,  姚颖 ,  宋成兵

Inventor： 宋伟红 ,  陈国栋 ,  荆建芬 ,  姚颖 ,  宋成兵

IPC: C09G1/02 ,  H01L21/304 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

Abstract: A polishing slurry for low dielectric material is disclosed. It includes abrasive and water, and is characterized in that, it further contains one or more kinds of metal chelating agents, azole-species as film-forming agent and oxidizing agent. Under lower pressure, the present polishing slurry has higher polishing speed on low dielectric material, suitable polishing selectivity for other materials, and better surface finish after polishing.

公开(公告)号：WO2008025208A1

公开(公告)日：2008-03-06

申请号：PCT/CN2007/002101

申请日：2007-07-09

Applicant: 安集微电子(上海)有限公司 ,  陈国栋 ,  宋伟红 ,  荆建芬 ,  宋成兵 ,  杨凯平

Inventor： 陈国栋 ,  宋伟红 ,  荆建芬 ,  宋成兵 ,  杨凯平

IPC: C09G1/02 ,  H01L21/304 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

Abstract: A polishing slurry containing blended abrasives for low dielectric material is disclosed, which includes two or more kinds of polishing abrasives, wherein, one of the abrasives is Al-doped silica, and the second abrasive is the one selected from silica, alumina, alumina -coated silica or zirconia-coated silica or their combinations. The present polishing slurry not only can effectively adjust the polishing speed of low dielectric carbon-doped silica (CDO) and silica, but also can prevent local and throughout corrosion during metal polishing, thus can improve the acceptability. Moreover, it is useful in integrate circuit which contains metal,metal barrier, carbon-doped silica and silica simultaneously.

公开(公告)号：WO2008040183A1

公开(公告)日：2008-04-10

申请号：PCT/CN2007/002808

申请日：2007-09-24

Applicant: 安集微电子(上海)有限公司 ,  荆建芬 ,  宋伟红 ,  陈国栋 ,  姚颖

Inventor： 荆建芬 ,  宋伟红 ,  陈国栋 ,  姚颖

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: A chemical-mechanical polishing liquid for polishing low-dielectric material is disclosed, which comprises abrasive particles, corrosion inhibitor, oxidizer and water, and the characteristic of the liquid is in that further comprises at least one kind of accelerator. The polishing liquid have higher removal rate for low-dielectric material under lower pressure, and also have higher removal rate for other material such as metal copper (Cu), silica (Teos), metal tantalum (Ta)/ tantalum nitride (TaN) barrier and the like.

公开(公告)号：WO2009006784A1

公开(公告)日：2009-01-15

申请号：PCT/CN2008/001259

申请日：2008-07-01

Applicant: 安集微电子(上海)有限公司 ,  陈国栋 ,  宋伟红 ,  姚颖 ,  宋成兵

Inventor： 陈国栋 ,  宋伟红 ,  姚颖 ,  宋成兵

IPC: C01B33/14 ,  C09C1/28 ,  C09C3/12 ,  C09K3/14 ,  C09G1/02

CPC classification number: C09G1/02 ,  C01B33/146 ,  C09C1/3081 ,  C09K3/1454

Abstract: The invention discloses a modified silicon dioxide sol, manufacturing method and use of the same, and a polishing liquid containing the same. The surface of the silicon dioxide of the modified silicon dioxide sol is bonded with epoxy-group-containing silane coupling agent. Modification is performed after mixing the silicon dioxide sol, surfactant and epoxy-group-containing silane coupling agent. Among the modified silicon dioxide sol according to the invention, surfaces of the silicon dioxide particles are grafted with epoxy groups, and on the one hand it can change hydrophilicity of the silicon dioxide particles, and on the other hand it can change the interaction between the silicon dioxide particles and the surfaces of wafer or polishing pad. Due to the improvement of the two properties, it can achieve higher polishing rates of TEOS and BD, and can bring less effect on polishing of Ta and Cu.

公开(公告)号：WO2008011796A1

公开(公告)日：2008-01-31

申请号：PCT/CN2007/002103

申请日：2007-07-09

Applicant: 安集微电子(上海)有限公司 ,  陈国栋 ,  宋伟红 ,  荆建芬 ,  徐春 ,  顾元

Inventor： 陈国栋 ,  宋伟红 ,  荆建芬 ,  徐春 ,  顾元

IPC: G09G1/02 ,  H01L21/304 ,  C09K3/14

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212

Abstract: A polishing slurry including Al-doped silica and water for low dielectric material is disclosed, it is characterized in that, it further contains active micro-molecule materials which are ammonium-ion or quaternary ammonium ion containing compound. The present polishing slurry has promotion on polishing low dielectric material such as CDO and TEOS or SION etc., while it has little effect on polishing speed for Ta and Cu. Thus it can greatly improve the polishing selectivity for substrates. Moreover, the present polishing slurry can greatly decrease the surface defects such as scratch, corrosion, pitting erosion and the like.

公开(公告)号：WO2007137508A1

公开(公告)日：2007-12-06

申请号：PCT/CN2007/001696

申请日：2007-05-24

Applicant: 安集微电子(上海)有限公司 ,  陈国栋 ,  王淑敏 ,  俞昌 ,  宋伟红 ,  顾元

Inventor： 陈国栋 ,  王淑敏 ,  俞昌 ,  宋伟红 ,  顾元

IPC: C09G1/02 ,  H01L21/304 ,  C09K3/14

CPC classification number: H01L21/31053 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: A polishing slurry for subtle surface planarization and its using method are disclosed. The present polishing slurry for subtle surface planarization includes abrasive and water, it is characterized in that the abrasive is a colloidal Al-doped silica abrasive, this colloidal Al-doped silica abrasive is an aqueous dispersion of Al-doped silica. When using the present polishing slurry for subtle surface planarization in CMP process, the downward pressure is 0.5-3psi. The present polishing slurry for subtle surface -planarization can effectively polish Ta, TaN, TEOS, FSG, BD or other lower dielectric material and so on, and the polishing rate for lower dielectric material can be increased by two times, while excellent planarization effect can be obtained.

公开(公告)号：WO2007048316A1

公开(公告)日：2007-05-03

申请号：PCT/CN2006/002620

申请日：2006-10-08

Applicant: 安集微电子(上海)有限公司 ,  宋伟红 ,  陈国栋 ,  顾元 ,  徐春 ,  宋鹰

Inventor： 宋伟红 ,  陈国栋 ,  顾元 ,  徐春 ,  宋鹰

IPC: C09G1/02

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A chemical mechanical polishing paste for tantalum barrier layer is disclosed, which comprises abrasive particles A, abrasive particles B with larger particle size than A, triazoles compound, organic acid and carrier. The present chemical mechanical polishing paste can significantly reduce defect, scratch, contaminant and other residual, and adjust the polishing selectivity for barrier and oxide layers by using different particles size. As a result, it solves the problem of difficultly adjusting the removing rate of two substrate separately, prevents the local and general corrosion during metal polishing, hence increases the acceptable quality level.

公开(公告)号：WO2008144969A1

公开(公告)日：2008-12-04

申请号：PCT/CN2007/002474

申请日：2007-08-16

Applicant: 深圳市大族激光科技股份有限公司 ,  深圳市大族数控科技有限公司 ,  高云峰 ,  严超 ,  张兴泉 ,  陈国栋 ,  曾庆碑

Inventor： 高云峰 ,  严超 ,  张兴泉 ,  陈国栋 ,  曾庆碑

IPC: B23K26/00

CPC classification number: B23K26/0846 ,  B23K2203/42 ,  B23K2203/50

Abstract: A cutting device for a PP sheet (prepreg film) comprises a main frame (2) with a transmitting mechanism, a worktable (1), a feeding mechanism (3) and a controlling system with a display for man and computer intercommunicating. The worktable includes a laser producer (11) and a cutting head (12) for accepting a laser beam to form a cutting beam. A cutting method relating to said device is also disclosed in the invention. Therefore the glue powder and the filaments are avoided from falling off, a roboticized cutting is realized and the cost is deduced.