公开(公告)号：WO2016167852A1

公开(公告)日：2016-10-20

申请号：PCT/US2016/013390

申请日：2016-01-14

Applicant: APPLIED MATERIALS, INC.

Inventor： MISHRA, Rohit ,  SCOTT, Graeme Jamieson ,  SIRAJUDDIN, Khalid Mohiuddin ,  TULSHIBAGWALE, Sheshraj L. ,  THIRUNAVUKARASU, Sriskanthatajah

IPC: H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32715

Abstract: Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an edge or bevel of the substrate. Contamination of the substrate bevel, backside and substrate periphery region may be reduced after a plasma process. In one embodiment, an edge ring includes a base circular ring having an inner surface defining a center opening formed thereon and an outer surface defining a perimeter of the base circular ring. The base circular ring includes an upper body and a lower portion connected to the upper body. A step is formed at the inner surface of the base circular ring and above a first upper surface of the upper body. The step defines a pocket above the first upper surface of the upper body. A plurality of raised features formed on the first upper surface of the base circular ring.

Abstract translation: 本公开的实施例包括用于从衬底周边区域（例如衬底的边缘或斜面）减少残余膜层的方法和装置。 在等离子体处理之后，衬底斜面，背面和衬底周边区域的污染可能会降低。 在一个实施例中，边缘环包括基部圆环，其具有限定其上形成的中心开口的内表面和限定基部圆环的周边的外表面。 基座圆环包括上身和连接到上身的下部。 在基部圆环的内表面和上身的第一上表面上方形成台阶。 该步骤限定在上身的第一上表面上方的口袋。 形成在基部圆环的第一上表面上的多个凸起特征。

公开(公告)号：WO2014099252A1

公开(公告)日：2014-06-26

申请号：PCT/US2013/071309

申请日：2013-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： LE, Dung Huu ,  SCOTT, Graeme Jamieson ,  DINEV, Jivko ,  YALAMANCHILI, Madhava Rao ,  SIRAJUDDIN, Khalid Mohiuddin ,  BAJAJ, Puneet ,  SINGH, Saravjeet

IPC: H01L21/02

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32623 ,  H01L21/67069

Abstract: Embodiments of the invention generally relate to an apparatus and method for plasma etching. In one embodiment, the apparatus includes a process ring with an annular step away from an inner wall of the ring and is disposed on a substrate support in a plasma process chamber. A gap is formed between the process ring and a substrate placed on the substrate support. The annular step has an inside surface having a height ranging from about 3 mm to about 6 mm. During operation, an edge-exclusion gas is introduced to flow through the gap and along the inside surface, so the plasma is blocked from entering the space near the edge of the substrate.

Abstract translation: 本发明的实施例一般涉及用于等离子体蚀刻的装置和方法。 在一个实施例中，该设备包括具有远离环的内壁的环形台阶并且设置在等离子体处理室中的基板支撑件上的处理环。 在工艺环和放置在衬底支架上的衬底之间形成间隙。 环形台阶的内表面具有约3mm至约6mm的高度。 在操作期间，引入边缘排除气体流过间隙并沿着内表面，因此阻止等离子体进入基板边缘附近的空间。

公开(公告)号：WO2014182592A1

公开(公告)日：2014-11-13

申请号：PCT/US2014/036742

申请日：2014-05-05

Applicant: APPLIED MATERIALS, INC.

Inventor： LIU, Tong ,  REYLAND, David ,  MISHRA, Rohit ,  SIRAJUDDIN, Khalid Mohiuddin ,  YALAMANCHILI, Madhava Rao ,  KUMAR, Ajay

IPC: H01L21/027 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/3244 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/3086 ,  H01L21/76898

Abstract: In some embodiments, a method for etching features into a substrate may include exposing a substrate having a photoresist layer disposed atop the substrate to a first process gas to form a polymer containing layer atop sidewalls and a bottom of a feature formed in the photoresist layer, wherein the first process gas is selectively provided to a first area of the substrate via a first set of gas nozzles disposed within a process chamber and; exposing the substrate to a second process gas having substantially no oxygen to etch the feature into the substrate, wherein the second process gas is selectively provided to a second area of the substrate via a second set of gas nozzles disposed in the process chamber.

Abstract translation: 在一些实施例中，用于将特征蚀刻到衬底中的方法可以包括将具有设置在衬底上的光致抗蚀剂层的衬底暴露于第一工艺气体，以在光致抗蚀剂层中形成的特征的侧壁和底部的顶部上形成聚合物含有层， 其中所述第一处理气体经由设置在处理室内的第一组气体喷嘴选择性地提供到所述衬底的第一区域; 将基底暴露于基本上没有氧的第二工艺气体，以将特征蚀刻到衬底中，其中通过设置在处理室中的第二组气体喷嘴将第二工艺气体选择性地提供到衬底的第二区域。