公开(公告)号：WO1992022925A1

公开(公告)日：1992-12-23

申请号：PCT/US1992005089

申请日：1992-06-17

Applicant: ADVANCED PHOTOVOLTAIC SYSTEMS, INC.

Inventor： ADVANCED PHOTOVOLTAIC SYSTEMS, INC. ,  XI, Jianping ,  GHOSH, Malathi ,  LIU, Tongyu ,  MACNEIL, John

IPC: H01L29/12

CPC classification number: G03G5/08214 ,  H01L29/1604 ,  H01L31/03762 ,  H01L31/03767 ,  H01L31/075 ,  Y02E10/548

Abstract: An amorphous material such as silicon is doped with a dopant, such as boron, in small amounts effective to reduce light-induced degradation. The dopant preferably is added in the vapor deposition of the amorphous material and results in a concentration of less than about 5x10 atoms/cm in a film. The films may be used in applications such as photovoltaic devices, xerography drums, facsimile elements, thin film transistors, and particle detectors.

Abstract translation: 诸如硅之类的无定形材料以少量掺杂有掺杂剂，例如硼，以有效降低光致降解。 掺杂剂优选在无定形材料的气相沉积中加入，并导致膜中小于约5×10 18原子/ cm 3的浓度。 这些膜可以用于诸如光伏器件，静电鼓，传真元件，薄膜晶体管和粒子检测器的应用中。