公开(公告)号：WO2022031614A1

公开(公告)日：2022-02-10

申请号：PCT/US2021/044217

申请日：2021-08-02

Applicant: APPLIED MATERIALS, INC.

Inventor： SUN, Jennifer Y. ,  DUAN, Ren-Guan ,  NATU, Gayatri ,  KIM, Tae Won ,  HUANG, Jiyong ,  DEEPAK, Nitin ,  BRILLHART, Paul ,  ZHANG, Lin ,  CHEN, Yikai ,  SEPPÄLÄ, Sanni Sinikka ,  BALASUBRAMANIAN, Ganesh ,  ROCHA, JuanCarlos ,  VENKATARAMAN, Shankar ,  WOO, Katherine Elizabeth

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/30 ,  C23C16/4404 ,  C23C16/45529 ,  H01J37/32495

Abstract: Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a protective coating that includes at least one metal fluoride having a formula selected from the group consisting of M1xFw, M1xM2yFw and M1xM2yM3zFw, where at least one of M1, M2, or M3 is magnesium or lanthanum. The protective coating can be deposited by atomic layer deposition, chemical vapor deposition, electron beam ion assisted deposition, or physical vapor deposition.

公开(公告)号：WO2022178046A1

公开(公告)日：2022-08-25

申请号：PCT/US2022/016682

申请日：2022-02-17

Applicant: APPLIED MATERIALS, INC.

Inventor： DEEPAK, Nitin ,  NATU, Gayatri ,  HICKS, Albert Barrett ,  GORADIA, Prerna Sonthalia ,  SUN, Jennifer Y.

IPC: C23C16/455 ,  C23C16/30

Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.

公开(公告)号：WO2022235536A1

公开(公告)日：2022-11-10

申请号：PCT/US2022/027207

申请日：2022-05-02

Applicant: APPLIED MATERIALS, INC.

Inventor： ENMAN, Lisa J. ,  SALY, Mark ,  SEPPAELAE, Sanni ,  NATU, Gayatri

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40

Abstract: Methods and precursors for depositing metal fluoride films on a substrate surface are described. The method includes exposing the substrate surface to a metal precursor and a fluoride precursor. The fluoride precursor is volatile at a temperature in a range of from 20 °C to 200 °C. The metal precursor reacts with the fluoride precursor to form a non-volatile metal fluoride film.

公开(公告)号：WO2021062349A1

公开(公告)日：2021-04-01

申请号：PCT/US2020/053036

申请日：2020-09-28

Applicant: APPLIED MATERIALS, INC.

Inventor： NATU, Gayatri ,  BAJAJ, Geetika ,  GORADIA, Prerna ,  THAKARE, Darshan ,  FENWICK, David ,  HE, XiaoMing ,  SEPPAELAE, Sanni ,  SUN, Jennifer ,  THANU, Rajkumar ,  HUDGENS, Jeffrey ,  MUTHUKAMATCHI, Karuppasamy ,  DHAYALAN, Arun

IPC: H01L21/687 ,  B25J19/00 ,  C23C16/06 ,  C23C16/455 ,  H01L21/677

Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.

公开(公告)号：WO2020180569A1

公开(公告)日：2020-09-10

申请号：PCT/US2020/019954

申请日：2020-02-26

Applicant: APPLIED MATERIALS, INC.

Inventor： DEEPAK, Nitin ,  SETH, Suresh Chand ,  GORADIA, Prerna Sonthalia ,  BAJAJ, Geetika ,  THAKARE, Darshan ,  SUN, Jennifer Y. ,  NATU, Gayatri

IPC: C23C16/455 ,  C23C16/30 ,  C23C16/44 ,  H01J37/32

Abstract: Embodiments described herein provide a method of forming amorphous a fluorinated metal film. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.