公开(公告)号：WO2017074606A1

公开(公告)日：2017-05-04

申请号：PCT/US2016/052636

申请日：2016-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： MUKHERJEE, Shaunak ,  YIM, Kang Sub ,  PADHI, Deenesh ,  CHO, Kevin M. ,  PHAN, Khoi Anh ,  CHEN, Chien-An ,  DASH, Priyanka

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/205

CPC classification number: H01L21/02164 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/32

Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO 2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO 2 containing layer over the hardmask, the SiO 2 containing layer having very low carbon.

Abstract translation: 描述了硬掩模和ARC层的单一前体沉积方法。 所得膜是具有较高碳含量的SiOC层，其以低碳含量的高密度氧化硅SiO 2层终止。 该方法可包括将第一沉积前体递送至基底，第一沉积前体包含SiOC前体和第一流速的含氧气体; 使用等离子体激活沉积物质，由此在衬底的暴露表面上沉积含有SiOC的层。 然后将第二前体气体递送至含SiOC层，第二沉积气体包含具有第二流速和第二流速的含氧气体的不同或相同SiOC前体，并使用等离子体活化沉积气体，第二沉积气体 在硬掩模上形成包含SiO 2的层，含SiO 2的层具有非常低的碳。