METHODS FOR FORMING ALUMINUM CONTAINING FILMS UTILIZING AMINO ALUMINUM PRECURSORS
    1.
    发明申请
    METHODS FOR FORMING ALUMINUM CONTAINING FILMS UTILIZING AMINO ALUMINUM PRECURSORS 审中-公开
    使用氨基铝前驱体形成含铝薄膜的方法

    公开(公告)号:WO2004108985A3

    公开(公告)日:2005-06-30

    申请号:PCT/IB2004001642

    申请日:2004-05-19

    Applicant: AIR LIQUIDE

    Abstract: A method of forming an aluminum containing film on a substrate includes providing a precursor having the chemical structure: AI(NR1R2)(NR3R4)(NR5R6); where each of R1, R2, R3, R4, R5 and R6 is independently selected from the group consisting of hydrogen and an alkyl group including at least two carbon atoms. The precursor is utilized to form a film on the substrate including at least one of aluminum oxide, aluminum nitride and aluminum oxy-nitride. Each of the R1 - R6 groups can be the same or different and can by straight or branched chain alkyls. An exemplary precursor that has is useful in forming aluminum containing films is tris diethylamino aluminum.

    Abstract translation: 在基板上形成含铝膜的方法包括提供具有以下化学结构的前体:Al(NR1R2)(NR3R4)(NR5R6); 其中R 1,R 2,R 3,R 4,R 5和R 6各自独立地选自氢和包括至少两个碳原子的烷基。 该前体用于在基底上形成包含氧化铝,氮化铝和氮氧化铝中的至少一种的膜。 每个R 1 -R 6基团可以相同或不同,并且可以通过直链或支链烷基。 可用于形成含铝膜的示例性前体是三乙基氨基铝。

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