公开(公告)号：WO2013093408A1

公开(公告)日：2013-06-27

申请号：PCT/GB2012/052785

申请日：2012-11-09

申请人： AMANTYS LTD

发明人： SNOOK, Mark ,  SHELTON, Edward ,  PARKER, Stephen ,  VIT, Matteo

IPC分类号： H03K17/18 ,  H03K17/082 ,  G08C15/06 ,  H02J13/00

CPC分类号： H03K17/0822 ,  G01R31/327 ,  H01H83/06 ,  H01H83/10 ,  H01H83/20 ,  H02M2001/325 ,  H03K17/0828 ,  H03K17/18

摘要： We describe a fault-tolerant power semiconductor switching device control system (100), the control system comprising: a coordinating control system (110); and a plurality of switching device controllers (120) each coupled to said coordinating control system and each configured to control a respective power semiconductor switching device (130); wherein said coordinating control system is configured to send real time switching control data to said switching device controllers to control switching of said power semiconductor switching devices, and to receive real time acknowledgement data from said switching device controllers; wherein a said switching device controller is configured to receive said real time switching control data from said coordinating control system, to control a said power semiconductor switching device responsive to said real time switching control data, and to provide said real time acknowledgement data confirming said switching device control to said coordinating control system; and wherein said coordinating control system is further configured to control further switching of said power semiconductor switching devices responsive to said real time acknowledgement data.

摘要翻译： 我们描述了容错功率半导体开关器件控制系统（100），该控制系统包括：协调控制系统（110）; 以及多个开关装置控制器（120），每个开关装置控制器（120）分别耦合到所述协调控制系统并且各自被配置为控制相应的功率半导体开关装置（130）; 其中所述协调控制系统被配置为向所述交换设备控制器发送实时切换控制数据，以控制所述功率半导体开关设备的切换，并从所述交换设备控制器接收实时确认数据; 其中所述开关装置控制器被配置为从所述协调控制系统接收所述实时切换控制数据，以响应于所述实时切换控制数据控制所述功率半导体开关装置，并提供确认所述切换的所述实时确认数据 设备控制到所述协调控制系统; 并且其中所述协调控制系统还被配置为响应于所述实时确认数据来控制所述功率半导体开关装置的进一步切换。

公开(公告)号：WO2012120271A1

公开(公告)日：2012-09-13

申请号：PCT/GB2012/050364

申请日：2012-02-17

申请人： AMANTYS LTD ,  PALMER, Patrick ,  HE, Weiwei ,  SNOOK, Mark

发明人： PALMER, Patrick ,  HE, Weiwei ,  SNOOK, Mark

IPC分类号： H03K17/082 ,  H03K17/10

CPC分类号： H03K17/0828 ,  H03K17/107 ,  H03K17/166

摘要： This invention generally relates to voltage balancing among series - connected power switching devices comprising one or more insulated gate bipolar transistor (IGBT), and more particularly to a method controlling sharing of voltage among series - connected power switching devices, wherein at least one said device is an insulated gate bipolar transistor (IGBT), the method comprising: controlling the IGBT dependent on a reference signal (Vref) and collector or emitter voltage of the IGBT such that during an off period of said IGBT said reference signal limits an absolute value of collector-emitter voltage of said IGBT to be within a range; and control to temporarily change during said limiting said reference signal from an initial value (Vclamp) to a temporary clamp value (Vtemporal clamp) to reduce said range, said change when each of said devices is in a substantially non-conducting state (off).

摘要翻译： 本发明一般涉及包括一个或多个绝缘栅双极晶体管（IGBT）的串联功率开关器件之间的电压平衡，更具体地说，涉及一种控制串联功率开关器件之间的电压共享的方法，其中至少一个所述器件 是一种绝缘栅双极晶体管（IGBT），该方法包括：根据IGBT的参考信号（Vref）和集电极或发射极电压来控制IGBT，使得在所述IGBT的断开期间，所述参考信号限制绝对值 所述IGBT的集电极 - 发射极电压在一个范围内; 以及控制以在将所述参考信号从初始值（Vclamp）限制到临时钳位值（Vtemporal钳位）期间暂时改变以减小所述范围，当每个所述装置处于基本不导通状态（关闭）时所述变化， 。

公开(公告)号：WO2015001311A1

公开(公告)日：2015-01-08

申请号：PCT/GB2014/051850

申请日：2014-06-17

申请人： AMANTYS LTD

发明人： LYLE, Robin ,  SNOOK, Mark ,  LEEDHAM, Robert, John

IPC分类号： H03K17/12 ,  H02M1/088

CPC分类号： H02M1/088 ,  H03K17/127 ,  H03K17/28

摘要： The invention generally relates to methods and circuits for controlling switching of parallel coupled power semiconductor switching devices (3), for example for use in a power converter. In an example, there is provided a circuit for controlling switching of parallel coupled power semiconductor switching devices (3), the circuit comprising: a plurality of drive modules (2), each said module for controlling a said power semiconductor switching device (3); control circuitry to transmit switch command signals to the modules, each said switch command signal to trigger a said drive module to control a said power semiconductor switching device to switch state; and voltage isolation between the drive modules and the control circuitry, wherein each said drive module for controlling a said device comprises: timing circuitry (22) to compare a switching delay of the device and a reference delay, wherein said switching delay is a time interval between detecting a said switching command signal at the drive module and switching of the device in accordance with the detected switching command signal; and delay circuitry (21) to provide a controllable delay to delay a said triggering by a said switching command signal received at the module subsequent to the detected switching command signal, the delay circuitry configured to control the controllable delay according to a result of said comparison of said switching delay of the device, to thereby reduce a time difference between the reference delay and a said switching delay of the device switching in accordance with the subsequent switching command signal.

摘要翻译： 本发明一般涉及用于控制并联耦合功率半导体开关器件（3）的开关的方法和电路，例如用于功率转换器。 在一个示例中，提供了一种用于控制并联耦合功率半导体开关器件（3）的开关的电路，该电路包括：多个驱动模块（2），每个所述模块用于控制所述功率半导体开关器件（3） ; 控制电路，用于向所述模块发送开关命令信号，每个所述开关指令信号触发所述驱动模块以控制所述功率半导体开关器件切换状态; 以及驱动模块和控制电路之间的电压隔离，其中用于控制所述装置的每个所述驱动模块包括：用于比较装置的开关延迟和参考延迟的定时电路（22），其中所述开关延迟是时间间隔 在驱动模块检测所述切换命令信号和根据检测到的切换命令信号切换设备之间; 和延迟电路（21），以提供可控制的延迟，以便在检测到的切换命令信号之后，在模块处接收的所述切换命令信号来延迟所述触发，所述延迟电路被配置为根据所述比较的结果来控制可控延迟 的设备的所述切换延迟，从而根据随后的切换命令信号减少参考延迟和设备切换的所述切换延迟之间的时间差。

公开(公告)号：WO2013093418A1

公开(公告)日：2013-06-27

申请号：PCT/GB2012/053023

申请日：2012-12-06

申请人： AMANTYS LTD

发明人： SNOOK, Mark ,  SHELTON, Edward ,  PARKER, Stephen ,  VIT, Matteo

IPC分类号： H02M1/088 ,  H03K17/12 ,  H03K17/10 ,  H03K17/16

CPC分类号： H03K17/16 ,  H02M1/088 ,  H03K17/10 ,  H03K17/107 ,  H03K17/12 ,  H03K17/127 ,  H03K17/163 ,  Y10T307/76

摘要： We describe a system for controlling very large numbers of power semiconductor switching devices (132) to switch in synchronisation. The devices are high power devices, for example carrying hundreds of amps and/or voltages of the order of kilovolts. In outline the system comprises a coordinating control system (110, 120), which communicates with a plurality of switching device controllers (130) to control the devices into a plurality of states including a fully-off state, a saturated-on state, and at least one intermediate state between the fully-off and saturated-on states, synchronising the devices in the at least one intermediate state during switching.

摘要翻译： 我们描述了一种用于控制大量功率半导体开关器件（132）以同步切换的系统。 这些器件是大功率器件，例如承载数百安培和/或大约数量级的电压。 概述地，系统包括协调控制系统（110,120），其与多个交换设备控制器（130）进行通信，以将设备控制成多个状态，包括完全关闭状态，饱和开启状态和 在完全关断状态和饱和开启状态之间的至少一个中间状态，在切换期间使装置处于至少一个中间状态。

公开(公告)号：WO2013093412A1

公开(公告)日：2013-06-27

申请号：PCT/GB2012/052926

申请日：2012-11-28

申请人： AMANTYS LTD

发明人： SNOOK, Mark ,  SHELTON, Edward ,  PARKER, Stephen ,  VIT, Matteo

IPC分类号： H03K17/18 ,  H03K17/082 ,  G08C15/06 ,  H02J13/00 ,  G08C25/02

CPC分类号： H03K17/0822 ,  H02J13/0062 ,  H03K17/18 ,  Y02E60/7838 ,  Y04S40/124

摘要： We describe techniques suitable for communicating switching data in a control system controlling, for example, kilovolts at hundreds of amps. The system comprises a central controller (110) coupled to sub - controllers (120) and thence to a plurality of switching device controllers (SDs,130), preferably in a tree - structure, each SD controlling a power semiconductor switching device such as an IGBT. The method includes formatting switching control data as one or more switching control data packets comprising data for controlling switching of a combination of the devices, sending these from the central controller to the switching device controllers, at the SDs formatting state data representing states of the switching devices controlled in combination into a plurality of acknowledgement data packets, and sending these back to the central controller. The techniques may be employed for controlling the synchronised switching of, potentially, tens, hundreds or thousands of power semiconductor switching devices.

摘要翻译： 我们描述适用于在控制例如以数百安培的千伏的控制系统中传送切换数据的技术。 该系统包括一个中央控制器（110），其耦合到子控制器（120），然后耦合到多个交换设备控制器（SD，130），优选地以树形结构，每个SD控制功率半导体开关器件，例如 IGBT。 该方法包括将切换控制数据格式化为一个或多个切换控制数据分组，其包括用于控制设备的组合的切换的数据，其中以这些数据的形式将它们从中央控制器发送到交换设备控制器，以SD表示切换状态的格式化状态数据 设备被组合成多个确认数据分组，并将它们发送回中央控制器。 这些技术可以用于控制，潜在地，数十，数百或数千个功率半导体开关器件的同步切换。

公开(公告)号：WO2013093410A1

公开(公告)日：2013-06-27

申请号：PCT/GB2012/052859

申请日：2012-11-19

申请人： AMANTYS LTD

发明人： SHELTON, Edward ,  SNOOK, Mark

IPC分类号： H03K17/18 ,  H03K17/082 ,  G08C15/06 ,  H02J13/00 ,  G08C25/02 ,  H03K17/12 ,  H03K17/10 ,  H03K17/16

CPC分类号： H03K3/012 ,  H03K3/013 ,  H03K17/063 ,  H03K17/0822 ,  H03K17/0828 ,  H03K17/107 ,  H03K17/127 ,  H03K17/166 ,  H03K17/168 ,  H03K17/18

摘要： We describe a controller (130) for controlling a power semiconductor switching device (132) into a selected one of a plurality of states, the states including a fully-off state, a saturated-on state, and at least one intermediate state. The switching device controller includes a voltage sense input (142) to sense a voltage on the device; a current sense input (current feedback) to sense a current passing through the device; a negative feedback control circuit (138) coupled to the sense inputs, a control output (136) to provide to the power semiconductor switching device a drive signal with a response dependent on one or more adjustable parameters; and a circuit controller (140) to control the adjustable parameters responsive to state command data, to control the switching device into a selected state, in particular by controlling an effective resistance of the device. Preferred intermediate states include an active low current state and an active low voltage state.

摘要翻译： 我们描述一种用于将功率半导体开关器件（132）控制成多个状态中所选择的一个状态的控制器（130），该状态包括完全关断状态，饱和开启状态和至少一个中间状态。 所述开关装置控制器包括用于感测所述装置上的电压的电压检测输入端（142） 电流感测输入（电流反馈），用于感测通过设备的电流; 耦合到感测输入的负反馈控制电路（138），控制输出（136），以向功率半导体开关装置提供具有取决于一个或多个可调节参数的响应的驱动信号; 以及响应于状态命令数据来控制可调节参数的电路控制器（140），特别是通过控制器件的有效电阻来控制开关器件进入选择状态。 优选的中间状态包括有源低电流状态和有效低电压状态。