公开(公告)号：WO2022151472A1

公开(公告)日：2022-07-21

申请号：PCT/CN2021/072459

申请日：2021-01-18

Applicant: APPLIED MATERIALS, INC. ,  XUE, Yuan

Inventor： SHARMA, Vijay Bhan ,  XUE, Yuan ,  SANGLE, Abhijeet Laxman ,  RAMAKRISHNAN, Bharatwaj ,  YANG, Yi ,  SETH, Suresh Chand ,  KADAM, Ankur Anant

IPC: H01L41/277 ,  H01L41/316 ,  H01L41/187 ,  C23C14/08 ,  C23C14/35

Abstract: A piezoelectric device comprises: a substrate (12) and a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on the substrate (12). The PMNPT film comprises: a thermal oxide layer (20) on the substrate (12); a first electrode above on the thermal oxide layer (20); a seed layer (26) above the first electrode; a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer (16) on the seed layer (26), and a second electrode on the PMNPT piezoelectric layer (16). The PMNPT film comprises a piezoelectric coefficient (d33) of greater than or equal to 200 pm/V.

公开(公告)号：WO2022147654A1

公开(公告)日：2022-07-14

申请号：PCT/CN2021/070332

申请日：2021-01-05

Applicant: APPLIED MATERIALS, INC. ,  XUE, Yuan

Inventor： PAI, Uday ,  XUE, Yuan ,  SANGLE, Abhijeet Laxman ,  SHARMA, Vijay Bhan ,  SETH, Suresh Chand ,  RAMAKRISHNAN, Bharatwaj ,  JEMBULINGAM, Soundarrajan ,  CHANNARAYAPATNA PUTTANNA, Naveen ,  KADAM, Ankur ,  YANG, Yi

IPC: H01L21/203 ,  C23C14/34

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.

公开(公告)号：WO2022040869A1

公开(公告)日：2022-03-03

申请号：PCT/CN2020/110838

申请日：2020-08-24

Applicant: APPLIED MATERIALS, INC. ,  XUE, Yuan

Inventor： SANGLE, Abhijeet Laxman ,  SHARMA, Vijay Bhan ,  XUE, Yuan ,  KADAM, Ankur ,  RAMAKRISHNAN, Bharatwaj ,  PAI, Uday ,  PATIL, Nilesh

IPC: H01L41/083 ,  H01L41/27

Abstract: Disclosed are methods and apparatus for depositing uniform layers on a substrate (201) for piezoelectric applications. An ultra-thin seed layer (308) having a uniform thickness from center to edge thereof is deposited on a substrate (201). A template layer (310) closely matching the crystal structure of a subsequently formed piezoelectric material layer (312) is deposited on a substrate (201). The uniform thickness and orientation of the seed layer (308) and the template layer (310), in turn, facilitate the growth of piezoelectric materials with improved crystallinity and piezoelectric properties.

公开(公告)号：WO2021096884A1

公开(公告)日：2021-05-20

申请号：PCT/US2020/059881

申请日：2020-11-10

Applicant: APPLIED MATERIALS, INC.

Inventor： SANGLE, Abhijeet Laxman ,  SHARMA, Vijay Bhan ,  XUE, Yuan ,  PAI, Uday ,  RAMAKRISHNAN, Bharatwaj ,  KADAM, Ankur

IPC: H01L41/18 ,  H01L41/22

Abstract: A piezoelectric device includes a substrate, a thermal oxide layer on the substrate, a metal or metal oxide adhesion layer on the thermal oxide layer, a lower electrode on the metal oxide adhesion layer, a seed layer on the lower electrode, a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer on the seed layer, and an upper electrode on the PMNPT piezoelectric layer.

公开(公告)号：WO2022266784A1

公开(公告)日：2022-12-29

申请号：PCT/CN2021/101145

申请日：2021-06-21

Applicant: APPLIED MATERIALS, INC. ,  YANG, Yi

Inventor： CHEN, Jian Janson ,  YANG, Yi ,  MA, Chong ,  XUE, Yuan

IPC: H01L21/00 ,  C23C16/00 ,  H05H1/24 ,  C23C16/45536 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32183

Abstract: Methods and apparatus for controlling plasma in a process chamber leverage an RF termination filter which provides an RF path to ground. In some embodiments, an apparatus may include a DC filter configured to be electrically connected between a DC power supply and electrodes embedded in an electrostatic chuck where the DC filter is configured to block DC current from the DC power supply from flowing through the DC filter and an RF termination filter configured to be electrically connected between the DC filter and an RF ground of the process chamber where the RF termination filter is configured to adjust an impedance of the electrodes relative to the RF ground.

公开(公告)号：WO2021096867A1

公开(公告)日：2021-05-20

申请号：PCT/US2020/059853

申请日：2020-11-10

Applicant: APPLIED MATERIALS, INC.

Inventor： SANGLE, Abhijeet Laxman ,  SHARMA, Vijay Bhan ,  KADAM, Ankur ,  RAMAKRISHNAN, Bharatwaj ,  SIVARAMAKRISHNAN, Visweswaren ,  XUE, Yuan

IPC: H01L41/18 ,  C23C14/08 ,  C23C14/34 ,  C23C14/58 ,  H01L41/22

Abstract: A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400 °C, and thermally annealing the substrate at a temperature above 500 °C to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.