SELECTION OF POLISHING PARAMETERS TO GENERATE REMOVAL PROFILE
    1.
    发明申请
    SELECTION OF POLISHING PARAMETERS TO GENERATE REMOVAL PROFILE 审中-公开
    选择抛光参数以生成去除轮廓

    公开(公告)号:WO2012148859A2

    公开(公告)日:2012-11-01

    申请号:PCT/US2012/034702

    申请日:2012-04-23

    Abstract: Values are selected for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head with a plurality of zones to apply independently controllable pressures on a substrate. Data is stored relating variation in removal profile on a front surface of the substrate to variation in the controllable parameters, the data including removal at a plurality of positions on the front surface of the substrate, there being a greater number of positions than chambers. A value is determined for each parameter of the plurality of controllable parameters to minimize a difference between a target removal profile and an expected removal profile calculated from the data relating variation in removal profile on a front surface of the substrate to variation in the parameters. The value for each parameter of the plurality of controllable parameters is stored.

    Abstract translation: 为化学机械抛光系统的多个可控参数选择值,其包括具有多个区域的载体头,以在基底上施加独立的可控压力。 存储数据存储在基板的前表面上的去除轮廓的变化,以改变可控参数,包括在基板的前表面上的多个位置处的去除的数据,存在比腔更多的位置数量。 为多个可控参数的每个参数确定一个值,以最小化目标去除曲线与根据数据相关的预期去除曲线之间的差异,该数据与基板的前表面上的去除曲线的变化相关,参数的变化。 存储多个可控参数的每个参数的值。

    CONTROL OF PROCESSING PARAMETERS FOR SUBSTRATE POLISHING WITH SUBSTRATE PRECESSION

    公开(公告)号:WO2022187105A1

    公开(公告)日:2022-09-09

    申请号:PCT/US2022/018014

    申请日:2022-02-25

    Abstract: Generating a recipe for a polishing process includes receiving a target removal profile that includes a target thickness to remove for locations spaced angularly around a center of a substrate, storing a first function providing substrate orientation relative to a carrier head over time, storing a second function defining a polishing rate below a zone of the zone as a function of one or more pressures of one or more zones of the carrier head, and for each particular zone of the plurality of zones, calculate a recipe defining a pressure for the particular zone over time. Calculating the recipe includes calculating an expected thickness profile after polishing from the second function defining the polishing rate and the first function providing substrate orientation relative to the zone over time, and applying a minimizing algorithm to reduce a difference between the expected thickness profile and the target thickness profile.

    RETAINING RING FOR CMP
    4.
    发明申请
    RETAINING RING FOR CMP 审中-公开
    用于CMP的定位环

    公开(公告)号:WO2018022520A2

    公开(公告)日:2018-02-01

    申请号:PCT/US2017/043551

    申请日:2017-07-24

    Abstract: A retaining ring includes a generally annular body having an inner surface to constrain a substrate and a bottom surface, the bottom surface having a plurality of channels extending from an outer surface to the inner surface, and a plurality of islands separated by the channels and providing a contact area to contact a polishing pad, wherein the contact area is about 15-40% of a plan area of the bottom surface.

    Abstract translation: 保持环包括大致环形的本体,该本体具有限定基底和底表面的内表面,该底表面具有从外表面延伸到内表面的多个通道,以及多个 所述岛由所述通道隔开并且提供接触区域以接触抛光垫,其中所述接触面积为所述底面的平面面积的约15-40%。

    SUBSTRATE EDGE TUNING WITH RETAINING RING
    5.
    发明申请
    SUBSTRATE EDGE TUNING WITH RETAINING RING 审中-公开
    基板边缘调整与保持环

    公开(公告)号:WO2012019144A2

    公开(公告)日:2012-02-09

    申请号:PCT/US2011/046828

    申请日:2011-08-05

    CPC classification number: B24B41/06 B24B37/32 B24B41/067

    Abstract: A carrier head for a chemical mechanical polisher includes base, a substrate mounting surface, an annular inner ring, and an annular outer ring. The inner ring has an inner surface configured to circumferentially surround the edge of a substrate positioned on the substrate mounting surface, an outer surface, and a lower surface to contact a polishing pad. The inner ring is vertically movable relative to the substrate mounting surface. The outer ring has an inner surface circumferentially surrounding the inner ring, an outer surface, and a lower surface to contact the polishing pad. The outer ring is vertically movable relative to and independently of the substrate mounting surface and the inner ring. The lower surface of the inner ring has a first width, and the lower surface of the outer ring has a second width greater than the first width.

    Abstract translation: 用于化学机械抛光机的载体头包括基底,基底安装表面,环形内环和环形外环。 所述内圈具有内表面,所述内表面被构造为围绕位于所述基板安装表面上的基板的边缘,外表面和与所述抛光垫接触的下表面。 内环可相对于基板安装表面垂直移动。 外环具有周向包围内环的内表面,外表面和与抛光垫接触的下表面。 外环可以相对于衬底安装表面和内环独立地上下移动。 内圈的下表面具有第一宽度,并且外环的下表面具有大于第一宽度的第二宽度。

    ASYMMETRY CORRECTION VIA ORIENTED WAFER LOADING

    公开(公告)号:WO2021041417A1

    公开(公告)日:2021-03-04

    申请号:PCT/US2020/047806

    申请日:2020-08-25

    Abstract: A chemical mechanical polishing system includes a metrology station having a sensor configured to measure a thickness profile of a substrate, a robotic arm configured to transfer the substrate from the metrology station to a polishing station having, a platen to support a polishing pad having a polishing surface, a carrier head on the polishing surface, the carrier head having a membrane configured to apply pressure to the substrate in the carrier head, and a controller configured to receive measurements from the sensor and configured to control the robotic arm to orient the substrate in the carrier head according to substrate profile and a removal profile for the carrier head.

    METHODS AND COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING SHALLOW TRENCH ISOLATION SUBSTRATES
    9.
    发明申请
    METHODS AND COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING SHALLOW TRENCH ISOLATION SUBSTRATES 审中-公开
    化学机械抛光方法和组合物浅层分离基体

    公开(公告)号:WO2003009349A2

    公开(公告)日:2003-01-30

    申请号:PCT/US2002/022587

    申请日:2002-07-16

    CPC classification number: H01L21/31053 C09G1/02 H01L21/76229

    Abstract: Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate including positioning a substrate comprising at least first dielectric material and second dielectric material disposed thereon in a polishing apparatus, polishing the substrate with a first polishing composition having a first selectivity, and polishing the substrate with a second polishing composition having a second selectivity greater than the first selectivity.

    Abstract translation: 提供的方法和组合物用于在表面形貌中具有减少或最小缺陷的平面化基板表面。 在一个方面,提供了一种用于处理衬底的方法,包括将包括至少第一介电材料的衬底和设置在其上的第二电介质材料定位在抛光设备中,用具有第一选择性的第一抛光组合物抛光衬底,以及抛光衬底 其具有比第一选择性更大的第二选择性的第二抛光组合物。

Patent Agency Ranking