SMART DEVICE FABRICATION VIA PRECISION PATTERNING
    1.
    发明申请
    SMART DEVICE FABRICATION VIA PRECISION PATTERNING 审中-公开
    智能装置制造通过精密图案

    公开(公告)号:WO2015069602A1

    公开(公告)日:2015-05-14

    申请号:PCT/US2014/063753

    申请日:2014-11-03

    Abstract: Embodiments involve smart device fabrication for semiconductor processing tools via precision patterning. In one embodiment, a method of manufacturing a semiconductor processing tool component includes providing a substrate of the semiconductor processing tool component, patterning the substrate to form a sensor directly on the substrate, and depositing a top layer over the sensor. The sensor may include, for example, a temperature or strain sensor. The method can also include patterning the substrate to form one or more of: heaters, thermistors, and electrodes on the substrate. In one embodiment, the method involves patterning a surface of the component oriented towards a plasma region inside of the semiconductor processing tool.

    Abstract translation: 实施例涉及通过精密图案化的半导体加工工具的智能装置制造。 在一个实施例中,制造半导体处理工具部件的方法包括提供半导体加工工具部件的基板,图案化基板以在基板上直接形成传感器,以及在传感器上沉积顶层。 传感器可以包括例如温度或应变传感器。 该方法还可以包括图案化衬底以形成衬底上的一个或多个:加热器,热敏电阻和电极。 在一个实施例中,该方法包括图案化部件的表面朝向半导体处理工具内部的等离子体区域。

    CLEANING PROCESS THAT PRECIPITATES YTTRIUM OXY-FLOURIDE
    4.
    发明申请
    CLEANING PROCESS THAT PRECIPITATES YTTRIUM OXY-FLOURIDE 审中-公开
    清洁氧化钇的清洁方法

    公开(公告)号:WO2017171989A1

    公开(公告)日:2017-10-05

    申请号:PCT/US2017/014615

    申请日:2017-01-23

    Abstract: A method includes immersing an article comprising a yttrium based oxide in an acidic cleaning solution comprising water and 1-10 mol% HF acid. A portion of the yttrium based oxide is dissolved by the HF acid. A yttrium based oxy-fluoride is formed based on a reaction between the HF acid and the dissolved portion of the yttrium based. The yttrium based oxy-fluoride is precipitated onto the article over the yttrium based oxide to form a yttrium based oxy-fluoride coating. The acidic cleaning solution may include a yttrium based salt, which may additionally react with the HF acid to form more of the yttrium based oxy-fluoride.

    Abstract translation: 一种方法包括将包含钇基氧化物的制品浸入包含水和1-10摩尔%HF酸的酸性清洁溶液中。 一部分钇基氧化物被HF酸溶解。 基于HF酸和钇基溶解部分之间的反应形成基于钇的氟氧化物。 基于钇的氧氟化物在钇基氧化物上沉淀到制品上以形成钇基氧氟化物涂层。 酸性清洁溶液可以包括基于钇的盐,其可以另外与HF酸反应以形成更多的基于钇的氟氧化物。

    PROTECTIVE METAL OXY-FLUORIDE COATINGS
    5.
    发明申请
    PROTECTIVE METAL OXY-FLUORIDE COATINGS 审中-公开
    防护金属氟氧化物涂层

    公开(公告)号:WO2017192622A1

    公开(公告)日:2017-11-09

    申请号:PCT/US2017/030690

    申请日:2017-05-02

    Abstract: An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of M x O y F z , where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

    Abstract translation: 物品包括具有保护涂层的主体。 保护涂层是包含金属氟氧化物的薄膜。 该金属氟氧化物具有经验式M×M×O×Y F Z,其中M是金属,y的值为0.1 到x的1.9倍,z的值是x的0.1到3.9倍。 保护层的厚度为1至30微米,孔隙率小于0.1%。

    COATING FOR CHAMBER PARTICLE REDUCTION
    8.
    发明申请

    公开(公告)号:WO2021025849A1

    公开(公告)日:2021-02-11

    申请号:PCT/US2020/042582

    申请日:2020-07-17

    Abstract: Embodiments of the present disclosure generally relate to a chamber component to be used in plasma processing chambers for semiconductor or display processing. In one embodiment, a chamber component includes a textured surface having a surface roughness ranging from about (150) microinches to about (450) microinches and a coating layer disposed on the textured surface. The coating layer may be a silicon layer having a purity ranging from about (90) weight percent to about (99) weight percent, a thickness ranging from about (50) microns to about (500) microns, and an electrical resistivity ranging from about 1 E-3 ohm*m to about 1E3 ohm*m. The coating layer provides strong adhesion for materials deposited in the plasma processing chamber, which reduces the materials peeling from the chamber component. The coating layer also enables oxygen plasma cleaning for further reducing materials deposited on the chamber component and provides the protection of the textured surface located therebelow.

    PLASMA SPRAY COATING DESIGN USING PHASE AND STRESS CONTROL
    9.
    发明申请
    PLASMA SPRAY COATING DESIGN USING PHASE AND STRESS CONTROL 审中-公开
    使用相位和应力控制的等离子体喷涂设计

    公开(公告)号:WO2015175987A1

    公开(公告)日:2015-11-19

    申请号:PCT/US2015/031172

    申请日:2015-05-15

    Abstract: To manufacture a coating for an article for a semiconductor processing chamber, the article including a body of at least one of Al, AI2O3, or SiC is provided and a ceramic coating is coated on the body, wherein the ceramic coating includes a compound of Y2O3, AI2O3, and Zr02. The ceramic coating is applied to the body by a method including providing a plasma spraying system having a plasma current in the range of between about 100 A to about 1000 A, positioning a torch standoff of the plasma spraying system a distance from the body between about 60 mm and about 250 mm, flowing a first gas through the plasma spraying system at a rate of between about 30 L/min and about 400 L/min, and plasma spray coating the body to form a ceramic coating, wherein splats of the coating are amorphous and have a pancake shape.

    Abstract translation: 为了制造用于半导体处理室的制品的涂层,提供了包括Al,Al 2 O 3或SiC中的至少一种的本体的制品,并且在主体上涂覆陶瓷涂层,其中陶瓷涂层包括Y 2 O 3的化合物 ,Al 2 O 3和ZrO 2。 通过包括提供等离子体电流在约100A至约1000A之间的等离子体喷涂系统的方法将陶瓷涂层施加到身体上,将等离子喷涂系统的火炬对接定位在距离身体之间的距离在约 60毫米和约250毫米,使第一个气体以约30升/分钟至约400升/分钟的速率流过等离子体喷涂系统,等离子体喷涂涂覆该主体以形成陶瓷涂层,其中涂层 是无定形的,具有薄饼形状。

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