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公开(公告)号：WO2008025209A1
公开(公告)日：2008-03-06
申请号：PCT/CN2007/002102
申请日：2007-07-09
IPC: C09G1/02 , H01L21/304 , C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
Abstract: A polishing slurry for low dielectric material is disclosed. It includes abrasive and water, and is characterized in that, it further contains one or more kinds of metal chelating agents, azole-species as film-forming agent and oxidizing agent. Under lower pressure, the present polishing slurry has higher polishing speed on low dielectric material, suitable polishing selectivity for other materials, and better surface finish after polishing.
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公开(公告)号：WO2008040183A1
公开(公告)日：2008-04-10
申请号：PCT/CN2007/002808
申请日：2007-09-24
Applicant: 安集微电子(上海)有限公司 , 荆建芬 , 宋伟红 , 陈国栋 , 姚颖
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: A chemical-mechanical polishing liquid for polishing low-dielectric material is disclosed, which comprises abrasive particles, corrosion inhibitor, oxidizer and water, and the characteristic of the liquid is in that further comprises at least one kind of accelerator. The polishing liquid have higher removal rate for low-dielectric material under lower pressure, and also have higher removal rate for other material such as metal copper (Cu), silica (Teos), metal tantalum (Ta)/ tantalum nitride (TaN) barrier and the like.
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公开(公告)号：WO2009006784A1
公开(公告)日：2009-01-15
申请号：PCT/CN2008/001259
申请日：2008-07-01
Applicant: 安集微电子(上海)有限公司 , 陈国栋 , 宋伟红 , 姚颖 , 宋成兵
CPC classification number: C09G1/02 , C01B33/146 , C09C1/3081 , C09K3/1454
Abstract: The invention discloses a modified silicon dioxide sol, manufacturing method and use of the same, and a polishing liquid containing the same. The surface of the silicon dioxide of the modified silicon dioxide sol is bonded with epoxy-group-containing silane coupling agent. Modification is performed after mixing the silicon dioxide sol, surfactant and epoxy-group-containing silane coupling agent. Among the modified silicon dioxide sol according to the invention, surfaces of the silicon dioxide particles are grafted with epoxy groups, and on the one hand it can change hydrophilicity of the silicon dioxide particles, and on the other hand it can change the interaction between the silicon dioxide particles and the surfaces of wafer or polishing pad. Due to the improvement of the two properties, it can achieve higher polishing rates of TEOS and BD, and can bring less effect on polishing of Ta and Cu.
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公开(公告)号：WO2011069343A1
公开(公告)日：2011-06-16
申请号：PCT/CN2010/002032
申请日：2010-12-13
Applicant: 安集微电子(上海)有限公司 , 姚颖 , 宋伟红 , 荆建芬 , 孙展龙
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212
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公开(公告)号：WO2010012159A1
公开(公告)日：2010-02-04
申请号：PCT/CN2009/000863
申请日：2009-08-03
Applicant: 安集微电子(上海)有限公司 , 姚颖 , 宋伟红 , 荆建芬
IPC: C09G1/02 , C09K3/14 , H01L21/304
CPC classification number: H01L21/31053 , C09G1/02 , C09K3/1463
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Patent Agency Ranking
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公开(公告)号：WO2016107406A1
公开(公告)日：2016-07-07
申请号：PCT/CN2015/097542
申请日：2015-12-16
Abstract: 本发明涉及一种化学机械抛光液及其应用，该抛光液含有研磨颗粒、氨基硅烷试剂和水。本发明适合于硅通孔(TSV)工艺中阻挡层的抛光，还可用于集成电路铜互连制程中的阻挡层抛光、二氧化硅层间介质抛光和浅槽隔离层抛光，在较温和的条件下具有高的阻挡层去除速率，较高的平坦化效率。抛光液可制备高浓缩的产品，不但可以有效降低成本，还便于储存和运输。
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公开(公告)号：WO2012051787A1
公开(公告)日：2012-04-26
申请号：PCT/CN2011/001454
申请日：2011-08-29
Applicant: 安集微电子(上海)有限公司 , 宋伟红 , 姚颖
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
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