公开(公告)号：WO2023069610A1

公开(公告)日：2023-04-27

申请号：PCT/US2022/047268

申请日：2022-10-20

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Banqiu ,  MAKHAMREH, Khalid ,  DAGAN, Eliyahu Shlomo

IPC: H01L21/67 ,  B08B3/12 ,  G01N21/27 ,  G01J3/443

Abstract: Embodiments of megasonic cleaning chambers are provided herein. In some embodiments, a megasonic cleaning chamber includes: a chamber body defining an interior volume therein; a substrate support to support a substrate disposed in the interior volume; a supply tube comprising a transparent material configured to direct a cleaning fluid to the substrate support; a megasonic power generator coupled to the supply tube to provide megasonic power to the cleaning fluid; a megasonic transducer coupled to the megasonic power generator and the supply tube to create megasonic waves in the cleaning fluid and to form cavities in the cleaning fluid, wherein the megasonic transducer is configured to direct the megasonic waves and cavities toward the substrate support; and one or more sensors configured to generate a signal indicative of a property of the cavities in the cleaning fluid.

公开(公告)号：WO2022217129A1

公开(公告)日：2022-10-13

申请号：PCT/US2022/024126

申请日：2022-04-08

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Banqiu ,  MAKHAMREH, Khalid ,  DAGAN, Eliyahu Shlomo

IPC: G03F7/20 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of baking chambers for baking a photomask are provided herein. In some embodiments, a baking chamber includes: a chamber body enclosing a first interior volume and a second interior volume, disposed beneath and fluidly independent from the first interior volume; a radiant heat source disposed in the first interior volume; a photomask support structure configured to support a photomask disposed in the second interior volume; a window disposed between the first interior volume the second interior volume, wherein the window is made of a material that is transparent to thermal radiation; a first gas inlet and a first gas outlet coupled to the first interior volume; and a second gas inlet and a second gas outlet coupled to the second interior volume on opposite ends thereof to facilitate flow of a process gas laterally through the second interior volume and across the photomask support structure.

公开(公告)号：WO2009091642A2

公开(公告)日：2009-07-23

申请号：PCT/US2009/030272

申请日：2009-01-07

Applicant: APPLIED MATERIALS, INC. ,  WU, Banqiu ,  KUMAR, Ajay

Inventor： WU, Banqiu ,  KUMAR, Ajay

IPC: H01L21/302 ,  H01L21/30

CPC classification number: H01L21/02041

Abstract: Embodiments of the present invention generally provide apparatus and methods for cleaning a substrate, such as a mask. One embodiment of the present invention provides an apparatus for cleaning a substrate comprising a substrate support configured to receive and support the substrate, a collecting tip connected with an electrostatic power source, wherein the collecting tip is configured to pickup particles on a surface of the substrate using electrostatic force, and an indexing mechanism configured to provide relative movement between the collecting tip and the substrate support.

Abstract translation: 本发明的实施例通常提供用于清洁衬底（例如掩模）的装置和方法。 本发明的一个实施例提供了一种用于清洁基板的设备，该设备包括被配置为接收和支撑基板的基板支架，与静电源连接的收集尖端，其中收集尖端被配置为拾取基板表面上的微粒 使用静电力，以及分度机构，该分度机构构造成提供收集尖端和基板支撑件之间的相对运动。

公开(公告)号：WO2021118682A1

公开(公告)日：2021-06-17

申请号：PCT/US2020/055566

申请日：2020-10-14

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Banqiu ,  MAKHAMREH, Khalid ,  DAGAN, Eli

IPC: G03F1/82 ,  G03F1/26 ,  G03F1/62

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for removing an adhesive material from a photomask. In one embodiment, an apparatus for processing a photomask includes an enclosure, a substrate support assembly disposed in the enclosure, and a dielectric barrier discharge (DBD) plasma generator disposed above the substrate support assembly, wherein the dielectric barrier discharge plasma generator further comprises a first electrode, a second electrode, wherein the first and the second electrodes are vertically aligned and in parallel, a dielectric barrier positioned between the first electrode and the second electrode, and a discharge space defined between the dielectric barrier and the second electrode.

公开(公告)号：WO2013126175A1

公开(公告)日：2013-08-29

申请号：PCT/US2013/022988

申请日：2013-01-24

Applicant: APPLIED MATERIALS, INC. ,  WU, Banqiu ,  KUMAR, Ajay ,  NALAMASU, Omkaram

Inventor： WU, Banqiu ,  KUMAR, Ajay ,  NALAMASU, Omkaram

IPC: H01L21/027 ,  H01L21/205 ,  H01L21/3065

CPC classification number: G03F7/16 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/167

Abstract: Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.

Abstract translation: 在本公开中提供了用于执行原子层沉积光刻工艺的方法和装置。 在一个实施例中，用于在器件中的材料层上形成特征的方法包括将第一反应气体混合物脉动到设置在处理室中的衬底的表面，以在衬底表面上形成材料层的第一单层， 高能辐射以处理第一单层的第一区域，以及将第二反应气体混合物脉冲至衬底表面以在第一单层的第二区域上选择性地形成第二单层。

公开(公告)号：WO2012173759A2

公开(公告)日：2012-12-20

申请号：PCT/US2012/039207

申请日：2012-05-23

Applicant: APPLIED MATERIALS, INC. ,  YALAMANCHILI, Madhava, Rao ,  LEI, Wei-sheng ,  EATON, Brad ,  SINGH, Saravjeet ,  KUMAR, Ajay ,  WU, Banqiu

Inventor： YALAMANCHILI, Madhava, Rao ,  LEI, Wei-sheng ,  EATON, Brad ,  SINGH, Saravjeet ,  KUMAR, Ajay ,  WU, Banqiu

IPC: H01L21/301

CPC classification number: H01L21/78 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/172 ,  B23K2203/50 ,  H01L21/30655 ,  H01L21/3086 ,  H01L21/67207

Abstract: Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off.

Abstract translation: 通过激光划线和等离子体蚀刻来切割基板的方法。 一种方法包括通过累积等离子体沉积聚合物的厚度来形成具有等离子体蚀刻室的原位掩模，以保护IC凸起表面免于随后的等离子体蚀刻。 可以与等离子体沉积的聚合物一起使用第二掩模材料，例如水溶性掩模材料。 用飞秒激光划线工艺对掩模的至少一部分进行图案化以提供具有沟槽的图案化掩模。 在IC之间的衬底的图案化曝光区域中，其中衬底被等离子体蚀刻以分离IC和水溶性材料层被洗掉。

公开(公告)号：WO2012173699A1

公开(公告)日：2012-12-20

申请号：PCT/US2012/034944

申请日：2012-04-25

Applicant: APPLIED MATERIALS, INC. ,  WU, Banqiu ,  KUMAR, Ajay ,  RAMASWAMY, Kartik ,  NALAMASU, Omkaram

Inventor： WU, Banqiu ,  KUMAR, Ajay ,  RAMASWAMY, Kartik ,  NALAMASU, Omkaram

IPC: H01L21/3065 ,  H01L21/027

CPC classification number: G03F7/36 ,  G03F7/40

Abstract: The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

Abstract translation: 本发明提供了控制和最小化显影过程中的工艺缺陷的方法和装置，并且在显影过程之后修改光致抗蚀剂层的线宽粗糙度（LWR），并且在随后的蚀刻工艺期间保持良好的轮廓控制。 在一个实施例中，用于在衬底上形成特征的方法包括通过主要使用电子来显影和去除设置在电子处理室中的衬底上的感光层中的暴露区域，主要使用电子从衬底去除污染物， 通过主要使用电子在电子处理室中由显影的感光层曝光的光敏聚合物层。

公开(公告)号：WO2022182510A1

公开(公告)日：2022-09-01

申请号：PCT/US2022/015554

申请日：2022-02-08

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Banqiu ,  MAKHAMREH, Khalid ,  DAGAN, Eliyahu Shlomo

IPC: G03F1/48 ,  G03F1/24

Abstract: Methods and apparatus for reducing ruthenium oxide on an extreme ultraviolet (EUV) photomask leverage temperature, plasma, and chamber pressure to increase the reduction. In some embodiments, a method includes heating the EUV photomask with a ruthenium (Ru) capping layer with a top surface which has a Ru oxide layer to a temperature of approximately 100 degrees Celsius to approximately a thermal budget of the EUV photomask, flowing a reducing agent gas into an EUV photomask processing chamber, and pressurizing the EUV photomask processing chamber to a process pressure to increase a reducing reaction between the reducing agent gas and a Ru oxide layer on the Ru capping layer. Other embodiments may incorporate remote plasma generators or atmospheric-pressure plasma generators to enhance the reduction of Ru oxides on the Ru capping layer.

公开(公告)号：WO2020060715A1

公开(公告)日：2020-03-26

申请号：PCT/US2019/047574

申请日：2019-08-21

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Banqiu ,  DAGAN, Eli

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/677 ,  H01L21/027 ,  G03F7/20

Abstract: Generally, examples described herein relate to systems and methods for processing a substrate, and more particularly, for removing an edge bead or other source of contamination from an edge of a substrate. An example is a processing system including a chamber, a substrate handler within the chamber, and a radiation generator within the chamber. The substrate handler is configured to secure a substrate. The substrate handler is operable to position an edge surface of the substrate such that radiation propagating from the radiation generator is directed to the edge surface of the substrate, and operable to position a periphery region of a deposit surface of the substrate that is perpendicular to and along the edge surface such that radiation propagating from the radiation generator is directed to the periphery region.

公开(公告)号：WO2020023172A1

公开(公告)日：2020-01-30

申请号：PCT/US2019/039071

申请日：2019-06-25

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Banqiu ,  DAGAN, Eli

IPC: G03F1/62 ,  H01L21/027 ,  H01L21/324 ,  H01L21/02 ,  H01L21/67 ,  G03F7/20

Abstract: Embodiments of the present disclosure generally include apparatus and methods for removing adhesive residues from a surface of a lithography mask. In particular, the processing systems described herein provide for the delivery of a solvent to a discrete plurality of locations on the surface of the lithography mask to facilitate the removal of adhesive residue therefrom. In one embodiment, a method of processing a substrate includes positioning the substrate on a substrate support of a processing system, sealing individual ones of a plurality of cleaning units to a surface of the substrate at a corresponding plurality of locations, heating a cleaning fluid to a temperature between about 50 °C and about 150 °C, flowing the cleaning fluid to, and thereafter, from, the plurality of cleaning units, and exposing the surface of the substrate to the cleaning fluid at the plurality of locations.