公开(公告)号：WO2022005703A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/036188

申请日：2021-06-07

Applicant: APPLIED MATERIALS, INC.

Inventor： HSU, Jui-Yuan ,  MANNA, Pramit ,  JANAKIRAMAN, Karthik

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/31144 ,  H01L29/66227

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing nitrogen-doped diamond-like carbon films for patterning applications. In one or more embodiments, a method for processing a substrate includes flowing a deposition gas containing a hydrocarbon compound and a nitrogen dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, and generating a plasma at or above the substrate by applying a first RF bias to the electrostatic chuck to deposit a nitrogen- doped diamond-like carbon film on the substrate. The nitrogen-doped diamond-like carbon film has a density of greater than 1.5 g/cc and a compressive stress of about -20 MPa to less than -600 MPa.

公开(公告)号：WO2022005704A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/036195

申请日：2021-06-07

Applicant: APPLIED MATERIALS, INC.

Inventor： HSU, Jui-Yuan ,  MANNA, Pramit ,  JANAKIRAMAN, Karthik

IPC: H01L21/02 ,  H01L21/308 ,  C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide methods for producing reduced-stress diamond-like carbon films for patterning applications. In one or more embodiments, a method includes flowing a deposition gas containing a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck and generating a plasma above the substrate in the processing volume by applying a first RF bias to the electrostatic chuck to deposit a stressed diamond-like carbon film on the substrate. The stressed diamond-like carbon film has a compressive stress of -500 MPa or greater. The method further includes heating the stressed diamond-like carbon film to produce a reduced-stress diamond-like carbon film during a thermal annealing process. The reduced-stress diamond-like carbon film has a compressive stress of less than -500 MPa.

公开(公告)号：WO2022086708A1

公开(公告)日：2022-04-28

申请号：PCT/US2021/053832

申请日：2021-10-06

Applicant: APPLIED MATERIALS, INC.

Inventor： HSU, Jui-Yuan ,  NITTALA, Krishna ,  MANNA, Pramit ,  JANAKIRAMAN, Karthik

IPC: C23C16/26 ,  C23C16/02 ,  C23C16/505 ,  C23C16/458 ,  H01L21/02 ,  H01L21/311

Abstract: Embodiments of the present disclosure generally relate to hardmasks and to processes for forming hardmasks by plasma-enhanced chemical vapor deposition (PECVD). In an embodiment, a process for forming a hardmask layer on a substrate is provided. The process includes introducing a substrate to a processing volume of a PECVD chamber, the substrate on a substrate support, the substrate support comprising an electrostatic chuck, and flowing a process gas into the processing volume within the PECVD chamber, the process gas comprising a carbon-containing gas. The process further includes forming, under plasma conditions, an energized process gas from the process gas in the processing volume, electrostatically chucking the substrate to the substrate support, depositing a first carbon-containing layer on the substrate while electrostatically chucking the substrate, and forming the hardmask layer by depositing a second carbon-containing layer on the substrate.

公开(公告)号：WO2023003716A1

公开(公告)日：2023-01-26

申请号：PCT/US2022/036687

申请日：2022-07-11

Applicant: APPLIED MATERIALS, INC.

Inventor： HSU, Jui-Yuan ,  MANNA, Pramit ,  JANAKIRAMAN, Karthik

IPC: H01J37/32 ,  C23C16/505

Abstract: Embodiments of the present disclosure generally relate to methods, apparatus, and systems for maintaining film modulus within a predetermined modulus range. In one implementation, a method of processing substrates includes introducing one or more processing gases to a processing volume of a processing chamber, and depositing a film on a substrate supported on a substrate support disposed in the processing volume. The method includes supplying simultaneously a first radiofrequency (RF) power and a second RF power to one or more bias electrodes of the substrate support. The first RF power includes a first RF frequency and the second RF power includes a second RF frequency that is less than the first RF frequency. A modulus of the film is maintained within a predetermined modulus range.

公开(公告)号：WO2022086707A1

公开(公告)日：2022-04-28

申请号：PCT/US2021/053826

申请日：2021-10-06

Applicant: APPLIED MATERIALS, INC.

Inventor： HSU, Jui-Yuan ,  KUMAR, Bhaskar ,  JANAKIRAMAN, Karthik ,  MANNA, Pramit

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/56 ,  C23C16/505 ,  H01L21/033

Abstract: Embodiments of the present disclosure generally relate to methods of forming hardmasks. Embodiments described herein enable, e.g., formation of carbon-containing hardmasks having reduced film stress. In an embodiment, a method of processing a substrate is provided. The method includes positioning a substrate in a processing volume of a processing chamber and depositing a diamond-like carbon (DLC) layer on the substrate. After depositing the DLC layer, the film stress is reduced by performing a plasma treatment, wherein the plasma treatment comprises applying a radio frequency (RF) bias power of about 100 W to about 10,000 W.