公开(公告)号：WO2015094664A1

公开(公告)日：2015-06-25

申请号：PCT/US2014/068330

申请日：2014-12-03

Applicant: APPLIED MATERIALS, INC.

Inventor： CHEN, Yihong ,  MUKHERJEE, Shaunak ,  CHATTERJEE, Amit ,  MANNA, Pramit ,  MALLICK, Abhijit Basu ,  LIU, Ningli ,  ZHOU, Jianhua ,  ROCHA-ALVAREZ, Juan Carlos ,  SRINIVASAN, Mukund

IPC: C23C16/50

CPC classification number: C23C16/452 ,  H01J37/32357 ,  H01J37/32422

Abstract: One or more precursor gases, such as one or more silicon-containing gases, which may be one or more organosilicon and/or tetraalkyl orthosilicate gases, are introduced into a processing chamber and exposed to radicals. Dielectric films deposited using the techniques disclosed herein may contain silicon. The deposited films may exhibit few defects, low shrinkage, and high etch selectivity, mechanical stability, and thermal stability. In some embodiments, the deposited film can be hydrogen free. The deposition conditions can be very mild, so damage to the substrate and the as-deposited films from UV radiation and ion bombardment is minimal or nonexistent.

Abstract translation: 一种或多种前体气体，例如一种或多种含硅气体，其可以是一种或多种有机硅和/或原硅酸四烷基酯，被引入处理室并暴露于自由基。 使用本文公开的技术沉积的介质膜可以含有硅。 沉积膜可能表现出很少的缺陷，低收缩率和高蚀刻选择性，机械稳定性和热稳定性。 在一些实施方案中，沉积的膜可以是无氢的。 沉积条件可能非常温和，因此对紫外辐射和离子轰击对基底和沉积膜的损伤最小或不存在。

公开(公告)号：WO2019060069A1

公开(公告)日：2019-03-28

申请号：PCT/US2018/047067

申请日：2018-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： MUKHERJEE, Shaunak ,  MALLICK, Abhijit Basu

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/768 ,  H05H1/46

Abstract: Embodiments of the present disclosure generally relate to methods of depositing a conformal layer on surfaces of high aspect ratio structures and related apparatuses for performing these methods. The conformal layers described herein are formed using PECVD methods in which a semiconductor device including a plurality of high aspect ratio features is disposed on a substrate support in a process volume of a process chamber, gases are supplied to the process volume, and a plasma is generated in the process volume by pulsing RF power coupled to the process gases disposed in the process volume of the process chamber.

公开(公告)号：WO2020251880A1

公开(公告)日：2020-12-17

申请号：PCT/US2020/036583

申请日：2020-06-08

Applicant: APPLIED MATERIALS, INC.

Inventor： DING, Yi ,  MUKHERJEE, Shaunak ,  XIE, Bo ,  YIM, Kang Sub ,  PADHI, Deenesh

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/02 ,  C23C16/32 ,  C23C16/50 ,  C23C16/56

Abstract: A method of forming a low-k dielectric layer with barrier properties is disclosed. The method comprises forming a dielectric layer by PECVD which is doped with one or more of boron, nitrogen or phosphorous. The dopant gas of some embodiments may be coflowed with the other reactants during deposition.

公开(公告)号：WO2020046980A1

公开(公告)日：2020-03-05

申请号：PCT/US2019/048394

申请日：2019-08-27

Applicant: APPLIED MATERIALS, INC.

Inventor： MUKHERJEE, Shaunak ,  XIE, Bo ,  CHO, Kevin Michael ,  YIM, Kang Sub ,  PADHI, Deenesh ,  GARG, Astha

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/505 ,  C23C16/52 ,  C23C16/458 ,  H01L21/02

Abstract: Embodiments described herein provide a method of forming a low-k carbon-doped silicon oxide (CDO) layer having a high hardness by a plasma-enhanced chemical vapor deposition (PECVD) process. The method includes providing a carrier gas at a carrier gas flow rate and a CDO precursor at a precursor flow rate to a process chamber. A radio frequency (RF) power is applied at a power level and a frequency to the CDO precursor. The CDO layer is deposited on a substrate within the process chamber.

公开(公告)号：WO2021173387A1

公开(公告)日：2021-09-02

申请号：PCT/US2021/018282

申请日：2021-02-17

Applicant: APPLIED MATERIALS, INC.

Inventor： MUKHERJEE, Shaunak ,  YIM, Kang Sub ,  PADHI, Deenesh ,  KANGUDE, Abhijit A. ,  RAJEEV, Rahul ,  CHOWDHURI, Shubham

IPC: C23C16/40 ,  C23C16/30 ,  C23C16/505 ,  H01L21/02

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

公开(公告)号：WO2021030309A1

公开(公告)日：2021-02-18

申请号：PCT/US2020/045698

申请日：2020-08-11

Applicant: APPLIED MATERIALS, INC.

Inventor： DURAND, William J. ,  SALY, Mark ,  KALUTARAGE, Lakmal C. ,  YIM, Kang Sub ,  MUKHERJEE, Shaunak

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52

Abstract: Methods for deposition of high-hardness low-k dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200°C to about 500°C; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.

公开(公告)号：WO2018118288A1

公开(公告)日：2018-06-28

申请号：PCT/US2017/061976

申请日：2017-11-16

Applicant: APPLIED MATERIALS, INC.

Inventor： GADRE, Milind ,  MUKHERJEE, Shaunak ,  JHA, Praket P. ,  PADHI, Deenesh ,  DUAN, Ziqing ,  MALLICK, Abhijit Basu

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/324 ,  H01L27/115

Abstract: Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.

公开(公告)号：WO2017074606A1

公开(公告)日：2017-05-04

申请号：PCT/US2016/052636

申请日：2016-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： MUKHERJEE, Shaunak ,  YIM, Kang Sub ,  PADHI, Deenesh ,  CHO, Kevin M. ,  PHAN, Khoi Anh ,  CHEN, Chien-An ,  DASH, Priyanka

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/205

CPC classification number: H01L21/02164 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/32

Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO 2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO 2 containing layer over the hardmask, the SiO 2 containing layer having very low carbon.

Abstract translation: 描述了硬掩模和ARC层的单一前体沉积方法。 所得膜是具有较高碳含量的SiOC层，其以低碳含量的高密度氧化硅SiO 2层终止。 该方法可包括将第一沉积前体递送至基底，第一沉积前体包含SiOC前体和第一流速的含氧气体; 使用等离子体激活沉积物质，由此在衬底的暴露表面上沉积含有SiOC的层。 然后将第二前体气体递送至含SiOC层，第二沉积气体包含具有第二流速和第二流速的含氧气体的不同或相同SiOC前体，并使用等离子体活化沉积气体，第二沉积气体 在硬掩模上形成包含SiO 2的层，含SiO 2的层具有非常低的碳。

公开(公告)号：WO2016130238A1

公开(公告)日：2016-08-18

申请号：PCT/US2016/012146

申请日：2016-01-05

Applicant: APPLIED MATERIALS, INC.

Inventor： CHEN, Yihong ,  CHAN, Kelvin ,  MUKHERJEE, Shaunak ,  MALLICK, Abhijit Basu

IPC: H01L21/205 ,  H01L21/027

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53228

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

Abstract translation: 本文公开的实施方式通常涉及形成氧化硅膜的方法。 所述方法可以包括在具有末端羟基的基材的表面上进行甲硅烷基化。 然后使用等离子体和H 2 O浸泡再生衬底表面上的羟基以进行另外的甲硅烷基化。 其它方法包括使用路易斯酸催化暴露的表面，定向灭活暴露的第一和第二表面以及在侧壁表面上沉积含硅层。 可以进行多次等离子体处理以沉积具有所需厚度的层。