公开(公告)号：WO03052808A2

公开(公告)日：2003-06-26

申请号：PCT/US0239906

申请日：2002-12-12

Applicant: APPLIED MATERIALS INC ,  JOSHI AJEY M ,  NG PUI MAN AGNES ,  STINNETT JAMES A ,  DADU USAMA ,  REGIS JASON

Inventor： JOSHI AJEY M ,  NG PUI MAN AGNES ,  STINNETT JAMES A ,  DADU USAMA ,  REGIS JASON

IPC: H01L21/311 ,  H01L21/60

CPC classification number: H01L21/76897 ,  H01J37/3266 ,  H01L21/31116

Abstract: A method and apparatus are provided for etching semiconductor and dielectric substrates through the use of plasmas based on mixtures of a first gas having the formula CaFb, and a second gas having the formula CxHyFz, wherein a/b >/= 2/3, and wherein x/z >/= 1/2. The mixtures may be used in low or medium density plasmas sustained in a magnetically enhanced reactive ion chamber to provide a process that exhibits excellent corner layer selectivity, photo resist selectivity, under layer selectivity, and profile and bottom CD control. The percentages of the first and second gas may be varied during etching to provide a plasma that etches undoped oxide films or to provide an etch stop on such films.

Abstract translation: 提供了一种方法和装置，用于通过使用基于具有式CaFb的第一气体的混合物的等离子体和具有式C x H y F z的第二气体来蚀刻半导体和介电衬底，其中a / b> / = 2/3，和 其中x / z> / = 1/2。 混合物可以用于在磁增强反应离子室中维持的低或中等密度等离子体，以提供显示出优异的角层选择性，光刻抗蚀剂选择性，底层选择性以及轮廓和底部CD控制的方法。 在蚀刻期间可以改变第一和第二气体的百分比，以提供蚀刻未掺杂的氧化物膜的等离子体或在这种膜上提供蚀刻停止。

公开(公告)号：WO2017015146A3

公开(公告)日：2017-03-16

申请号：PCT/US2016042598

申请日：2016-07-15

Applicant: APPLIED MATERIALS INC

Inventor： NG HOU T ,  PATIBANDLA NAG B ,  JOSHI AJEY M ,  SWAMINATHAN BHARATH ,  KUMAR ASHAVANI ,  NG ERIC ,  FREY BERNARD ,  KRISHNAN KASIRAMAN

IPC: B29C67/00 ,  B33Y40/00

CPC classification number: B22F3/1055 ,  B22F2003/1056 ,  B22F2003/1058 ,  B29C64/153 ,  B29C64/20 ,  B29C64/40 ,  B29C67/0077 ,  B29C67/0085 ,  B29C67/0092 ,  B33Y10/00 ,  B33Y30/00 ,  C04B35/653 ,  C04B2235/6026

Abstract: Additive manufacturing of an object includes dispensing a plurality of successive layers of powder over a top surface of a platform, fusing an object region in each of the plurality of successive layers to form the object, and fusing a brace region in a particular layer from the plurality of layers to form a brace structure to inhibit lateral motion of the powder. The brace structure is spaced apart from the particular object region by a gap of unfused powder.

Abstract translation: 物体的添加剂制造包括在平台的顶表面上分配多个连续的粉末层，将多个连续层中的每一个中的物体区域熔合以形成物体，以及将特定层中的支撑区域与 多个层以形成支撑结构以抑制粉末的横向运动。 支撑结构与特定物体区域间隔开未填充粉末的间隙。

公开(公告)号：WO2016187624A3

公开(公告)日：2017-03-16

申请号：PCT/US2016043352

申请日：2016-07-21

Applicant: APPLIED MATERIALS INC

Inventor： JOSHI AJEY M ,  KUMAR ASHAVANI ,  KRISHNAN KASIRAMAN ,  PATIBANDLA NAG B

IPC: B29C67/00 ,  B33Y40/00 ,  B33Y70/00

CPC classification number: B28B1/001 ,  B22F3/008 ,  B22F3/1055 ,  B22F2998/10 ,  B22F2999/00 ,  B29C67/00 ,  B33Y10/00 ,  B33Y40/00 ,  B33Y70/00 ,  C04B35/651 ,  C04B35/78 ,  C04B2235/3217 ,  C04B2235/3418 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/407 ,  C04B2235/65 ,  C22C29/12 ,  C22C32/0015 ,  C22C1/051 ,  C22C1/053 ,  B22F3/1039

Abstract: A method of additive manufacturing to form a component comprises successively depositing a plurality of layers to form the component. Depositing at least one of the plurality of layers includes depositing a layer of a first particulate precursor over a platen, depositing a second particulate precursor on portions of the platen over the layer of the first particulate precursor specified by a controller, and directing energy to the second particulate precursor deposited on the portion of the platen to cause an exothermic chemical reaction between the first particulate precursor and the second particulate precursor. The exothermic chemical reaction produces heat that sinters products of the chemical reaction to fabricate the layer of the component.

Abstract translation: 形成组分的添加剂制造方法包括连续沉积多个层以形成组分。 沉积多个层中的至少一个层包括在压板上沉积第一颗粒前体层，将第二颗粒前体沉积在由控制器指定的第一颗粒前体的层上的压板的部分上，并将能量引导到 第二颗粒前体沉积在压板的部分上以引起第一颗粒前体和第二颗粒前体之间的放热化学反应。 放热化学反应产生的热量会烧结化学反应的产物以制造组分的层。