公开(公告)号：WO2023086262A1

公开(公告)日：2023-05-19

申请号：PCT/US2022/048823

申请日：2022-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： ACHKASOV, Kostiantyn ,  REIMER, Peter ,  LE, Shawn, Thanhson ,  ZOKAEI, Sohrab

IPC: H01L21/66 ,  H01L21/67

Abstract: Exemplary diagnostic wafers for a semiconductor processing chamber may include a wafer body defining a plurality of recesses. The diagnostic wafers may include at least one data logging puck positionable within one of the plurality of recesses. The diagnostic wafers may include at least one battery puck positionable within one of the plurality of recesses. The diagnostic wafers may include at least one sensor puck positionable within one of the plurality of recesses.

公开(公告)号：WO2022240567A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/025772

申请日：2022-04-21

Applicant: APPLIED MATERIALS, INC.

Inventor： ISHIKAWA, Tetsuya ,  SRINIVASAN, Swaminathan T. ,  BAUER, Matthias ,  SUBBANNA, Manjunath ,  MORADIAN, Ala ,  SHAH, Kartik Bhupendra ,  SANCHEZ, Errol Antonio C. ,  RICE, Michael R. ,  REIMER, Peter ,  SHULL, Marc

IPC: C30B25/14 ,  C30B25/12 ,  C30B25/10 ,  C23C16/44 ,  C23C16/48 ,  C30B25/165 ,  H01L21/67115 ,  H01L21/6719

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

公开(公告)号：WO2004008505A2

公开(公告)日：2004-01-22

申请号：PCT/US2003/022367

申请日：2003-07-17

Applicant: APPLIED MATERIALS, INC.

Inventor： CHO, Sungmin ,  REIMER, Peter ,  SEIDL, Vincent

IPC: H01L21/00

CPC classification number: H01L21/682 ,  H01L21/67259 ,  H01L21/67265 ,  H01L21/67379 ,  H01L21/67772 ,  H01L21/67775

Abstract: A method and apparatus for preventing substrate damage in a factory interface. In one embodiment, a method for preventing substrate damage in a factory interface includes the steps of receiving an indicia of potential substrate damage, and automatically preventing substrates from moving out of a substrate storage cassette in response to the received indicia. The indicia may be a seismic warning signal, among others. In another embodiment, a method for preventing substrate damage in a factory interface includes the steps of moving a pod door in a first direction to a position spaced-apart and adjacent a pod, and moving the pod door laterally in a second direction to close the pod. The lateral closing motion of the pod door urges substrates, which may be misaligned in the pod, into a predefined position within the pod.

Abstract translation: 用于防止工厂界面中的衬底损坏的方法和设备。 在一个实施例中，一种用于防止工厂界面中的基板损坏的方法包括以下步骤：接收潜在的基板损坏的标记;以及响应于所接收的标记自动防止基板移出基板存储盒。 标记可以是地震警告信号等等。 在另一个实施例中，一种用于防止工厂界面中的基板损坏的方法包括以下步骤：将荚门沿第一方向移动到间隔开且邻近荚的位置，并且使荚门沿第二方向横向移动以关闭 荚。 吊舱门的侧向关闭运动促使可能在吊舱中未对准的衬底进入吊舱内的预定位置。

公开(公告)号：WO2022240574A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/026071

申请日：2022-04-23

Applicant: APPLIED MATERIALS, INC.

Inventor： ISHIKAWA, Tetsuya ,  SRINIVASAN, Swaminathan T. ,  SHAH, Kartik Bhupendra ,  MORADIAN, Ala ,  SUBBANNA, Manjunath ,  BAUER, Matthias ,  REIMER, Peter ,  RICE, Michael R.

IPC: C30B25/10 ,  C30B25/16 ,  C23C16/44 ,  C23C16/48 ,  C30B25/14 ,  C30B25/165 ,  H01L21/67115 ,  H01L21/6719

Abstract: The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

公开(公告)号：WO2022240560A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/025540

申请日：2022-04-20

Applicant: APPLIED MATERIALS, INC.

Inventor： ISHIKAWA, Tetsuya ,  SRINIVASAN, Swaminathan T. ,  SHAH, Kartik Bhupendra ,  MORADIAN, Ala ,  SUBBANNA, Manjunath ,  BAUER, Matthias ,  REIMER, Peter ,  RICE, Michael R.

IPC: C30B25/10 ,  C30B25/14 ,  C30B25/16 ,  H01L21/67 ,  C23C16/44 ,  C23C16/48 ,  C30B25/165 ,  H01L21/67115 ,  H01L21/6719

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

公开(公告)号：WO2022240553A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/025321

申请日：2022-04-19

Applicant: APPLIED MATERIALS, INC.

Inventor： ISHIKAWA, Tetsuya ,  SRINIVASAN, Swaminathan T. ,  BAUER, Matthias ,  MORADIAN, Ala ,  SUBBANNA, Manjunath ,  SHAH, Kartik Bhupendra ,  SANCHEZ, Errol Antonio C. ,  ZOKAEI, Sohrab ,  RICE, Michael R. ,  REIMER, Peter

IPC: C30B25/14 ,  C30B25/10 ,  C30B25/16 ,  C23C16/44 ,  C23C16/48 ,  C30B25/165 ,  H01L21/67115 ,  H01L21/6719

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

公开(公告)号：WO2022182533A1

公开(公告)日：2022-09-01

申请号：PCT/US2022/016087

申请日：2022-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： SHULL, Marc ,  REIMER, Peter ,  GAO, Hong P. ,  DESHPANDEY, Chandra V.

IPC: C04B41/45 ,  C04B41/50 ,  C04B35/581 ,  C04B35/628

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The methods may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region.The method may also include forming a layer of material on grains of the powder within the processing region.