DIAMOND COMPOSITE CMP PAD CONDITIONER
    3.
    发明申请
    DIAMOND COMPOSITE CMP PAD CONDITIONER 审中-公开
    金刚石复合CMP垫调节器

    公开(公告)号:WO2017177072A1

    公开(公告)日:2017-10-12

    申请号:PCT/US2017/026465

    申请日:2017-04-06

    CPC classification number: B24B53/017 B24B53/12

    Abstract: A chemical-mechanical polishing/planarization pad conditioner body made from diamond-reinforced reaction bonded silicon carbide, with diamond particles protruding or "standing proud" of the rest of the surface, and uniformly distributed on the cutting surface. In one embodiment, the diamond particles are approximately uniformly distributed throughout the composite, but in other embodiments they are preferentially located at and near the conditioning surface. The tops of the diamond particles can be engineered to be at a constant elevation (i.e., the conditioner body can be engineered to be very flat). Exemplary shapes of the body may be disc or toroidal. The diamond particles can be made to protrude from the conditioning surface by preferentially eroding the Si/SiC matrix. The eroding may be accomplished by electrical discharge machining or by lapping/polishing with abrasive.

    Abstract translation: 化学机械抛光/平坦化垫修整器主体由金刚石增强的反应结合碳化硅制成,其中金刚石颗粒突出或“自立” 的其余部分,并均匀地分布在切割表面上。 在一个实施方案中,金刚石颗粒大致均匀地分布在整个复合材料中,但在其他实施方案中,它们优选位于调节表面处和附近。 金刚石颗粒的顶部可以设计成处于恒定的高度(即,调节器本体可以被设计成非常平坦)。 主体的示例性形状可以是圆盘形或环形的。 通过优先侵蚀Si / SiC基体,可以使金刚石颗粒从调节表面突出。 腐蚀可以通过电火花加工或用研磨剂研磨/抛光来完成。

    WAFER-SUPPORTING MEMBER, METHOD FOR MANUFACTURING SAME, AND WAFER-POLISHING UNIT COMPRISING SAME
    4.
    发明申请
    WAFER-SUPPORTING MEMBER, METHOD FOR MANUFACTURING SAME, AND WAFER-POLISHING UNIT COMPRISING SAME 审中-公开
    支撑构件,其制造方法和包括其的抛光单元

    公开(公告)号:WO2011043567A2

    公开(公告)日:2011-04-14

    申请号:PCT/KR2010006755

    申请日:2010-10-04

    Inventor: SUNG JAE CHEL

    CPC classification number: B24B37/32

    Abstract: One embodiment relates to a wafer-supporting member comprising: a base substrate; a support unit which is bonded up to a predetermined width onto an edge of the base substrate, and which has a rounded outermost periphery; and a coating layer formed on an edge of the support unit.

    Abstract translation: 一个实施例涉及一种晶片支撑构件,包括:基底; 支撑单元,其以预定宽度结合到基底基板的边缘上,并且具有圆形的最外周; 以及形成在所述支撑单元的边缘上的涂层。

    METHOD FOR MANUFACTURING A POLISHING RETAINER RING AND RETAINER RING MANUFACTURED THEREBY
    5.
    发明申请
    METHOD FOR MANUFACTURING A POLISHING RETAINER RING AND RETAINER RING MANUFACTURED THEREBY 审中-公开
    制造抛光保持器环和保持器环的方法

    公开(公告)号:WO2010120128A3

    公开(公告)日:2011-03-31

    申请号:PCT/KR2010002339

    申请日:2010-04-15

    Inventor: HWANG JUNG HO

    CPC classification number: B24B37/32 B24D7/06

    Abstract: The present invention relates to a method for manufacturing a polishing retainer ring and a retainer ring manufactured thereby to omit the work of forming slits by attaching a polishing element divided into individual sections, thereby simplifying the work process. The method for manufacturing a polishing retainer ring for polishing a semiconductor element according to the present invention comprises: a first step of smoothly machining a top surface of a ring-shaped parent material; a second step of preparing a plurality of polishing element units by machining a polishing element to be identical with the top shape of the parent material; and a third step of adhering the prepared polishing element unit onto the top surface of the parent material, wherein the respective polishing element units are adhered to be apart from each other at a uniform interval. A retainer ring for polishing a semiconductor element may be manufactured by the method for manufacturing a polishing retainer ring as above, wherein the polishing retainer ring is formed of a polishing element adhered to the top of the parent material and the polishing element is characterized in that a plurality of polishing element units are adhered at a uniform interval to form grooves.

    Abstract translation: 本发明涉及一种用于制造抛光保持环和保持环的方法,由此通过附加分割成各个部分的抛光元件来省略形成狭缝的工作,从而简化了加工过程。 根据本发明的用于制造用于抛光半导体元件的抛光保持环的方法包括:平滑地加工环形母材的顶表面的第一步骤; 第二步骤,通过机加工与母材顶部形状相同的抛光元件来制备多个抛光元件单元; 以及将准备的抛光单元单元粘附到母材的顶表面上的第三步骤,其中相应的抛光单元单元以均匀的间隔彼此分开。 用于抛光半导体元件的保持环可以通过如上制造抛光保持环的方法制造,其中抛光保持环由附着到母材顶部的抛光元件形成,抛光元件的特征在于 以均匀的间隔粘接多个研磨元件单元以形成凹槽。

    CMP RETAINING RING
    6.
    发明申请
    CMP RETAINING RING 审中-公开
    CMP保持环

    公开(公告)号:WO2006127780B1

    公开(公告)日:2007-07-05

    申请号:PCT/US2006020036

    申请日:2006-05-24

    CPC classification number: B24B37/32 Y10T29/49826

    Abstract: A chemical mechanical polishing retaining ring comprising a base portion made from a wear-resistant plastic material, and an upper portion, or backbone portion, made from a stiffer and more wear resistant material. One of the base or backbone portion is preferably overmolded onto the other. The base portion can be generally defined by a flat pad-contacting surface, an outer surface, and an inner surface. The base portion can additionally include channels extending from the outer surface to the inner surface to facilitate transfer of slurry to and from the substrate to be polished during the process. One or both of the base portion or backbone portion further includes a plurality of circular ribs that serve to create additional bonding surface with the overmolded material.

    Abstract translation: 一种化学机械抛光保持环,其包括由耐磨塑料材料制成的基部,以及由较硬和更耐磨材料制成的上部或主体部分。 基部或骨架部分中的一个优选地包覆成型在另一个上。 基部一般可以由平垫接触表面,外表面和内表面限定。 基部可以另外包括从外表面延伸到内表面的通道,以便于在该过程期间将浆料转移到待抛光的基底上和从基底转移。 基部或骨架部分中的一个或两个还包括多个圆形肋,其用于与包覆成型的材料产生附加的粘合表面。

    SUBSTRATE HOLDING MECHANISM, SUBSTRATE POLISHING APPARATUS AND SUBSTRATE POLISHING METHOD
    7.
    发明申请
    SUBSTRATE HOLDING MECHANISM, SUBSTRATE POLISHING APPARATUS AND SUBSTRATE POLISHING METHOD 审中-公开
    基板保持机构,基板抛光装置和基板抛光方法

    公开(公告)号:WO2004060610A3

    公开(公告)日:2004-11-25

    申请号:PCT/JP0317032

    申请日:2003-12-26

    CPC classification number: B24B37/015 B24B41/061 B24B55/02

    Abstract: A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing the amount of heat generated during polishing of a substrate to be polished and of effectively cooling the substrate holding part of the substrate holding mechanism and also capable of effectively preventing the polishing solution and polishing dust from adhering to the outer peripheral portion of the substrate holding part and drying out thereon. The substrate holding mechanism (top ring 1) has a mounting flange 2, a support member 6, and a retainer ring 3. A substrate W to be polished is held on the lower side of the support member 6 surrounded by the retainer ring 3, and the substrate W is pressed against a polishing surface. The mounting flange 2 is provided with a flow passage 26 contiguous with at least the retainer ring 3. A temperature-controlled gas is supplied through the flow passage 26 to cool the mounting flange 2, the support member 6 and the retainer ring 3. The retainer ring 3 is provided with a plurality of through-holes 3a communicating with the flow passage 26 to spray the gas flowing through the flow passage 26 onto the polishing surface of a polishing table.

    Abstract translation: 基板保持机构,基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能,并有效地冷却基板保持机构的基板保持部,并且还能够有效地 防止研磨液和研磨粉尘附着在基板保持部的外周部并在其上干燥。 基板保持机构(顶环1)具有安装凸缘2,支撑构件6和保持环3.待被抛光的基板W被保持在由保持环3包围的支撑构件6的下侧, 将基板W压在研磨面上。 安装凸缘2设置有与至少保持环3相邻的流动通道26.通过流动通道26供应温度控制的气体以冷却安装凸缘2,支撑构件6和保持环3。 保持环3设置有与流路26连通的多个通孔3a,以将流过流路26的气体喷射到研磨台的研磨面上。

    RECYCLABLE RETAINING RING ASSEMBLY FOR A CHEMICAL MECHANICAL POLISHING APPARATUS
    8.
    发明申请
    RECYCLABLE RETAINING RING ASSEMBLY FOR A CHEMICAL MECHANICAL POLISHING APPARATUS 审中-公开
    用于化学机械抛光装置的可循环保持环组件

    公开(公告)号:WO0123135A3

    公开(公告)日:2003-12-04

    申请号:PCT/US0026872

    申请日:2000-09-29

    CPC classification number: B24B37/32

    Abstract: An annular ring assembly (34) is provided in which mechanical elements of the retaining ring assembly maintain strict planar flatness, rigidity, high tolerances and surface stability control. Additionally, glues, adhesives, and epoxies are eliminated from the construction of the plastic retaining and backing ring assembly (32). Further, adverse chemical reaction and contamination from adhesives that are typically in direct contact with chemical slurry and substrate layers undergoing polishing are eliminated. As a result, the present invention provides a low cost alternative to suppliers and manufacturers of retaining rings and facilitates a method to exchange, recondition and recycle the retaining ring for an infinite period, thus reducing consumable waste materials. Further, the ring assembly maintains uniform mechanical properties and strict tolerances after post reconditioning, thus reducing the variability and maintaining process consistency.

    Abstract translation: 提供了环形圈组件(34),其中保持环组件的机械元件保持严格的平面平坦度,刚性,高公差和表面稳定性控制。 此外,从塑料保持和背衬环组件(32)的结构中消除了胶水,粘合剂和环氧树脂。 此外,消除了通常与经历抛光的化学浆料和基底层直接接触的粘合剂的不利的化学反应和污染。 结果,本发明为保持环的供应商和制造商提供了低成本的替代方案,并且有助于在无限期内更换,修复和再循环固定环的方法,从而减少了可消耗的废料。 此外,环组件在后修复之后保持均匀的机械性能和严格的公差,从而降低变异性并保持工艺一致性。

    APPARATUS AND METHODS FOR ALIGNING A SURFACE OF AN ACTIVE RETAINER RING WITH A WAFER SURFACE FOR CHEMICAL MECHANICAL POLISHING
    9.
    发明申请
    APPARATUS AND METHODS FOR ALIGNING A SURFACE OF AN ACTIVE RETAINER RING WITH A WAFER SURFACE FOR CHEMICAL MECHANICAL POLISHING 审中-公开
    用于化学机械抛光用于表面的活性保持环的表面的装置和方法

    公开(公告)号:WO02078900A3

    公开(公告)日:2003-04-10

    申请号:PCT/US0210153

    申请日:2002-03-28

    CPC classification number: B24B37/32 B24B37/16

    Abstract: A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface 210 of a wafer carrier 212 so that a wafer axis 224 of rotation is gimballed for universal movement relative to a spindle axis 218 of rotation of a wafer spindle 220 . A retainer ring 226 limits wafer movement on the carrier surface 210 perpendicular to the wafer axis. The retainer ring 226 is mounted on and movable relative to the wafer carrier 212 . A linear bearing 230 is configured with a housing 320 and a shaft 326 so that a direction of permitted movement between the wafer carrier 212 and the retainer ring 226 is only movement parallel to the wafer axis 224, so that a wafer plane and a retainer ring 226 may be co-planar.

    Abstract translation: CMP系统和方法减少了晶片的化学机械抛光边缘的边缘轮廓与边缘内的晶片的化学机械抛光中心部分的中心轮廓之间的差异的原因。 晶片安装在晶片载体212的载体表面210上,使得晶片轴线224旋转以相对于晶片主轴220的主轴轴线218进行通用移动。 保持环226限制垂直于晶片轴线的载体表面210上的晶片移动。 保持环226安装在晶片载体212上并相对于晶片载体212可移动。 线性轴承230被构造为具有壳体320和轴326,使得晶片载体212和保持环226之间允许的移动方向仅仅是平行于晶片轴线224的运动,使得晶片平面和保持环 226可以是共面的。

    A WORKPIECE CARRIER WITH ADJUSTABLE PRESSURE ZONES AND BARRIERS
    10.
    发明申请
    A WORKPIECE CARRIER WITH ADJUSTABLE PRESSURE ZONES AND BARRIERS 审中-公开
    具有可调节压力区和障碍物的工作载体

    公开(公告)号:WO0174534A3

    公开(公告)日:2002-02-07

    申请号:PCT/US0109099

    申请日:2001-03-20

    CPC classification number: B24B37/30 B24B37/32 B24B49/16

    Abstract: An apparatus and method are disclosed for planarizing a wafer in a carrier (156) with adjustable pressure zones (111-114) and adjustable barriers (101-104) between zones. The carrier has an independently controlled central zone (111) and concentric surrounding zones (112-114) for distributing the pressure on the backside of a wafer while the wafer is being pressed against an abrasive surface in a chemical-mechanical polishing tool. The pressure zones (111-114) may be created by mounting an elastic web diaphragm (100) to a carrier housing (154) that has a plurality of recesses (111-114). A corresponding plurality of elastic ring shaped ribs may extend from the web diaphragm opposite the recesses (131-134). The plurality of ring shaped ribs (101-104) thereby defines a central zone surrounded by one or more concentric surrounding zones (112, 114). The zones (111-114) and barriers (101-104) may be individually pressurized by utilizing corresponding fluid communication paths (141-144) during the planarization process.

    Abstract translation: 公开了一种用于在具有可调压区(111-114)和区之间的可调壁(101-104)的载体(156)中平坦化晶片的装置和方法。 载体具有独立控制的中心区域(111)和同心围绕区域(112-114),用于在晶片在化学机械抛光工具中被压靠在研磨表面上时将压力分布在晶片的背面。 压力区(111-114)可以通过将弹性腹板隔膜(100)安装到具有多个凹部(111-114)的托架壳体(154)上而形成。 相应的多个弹性环形肋可以从腹板隔膜相对于凹槽(131-134)延伸。 多个环形肋(101-104)由此限定由一个或多个同心围绕区域(112,114)围绕的中心区域。 可以在平坦化过程期间通过利用相应的流体连通路径(141-144)来单独加压区域(111-114)和阻挡层(101-104)。

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