公开(公告)号：WO1997008738A2

公开(公告)日：1997-03-06

申请号：PCT/US1996013437

申请日：1996-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： APPLIED MATERIALS, INC. ,  PLAVIDAL, Richard, W. ,  PAN, Shaoher

IPC: H01L00/00

CPC classification number: H01J37/32623 ,  H01J37/3266 ,  H01J2237/3341 ,  H01J2237/3344

Abstract: The present invention is embodied in a plasma reactor for processing a workpiece such as a semiconductor wafer having an axis of symmetry, the reactor including a reactor chamber with a ceiling having an upwardly extending annular pocket bounded by a pair of circumferential side walls, a pedestal for supporting the workpiece within the chamber under the ceiling, a processing gas supply inlet into the chamber, an RF plasma power source coupled to the pedestal, and a magnetic field source near the ceiling providing a radially symmetrical magnetic field having a magnetic pole of one type facing said inner circumferential wall and a magnetic pole of the opposite type facing said outer circumferential wall so as to apply a magnetic field generally straight across said annular pocket. The straight magnetic field lines of the radially symmetrical magnetic field are generally confined to the annular pocket, penetrating into the chamber to a very shallow depth, if at all, and the height of the ceiling above the workpiece exceeds the magnetic field penetration depth.

Abstract translation: 本发明体现在用于处理诸如具有对称轴的半导体晶片的工件的等离子体反应器中，该反应器包括具有天花板的反应室，该天花板具有由一对周向侧壁限定的向上延伸的环形袋，基座 用于将工件支撑在天花板下的腔室内，处理气体供应入口进入腔室，耦合到基座的RF等离子体电源和靠近天花板的磁场源，提供具有一个磁极的径向对称磁场 面对所述内圆周壁的相对面的磁极和面向所述外周壁的相反类型的磁极，以便施加大致直线穿过所述环形凹部的磁场。 径向对称磁场的直线磁场线通常被限制在环形凹穴中，如果有的话，穿透室内的深度非常浅，并且工件上方的天花板的高度超过磁场穿透深度。

公开(公告)号：WO1995020838A1

公开(公告)日：1995-08-03

申请号：PCT/US1995001355

申请日：1995-01-31

Applicant: APPLIED MATERIALS, INC.

Inventor： APPLIED MATERIALS, INC. ,  SHAMOUILIAN, Shamouil ,  SOMEKH, Sasson ,  LEVINSTEIN, Hyman ,  BIRANG, Manoocher ,  SHERSTINSKY, Semyon ,  CAMERON, John, F.

IPC: H02N13/00

CPC classification number: H01L21/6831 ,  H01L21/6833 ,  H02N13/00

Abstract: An electrostatic chuck (20) for holding a substrate (75) comprises (i) a base (80) having an upper surface (95) with grooves (85) therein, the grooves (85) sized and distributed for holding coolant for cooling a substrate (75), and (ii) a substantially continuous insulator film (45) conformal to the grooves (85) on upper surface (95) of the base (80). The base (80) can be electrically conductive and capable of serving as the electrode (50) of the chuck (20), or the electrode (50) can be embedded in the insulator film (45). The insulator film (45) has a dielectric breakdown strength sufficiently high that when a substrate (75) placed on the chuck (20) and electrically biased with respect to the electrode (50), electrostatic charge accumulates in the substrate (75) and in the electrode (50) forming an electrostatic force that attracts and holds the substrate (75) to the chuck (20). Preferably the chuck (20) is fabricated using a pressure forming process, and more preferably using a pressure differential process.

Abstract translation: 用于保持基板（75）的静电卡盘（20）包括（i）具有在其中具有凹槽（85）的上表面（95）的基部（80），所述凹槽（85）的尺寸和分布以保持用于冷却的冷却剂 衬底（75），和（ii）与基座（80）的上表面（95）上的凹槽（85）共形的基本上连续的绝缘膜（45）。 基座（80）可以是导电的并且能够用作卡盘（20）的电极（50），或者电极（50）可以嵌入绝缘膜（45）中。 绝缘体膜（45）具有足够高的绝缘击穿强度，当放置在卡盘（20）上并相对于电极（50）电偏置的基板（75）时，静电电荷积聚在基板（75）中 所述电极（50）形成吸引并保持所述基板（75）到所述卡盘（20）的静电力。 优选地，使用压力成形方法制造卡盘（20），更优选使用压差法。

公开(公告)号：WO1997034208A1

公开(公告)日：1997-09-18

申请号：PCT/US1997003893

申请日：1997-03-11

Applicant: APPLIED MATERIALS, INC.

Inventor： APPLIED MATERIALS, INC. ,  KACZOROWSKI, Edward, M. ,  MANOFSKY, William, L., Jr. ,  WILMER, Michael, E.

IPC: G05D07/06

CPC classification number: G05D7/0635 ,  G01F11/28

Abstract: A method for injecting a specific mass of gas to a specific point of use location uses a cavity (220) with a known volume which is filled with gas. The temperature and pressure of the gas in the cavity (220) are measured to set the conductivity of a control valve (230) located downstream of the cavity (220), after which the gas is released to the point of use location (280). As the gas is released from the cavity, the temperature and pressure of the gas in the cavity (220) changes. Based on the changes in temperature and pressure, the conductivity of the control valve (230) is adjusted to release the specific mass of the gas to the point of use location (280).

Abstract translation: 将特定质量的气体注射到特定使用位置的方法使用具有填充有气体的已知体积的空腔（220）。 测量空腔（220）中的气体的温度和压力，以设定位于空腔（220）下游的控制阀（230）的导电性，然后将气体释放到使用点位置（280） 。 当气体从空腔释放时，空腔（220）中的气体的温度和压力发生变化。 基于温度和压力的变化，调整控制阀（230）的电导率以将气体的特定质量释放到使用地点（280）。

公开(公告)号：WO1997017716A1

公开(公告)日：1997-05-15

申请号：PCT/GB1996002740

申请日：1996-11-08

Applicant: APPLIED MATERIALS, INC. ,  ENGLAND, Jonathan, Gerald ,  MOFFATT, Stephen ,  ARMOUR, David, George ,  FOAD, Majeed

Inventor： APPLIED MATERIALS, INC.

IPC: H01J37/30

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  H01J2237/04756

Abstract: A post mass selection decel lens (9) is located between the exit aperture (55) of the mass selection chamber (47) and the entry (74) to the electron confinement tube (69) of the PFS. The lens comprises a first electrode (65) at the substrate potential, a second electrode (60) at the flight tube potential, and a field electrode (61) between them at a relatively high (negative) potential sufficient to provide focusing of the ion beam at the first electrode. The first electrode is larger than the beam to avoid deflecting ions at the periphery of the aperture out of the beam. The first electrode has an aperture which is smaller than that of the field electrode. The field electrode is at least -5kV relative to the flight tube, that is substantially more than required for electron suppression. Additional apertures are provided between the process chamber and the mass selection chamber to improve evacuation.

Abstract translation: 后质量选择减速透镜（9）位于质量选择室（47）的出口孔（55）和PFS的电子限制管（69）的入口（74）之间。 该透镜包括在基底电位处的第一电极（65），处于飞行管电位的第二电极（60）和位于它们之间的场电极（61），其处于相对高（负）电位，足以提供离子的聚焦 光束在第一电极处。 第一电极大于光束，以避免将光圈外围的离子偏离光束。 第一电极具有小于场电极的孔径。 场电极相对于飞行管至少为-5kV，这大大超过了电子抑制所需要的范围。 在处理室和质量选择室之间提供额外的孔，以改善抽气。

公开(公告)号：WO1996041364A1

公开(公告)日：1996-12-19

申请号：PCT/GB1995001309

申请日：1995-06-07

Applicant: APPLIED MATERIALS, INC. ,  BURGIN, David, R. ,  ENGLAND, Jonathan, G. ,  WAUK, Michael, T. ,  TODAKA, Ryoji

Inventor： APPLIED MATERIALS, INC.

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/3002 ,  H01J2237/31705

Abstract: An ion beam absorbing apparatus for an ion implanter comprises an ion absorber for absorbing ions in an ion beam generated by the ion implanter, and support means for supporting the ion absorber and adapted for connection with the ion implanter, so that when so connected, the ion absorber can intercept the ion beam and absorb ions not intercepted by a target to be implanted with beam ions. The support means is further adapted for supporting the ion absorber in a plurality of different positions which can be selected so that respective different parts of the ion absorber intercept the ion beam.

Abstract translation: 用于离子注入机的离子束吸收装置包括用于吸收由离子注入机产生的离子束中的离子的离子吸收器，以及用于支撑离子吸收器并适于与离子注入机连接的支撑装置，使得当这样连接时， 离子吸收剂可以拦截离子束并吸收未被待离子注入的靶的截留的离子。 支撑装置还适于将离子吸收器支撑在多个不同位置，这些位置可以被选择成使得离子吸收体的各个不同部分截取离子束。

公开(公告)号：WO1994025977A1

公开(公告)日：1994-11-10

申请号：PCT/US1994004652

申请日：1994-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： APPLIED MATERIALS, INC. ,  GHANAYEM, Steve, G.

IPC: H01J37/32

CPC classification number: H01J37/32935

Abstract: A method and apparatus (110) for determining the endpoint (e.g., TC1) of an etching step in a plasma etching process (101) for use in semiconductor wafer manufacturing. In one embodiment, an optical bandpass filter (e.g., 1542) is used for detecting a wavelength of electromagnetic emissions from elements of a chlorine-argon plasma employed to etch a titanium nitride layer from a semiconductor wafer so as to achieve a more precise determination of the endpoint of the process step. In another embodiment, a plurality of wavelengths (e.g., 1541-1544) in the electromagnetic emissions from elements in the plasma are combined for even more precise determination of the endpoint of a process step. The emissions of interest may be from the same or different elements in the plasma which may be produced by the etching materials or by materials from the wafer being etched.

Abstract translation: 一种用于确定用于半导体晶片制造的等离子体蚀刻工艺（101）中的蚀刻步骤的端点（例如，TC1）的方法和装置（110）。 在一个实施例中，光带通滤波器（例如，1542）用于检测来自用于从半导体晶片蚀刻氮化钛层的氯 - 氩等离子体的元件的电磁辐射的波长，以便更准确地确定 流程步骤的终点。 在另一个实施例中，来自等离子体中的元件的电磁发射中的多个波长（例如，1541-1544）被组合以更准确地确定处理步骤的端点。 感兴趣的发射可以来自等离子体中可能由蚀刻材料产生的相同或不同的元素，或来自被蚀刻的晶片的材料。

公开(公告)号：WO1997042648A1

公开(公告)日：1997-11-13

申请号：PCT/US1997008008

申请日：1997-05-08

Applicant: APPLIED MATERIALS, INC.

Inventor： APPLIED MATERIALS, INC. ,  SUBRAMANI, Anantha ,  FORSTER, John ,  STIMSON, Bradley, O. ,  EDELSTEIN, Sergio ,  GRUNES, Howard ,  TEPMAN, Avi ,  XU, Zheng

IPC: H01J37/32

CPC classification number: H01J37/32504 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/34

Abstract: A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.

Abstract translation: 提供了一种用于半导体制造系统中的等离子体室的凹陷线圈。 嵌入线圈减少了材料在线圈上的沉积，这又导致线圈在工件上脱落的颗粒物质的减少。

公开(公告)号：WO1997004474A1

公开(公告)日：1997-02-06

申请号：PCT/GB1996001715

申请日：1996-07-19

Applicant: APPLIED MATERIALS, INC. ,  BURGIN, David, Richard ,  LOOME, David ,  POVALL, Simon

Inventor： APPLIED MATERIALS, INC.

IPC: H01J37/15

CPC classification number: H01J27/022 ,  H01J27/08 ,  H01J37/08 ,  H01J37/15 ,  H01J2237/31701

Abstract: An ion beam apparatus comprises a source of ions (1), an evacuatable chamber (11), first and second electrodes (3, 5) disposed within the chamber for forming an ion beam from ions from the ion source, the first electrode being electrically insulated from the second electrode. At least one insulating member (31, 33), at least part of which is within the chamber provides the insulation, wherein a part of the insulating member is positioned adjacent the wall of the chamber. Alternatively, means for feeding coolant proximate the insulating member is provided to withdraw heat from the insulating member.

Abstract translation: 离子束装置包括离子源（1），可抽空室（11），设置在室内的第一和第二电极（3,5），用于从离子源的离子形成离子束，第一电极是电 与第二电极绝缘。 至少一个绝缘构件（31,33）至少一部分位于室内，提供绝缘，其中绝缘构件的一部分邻近室的壁定位。 或者，提供用于在绝缘构件附近供给冷却剂的装置，以从绝缘构件中提取热量。

公开(公告)号：WO1995032315A1

公开(公告)日：1995-11-30

申请号：PCT/US1995006242

申请日：1995-05-15

Applicant: APPLIED MATERIALS, INC.

Inventor： APPLIED MATERIALS, INC. ,  YIN, Gerald, Zheyao ,  HANAWA, Hiroji ,  SMYTH, Kenneth

IPC: C23C16/00

CPC classification number: H01J37/32091 ,  H01J37/32165 ,  H01J37/32678

Abstract: Plasma generation apparatus, and a related method for its operation, for producing a uniform high-density plasma with good process control and process repeatability. The apparatus includes multipe side electrodes (62.1, 62.6) to which first radio-frequency (rf) power source (57) is connected to provide a transverse electric field for plasma generation, and a pair of convention, upper and lower, electrodes (50, 52) to which a second rf power source (61) is connected to provide separate control of the plasma energy as used in a process such as dry etching. In addition, a magnetic field coil (60) provides a magnetic field perpendicular to the transverse electric field, for enhancement of plasma generation. Because the plasma is generated by a relatively lower frequency (50-200 MHz) power source, as compared with a microwave power source, the magnetic field strength needed to achieve magnetically enhanced operation at or near the electrom cyclotron resonance (ECR) condition is well under 100 gauss, which can be provided at relatively low cost. Moreover, the apparatus can be operated efficiently over a relatively wide range of chamber pressures. Ideally, the number of side electrodes used for plasma generation should be four or six, with each electrode receiving a phase delayed signal as compared with an adjacent electrode, to produce a rotating electric field that further enhances uniformity of plasma formation.

Abstract translation: 等离子体发生装置及其操作的相关方法，用于生产均匀的高密度等离子体，具有良好的工艺控制和工艺重复性。 该装置包括第一射频（RF）电源（57）连接到其上以提供用于等离子体产生的横向电场的多电极侧电极（62.1,62.6）和一对常规的上下电极（50 ，52），第二射频电源（61）连接到所述第二射频电源（61），以提供如在诸如干蚀刻的过程中使用的等离子体能量的单独控制。 此外，磁场线圈（60）提供垂直于横向电场的磁场，用于增强等离子体产生。 由于与微波功率源相比，由相对较低频率（50-200MHz）的电源产生等离子体，所以在电磁回旋共振（ECR）条件下或附近实现磁增强操作所需的磁场强度很好 低于100高斯，可以以相对较低的成本提供。 此外，该设备可以在较大范围的腔室压力下有效地操作。 理想地，用于等离子体生成的侧电极的数量应为四或六，每个电极与相邻电极相比接收相位延迟信号，以产生进一步增强等离子体形成均匀性的旋转电场。

公开(公告)号：WO1995022171A2

公开(公告)日：1995-08-17

申请号：PCT/US1995001101

申请日：1995-01-27

Applicant: APPLIED MATERIALS, INC.

Inventor： APPLIED MATERIALS, INC. ,  CHEN, Jian ,  HSIEH, Peter ,  ISH-SHALOM, Carmel ,  LAU, Wesley ,  PAPANU, James, S. ,  MAK, Steve, S., Y. ,  RHOADES, Charles, Steven ,  SHIEH, Brian ,  LATCHFORD, Scott, Ian ,  WILLIAMS, Karen, A. ,  YU-WANG, Victoria

IPC: H01L21/311

CPC classification number: H01L21/02071 ,  H01L21/31138 ,  H01L21/6831

Abstract: A process for passivating etchant byproducts (24) on a substrate (20) is described. In the process, the substrate (20) is placed into a vacuum chamber (52), and a process gas comprising water vapor, oxygen, and nitrogen, the ratio by volume of (i) water vapor to (ii) oxygen and nitrogen together being either (i) from about 2:1 to about 1:2, or (ii) from about 1:4 to 1:40, is introduced into the vacuum chamber (52). The etchant byproducts (24) on the substrate (20) are passivated by generating a plasma from the process gas. Corrosion of the substrate can be further inhibited by exposing the substrate (20) to an amine vapor comprising (I), wherein R1 is an alkyl group, and each of R2 and R3, which may be the same or different, is a hydrogen atom or an alkyl group, so that amine adsorbs onto the substrate (20) forming a corrosion inhibition amine layer on the surface of the substrate (20).

Abstract translation: 描述了在衬底（20）上钝化蚀刻剂副产物（24）的方法。 在该过程中，将衬底（20）放置在真空室（52）中，并且包括水蒸气，氧气和氮气的处理气体，（i）水蒸气与（ii）氧气和氮气的体积比 （i）约2:1至约1:2，或（ii）约1:4至1:40，被引入真空室（52）。 通过从工艺气体中产生等离子体来钝化衬底（20）上的蚀刻剂副产物（24）。 通过将底物（20）暴露于包含（I）的胺蒸气，其中R 1为烷基，并且可以相同或不同的R 2和R 3各自为氢原子，可以进一步抑制基材的腐蚀 或烷基，使得胺在衬底（20）的表面上吸附到形成腐蚀抑制胺层的衬底（20）上。