公开(公告)号：WO2015061030A1

公开(公告)日：2015-04-30

申请号：PCT/US2014/059434

申请日：2014-10-07

Applicant: APPLIED MATERIALS, INC.

Inventor： HE, Jim Zhongyi ,  HSIEH, Ping Han ,  HON, Melitta Manyin ,  YAN, Chun ,  HUA, Xuefeng

IPC: H01L21/205 ,  H01L21/265 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02057 ,  H01L21/32132 ,  H01L21/32137

Abstract: Methods for surface interface engineering in semiconductor fabrication are provided herein. In some embodiments, a method of processing a substrate disposed atop a substrate support in a processing volume of a processing chamber includes: generating an ion species from an inductively coupled plasma formed within the processing volume of the processing chamber from a first process gas; exposing a first layer of the substrate to the ion species to form an ammonium fluoride (NH 4 F) film atop the first layer, wherein the first layer comprises silicon oxide; and heating the substrate to a second temperature at which the ammonium fluoride film reacts with the first layer to selectively etch the silicon oxide.

Abstract translation: 本文提供半导体制造中表面界面工程的方法。 在一些实施例中，处理设置在处理室的处理体积中的衬底支撑件顶部的衬底的方法包括：从第一工艺气体产生来自处理室的处理容积内的感应耦合等离子体的离子物质; 将所述衬底的第一层暴露于所述离子种类以在所述第一层顶部形成氟化铵（NH 4 F）膜，其中所述第一层包含氧化硅; 以及将所述衬底加热至所述氟化铵膜与所述第一层反应的第二温度以选择性地蚀刻所述氧化硅。

公开(公告)号：WO2017106089A1

公开(公告)日：2017-06-22

申请号：PCT/US2016/066130

申请日：2016-12-12

Applicant: APPLIED MATERIALS, INC.

Inventor： STONE, Peter ,  OLSEN, Christopher S. ,  KUO, Teng-Fang ,  HSIEH, Ping Han ,  DING, Zhenwen

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/02057 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3065 ,  H01L21/3221 ,  H01L21/6719 ,  H01L21/68742

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.

Abstract translation: 本公开的实施方式一般涉及用于在衬底表面上进行外延沉积的方法和设备。 更具体地，本公开的实施方式一般涉及在外延沉积之前用于表面准备的方法和装置。 在一个实施方式中，提供了一种处理基板的方法。 该方法包括通过使用等离子体蚀刻工艺蚀刻含硅衬底的表面以形成含硅衬底的蚀刻表面并在含硅衬底的蚀刻表面上形成外延层。 等离子体蚀刻工艺包括使包含含氟前体和含氢前体的蚀刻剂气体混合物流入第一处理室的衬底处理区域并且由流入衬底处理区域的蚀刻剂气体混合物形成等离子体。

公开(公告)号：WO2017053126A1

公开(公告)日：2017-03-30

申请号：PCT/US2016/051487

申请日：2016-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： OLSEN, Christopher S. ,  STONE, Peter ,  KUO, Teng-Fang ,  HSIEH, Ping Han ,  VELLAIKAL, Manoj

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract translation: 本公开的实施方式一般涉及用于在衬底表面上进行外延沉积的方法和装置。 更具体地，本公开的实施方案一般涉及在外延沉积之前用于表面制备的方法和装置。 在一个实施方式中，提供了一种处理衬底的方法。 该方法包括通过使用等离子体蚀刻工艺来蚀刻含硅衬底的表面，其中在等离子体蚀刻工艺期间使用包含氯气和惰性气体的至少一种蚀刻工艺气体，并且在等离子体蚀刻工艺的表面上形成外延层 含硅衬底。