Abstract:
Embodiments involve smart device fabrication for semiconductor processing tools via precision patterning. In one embodiment, a method of manufacturing a semiconductor processing tool component includes providing a substrate of the semiconductor processing tool component, patterning the substrate to form a sensor directly on the substrate, and depositing a top layer over the sensor. The sensor may include, for example, a temperature or strain sensor. The method can also include patterning the substrate to form one or more of: heaters, thermistors, and electrodes on the substrate. In one embodiment, the method involves patterning a surface of the component oriented towards a plasma region inside of the semiconductor processing tool.
Abstract:
Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.
Abstract:
Methods and apparatus for producing bulk silicon carbide and producing silicon carbide coatings are provided herein. The method includes feeding a mixture of silicon carbide and ceramic into a plasma sprayer. The plasma generates a stream towards a substrate forming a bulk material or optionally a coating on the substrate such as an article upon contact therewith. In embodiments, the substrate can be removed, leaving a component part fabricated from bulk silicon carbide.
Abstract:
A method includes immersing an article comprising a yttrium based oxide in an acidic cleaning solution comprising water and 1-10 mol% HF acid. A portion of the yttrium based oxide is dissolved by the HF acid. A yttrium based oxy-fluoride is formed based on a reaction between the HF acid and the dissolved portion of the yttrium based. The yttrium based oxy-fluoride is precipitated onto the article over the yttrium based oxide to form a yttrium based oxy-fluoride coating. The acidic cleaning solution may include a yttrium based salt, which may additionally react with the HF acid to form more of the yttrium based oxy-fluoride.
Abstract:
An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of M x O y F z , where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.
Abstract translation:物品包括具有保护涂层的主体。 保护涂层是包含金属氟氧化物的薄膜。 该金属氟氧化物具有经验式M×M×O×Y F Z,其中M是金属,y的值为0.1 到x的1.9倍,z的值是x的0.1到3.9倍。 保护层的厚度为1至30微米,孔隙率小于0.1%。 p>
Abstract:
Disclosed herein are methods for producing an ultra-dense and ultra-smooth ceramic coating. A method includes feeding a solution comprising a metal precursor into a plasma sprayer. The plasma sprayer generates a stream toward an article, forming a ceramic coating on the article upon contact.
Abstract:
Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a protective coating that includes at least one metal fluoride having a formula selected from the group consisting of M1xFw, M1xM2yFw and M1xM2yM3zFw, where at least one of M1, M2, or M3 is magnesium or lanthanum. The protective coating can be deposited by atomic layer deposition, chemical vapor deposition, electron beam ion assisted deposition, or physical vapor deposition.
Abstract:
Embodiments of the present disclosure generally relate to a chamber component to be used in plasma processing chambers for semiconductor or display processing. In one embodiment, a chamber component includes a textured surface having a surface roughness ranging from about (150) microinches to about (450) microinches and a coating layer disposed on the textured surface. The coating layer may be a silicon layer having a purity ranging from about (90) weight percent to about (99) weight percent, a thickness ranging from about (50) microns to about (500) microns, and an electrical resistivity ranging from about 1 E-3 ohm*m to about 1E3 ohm*m. The coating layer provides strong adhesion for materials deposited in the plasma processing chamber, which reduces the materials peeling from the chamber component. The coating layer also enables oxygen plasma cleaning for further reducing materials deposited on the chamber component and provides the protection of the textured surface located therebelow.
Abstract:
To manufacture a coating for an article for a semiconductor processing chamber, the article including a body of at least one of Al, AI2O3, or SiC is provided and a ceramic coating is coated on the body, wherein the ceramic coating includes a compound of Y2O3, AI2O3, and Zr02. The ceramic coating is applied to the body by a method including providing a plasma spraying system having a plasma current in the range of between about 100 A to about 1000 A, positioning a torch standoff of the plasma spraying system a distance from the body between about 60 mm and about 250 mm, flowing a first gas through the plasma spraying system at a rate of between about 30 L/min and about 400 L/min, and plasma spray coating the body to form a ceramic coating, wherein splats of the coating are amorphous and have a pancake shape.
Abstract translation:为了制造用于半导体处理室的制品的涂层,提供了包括Al,Al 2 O 3或SiC中的至少一种的本体的制品,并且在主体上涂覆陶瓷涂层,其中陶瓷涂层包括Y 2 O 3的化合物 ,Al 2 O 3和ZrO 2。 通过包括提供等离子体电流在约100A至约1000A之间的等离子体喷涂系统的方法将陶瓷涂层施加到身体上,将等离子喷涂系统的火炬对接定位在距离身体之间的距离在约 60毫米和约250毫米,使第一个气体以约30升/分钟至约400升/分钟的速率流过等离子体喷涂系统,等离子体喷涂涂覆该主体以形成陶瓷涂层,其中涂层 是无定形的,具有薄饼形状。
Abstract:
Disclosed herein are methods for producing an ultra-dense and ultra-smooth ceramic coating. A method includes feeding a slurry of ceramic particles into a plasma sprayer. The plasma sprayer generates a stream of particles directed toward the substrate, forming a ceramic coating on the substrate upon contact.