Abstract:
A magnetron scanning and support mechanism in which the magnetron (326) is partially supported from an a support plate (268) in overhead scanning mechanism through multiple springs (330) coupled to different horizontal locations on the magnetron and partially supported from below on sliders or rollers (282) at multiple locations on the target. In one embodiment, the yoke plate is continuous and uniform, hi another embodiment, the magnetron's magnetic yoke is divided into two flexible yokes (220, 224), for example, of complementary serpentine shape and each supporting magnets of respective polarity. In another embodiment, the target and magnetron are divided into respective strips (262, 264) separated by other structure. Each magnetron strip is supported partially from above from a common scanning plate and partially on a respective target strip. A centering mechanism (350, 358, 362, 368) may align the different magnetron strips.
Abstract:
The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.
Abstract:
RF power is coupled with different phase offsets to different RF connection points (31- 34) on an electrode (20-26) of a plasma chamber. Preferably, the number of different RF connection points and corresponding phase offsets is at least four, and the positions of the RF connection points are distributed along two orthogonal dimensions (for example, X and Y axes) of the electrode. Preferably, power to each respective RF connection point is supplied by a respective RF power supply (41-44), wherein each power supply synchronizes its phase to a common reference RF oscillator (70).
Abstract:
A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.