公开(公告)号：WO2013173034A1

公开(公告)日：2013-11-21

申请号：PCT/US2013/038111

申请日：2013-04-25

Applicant: APPLIED MATERIALS, INC.

Inventor： SUI, Zhifeng ,  ARMACOST, Michael D. ,  STOUT, Phillip ,  LIAN, Lei ,  PATZ, Ryan

IPC: H01L21/66

CPC classification number: H01L22/10 ,  H01J37/32963 ,  H01J37/32972

Abstract: Methods and apparatus for semiconductor manufacturing process monitoring and control are provided herein. In some embodiments, apparatus for substrate processing may include a process chamber for processing a substrate in an inner volume of the process chamber; a radiation source disposed outside of the process chamber to provide radiation at a frequency of about 200 GHz to about 2 THz into the inner volume via a dielectric window in a wall of the vacuum process chamber; a detector to detect the signal after having passed through the inner volume; and a controller coupled to the detector and configured to determine the composition of species within the inner volume based upon the detected signal.

Abstract translation: 本文提供了用于半导体制造过程监控和控制的方法和装置。 在一些实施例中，用于衬底处理的装置可以包括用于处理处理室的内部容积中的衬底的处理室; 辐射源，其设置在所述处理室的外部，以通过所述真空处理室的壁中的电介质窗口向所述内部体积提供频率为约200GHz至约2THz的辐射; 检测器，用于在通过内部体积之后检测信号; 以及耦合到所述检测器并被配置为基于所检测到的信号来确定所述内部体积内的物种的组成的控制器。

公开(公告)号：WO2011133349A2

公开(公告)日：2011-10-27

申请号：PCT/US2011/031893

申请日：2011-04-11

Applicant: APPLIED MATERIALS, INC. ,  ZHOU, Yifeng ,  ZHOU, Qingjun ,  PATZ, Ryan ,  PENDER, Jeremiah T. ,  ARMACOST, Michael D.

Inventor： ZHOU, Yifeng ,  ZHOU, Qingjun ,  PATZ, Ryan ,  PENDER, Jeremiah T. ,  ARMACOST, Michael D.

IPC: H01L21/3065 ,  H01L21/027

CPC classification number: H01L21/31116

Abstract: Methods for etching silicon-based antireflective layers are provided herein. In some embodiments, a method of etching a silicon-based antireflective layer may include providing to a process chamber a substrate having a multiple-layer resist thereon, the multiple-layer resist comprising a patterned photoresist layer defining features to be etched into the substrate disposed above a silicon-based antireflective coating; and etching the silicon-based antireflective layer through the patterned photoresist layer using a plasma formed from a process gas having a primary reactive agent comprising a chlorine-containing gas. In some embodiments, the chlorine-containing gas is chlorine (Cl 2 ).

Abstract translation: 本文提供了蚀刻硅基抗反射层的方法。 在一些实施例中，蚀刻硅基抗反射层的方法可以包括向处理室提供其上具有多层抗蚀剂的衬底，所述多层抗蚀剂包括限定要被蚀刻到衬底中的特征的图案化光致抗蚀剂层 在硅基抗反射涂层之上; 以及使用由具有包含含氯气体的初级反应剂的工艺气体形成的等离子体，通过图案化的光致抗蚀剂层蚀刻硅基抗反射层。 在一些实施方案中，含氯气体是氯（Cl 2）。

公开(公告)号：WO2022016011A1

公开(公告)日：2022-01-20

申请号：PCT/US2021/041885

申请日：2021-07-15

Applicant: APPLIED MATERIALS, INC.

Inventor： ISKANDAR, Jimmy ,  ARMACOST, Michael D.

IPC: G05B23/02 ,  G05B19/418 ,  H01L21/67 ,  G06K9/627 ,  G06K9/6284 ,  G06K9/6289 ,  G06K9/6298 ,  G06N3/04

Abstract: Implementations disclosed describe a method and a system to perform the method of obtaining a reduced representation of a plurality of sensor statistics representative of data collected by a plurality of sensors associated with a device manufacturing system performing a manufacturing operation. The method further includes generating, using a plurality of outlier detection models, a plurality of outlier scores, each of the plurality of outlier scores generated based on the reduced representation of the plurality of sensor statistics using a respective one of the plurality of outlier detection models. The method further includes processing the plurality of outlier scores using a detector neural network to generate an anomaly score indicative of a likelihood of an anomaly associated with the manufacturing operation.