公开(公告)号：WO2010088186A3

公开(公告)日：2010-11-04

申请号：PCT/US2010021984

申请日：2010-01-25

Applicant: APPLIED MATERIALS INC ,  PATIBANDLA NAG B

Inventor： PATIBANDLA NAG B

IPC: H01G9/042 ,  H01G9/058

CPC classification number: H01G9/058 ,  H01G9/016 ,  H01G11/34 ,  H01G11/46 ,  H01G11/50 ,  H01G11/86 ,  Y02E60/13

Abstract: A method of manufacturing a high surface area per unit weight carbon electrode includes providing a substrate, depositing a carbon-rich material on the substrate to form a film, and after the depositing, activating the carbon-rich material to increase the surface area of the film of carbon-rich material. Due to the activation process being after deposition, this method enables use of low cost carbon-rich material to form a carbon electrode in the capacitor. The electrode may be used in capacitors, ultracapacitors and lithium ion batteries. The substrate may be part of the electrode, or it may be sacrificial - being consumed during the activation process. The carbon-rich material may include any of carbonized material, carbon aerogel and metal oxides, such as manganese and ruthenium oxide. The activation may include exposing the carbon-rich material to carbon dioxide at elevated temperature, in the range of 300 to 900 degrees centigrade. This method may be used to make both symmetric and asymmetric ultracapacitors.

Abstract translation: 制造每单位重量碳电极的高表面积的方法包括提供基底，在基底上沉积富碳材料以形成膜，并且在沉积之后，活化富碳材料以增加表面积 富碳材料薄膜。 由于活化过程在沉积之后，该方法使得能够使用低成本的富碳材料在电容器中形成碳电极。 该电极可用于电容器，超级电容器和锂离子电池。 衬底可以是电极的一部分，或者它可以是牺牲性的 - 在激活过程中被消耗。 富碳材料可以包括任何碳化材料，碳气凝胶和金属氧化物，例如锰和氧化钌。 活化可以包括在300摄氏度至900摄氏度的范围内的高温下将富碳材料暴露于二氧化碳。 该方法可用于制造对称和不对称超级电容器。

公开(公告)号：WO2012082788A3

公开(公告)日：2012-08-16

申请号：PCT/US2011064722

申请日：2011-12-13

Applicant: APPLIED MATERIALS INC ,  ZHU MINGWEI ,  AGRAWAL VIVEK ,  PATIBANDLA NAG B ,  NALAMASU OMKARAM

Inventor： ZHU MINGWEI ,  AGRAWAL VIVEK ,  PATIBANDLA NAG B ,  NALAMASU OMKARAM

IPC: H01L21/203 ,  H01L33/00

CPC classification number: H01L21/0254 ,  C23C14/0641 ,  C23C14/568 ,  C23C16/34 ,  C23C28/04 ,  C23C28/044 ,  C30B23/02 ,  C30B25/08 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0095

Abstract: Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described. For example, a multi-chamber system includes a physical vapor deposition (PVD) chamber having a target composed of aluminum. A chamber is also included and is adapted to deposit un-doped or n-type gallium nitride, or both. In another example, a method of fabricating a light-emitting diode (LED) structure includes forming an aluminum nitride layer above a substrate in a physical vapor deposition (PVD) chamber of a multi-chamber system. An un-doped or n-type gallium nitride layer is formed on the aluminum nitride layer in a second chamber of the multi-chamber system.

Abstract translation: 描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。 例如，多室系统包括具有由铝组成的靶的物理气相沉积（PVD）室。 还包括一个室，适用于沉积未掺杂或n型氮化镓，或两者。 在另一示例中，制造发光二极管（LED）结构的方法包括在多室系统的物理气相沉积（PVD）室中在衬底上形成氮化铝层。 在多室系统的第二室中的氮化铝层上形成未掺杂或n型氮化镓层。

公开(公告)号：WO2011143449A3

公开(公告)日：2012-04-05

申请号：PCT/US2011036279

申请日：2011-05-12

Applicant: APPLIED MATERIALS INC ,  GEE JAMES M ,  GAY CHARLES ,  PATIBANDLA NAG B ,  NALAMASU OMKARAM ,  SINGH KAUSHAL K

Inventor： GEE JAMES M ,  GAY CHARLES ,  PATIBANDLA NAG B ,  NALAMASU OMKARAM ,  SINGH KAUSHAL K

IPC: H01L31/042 ,  H01L31/0236 ,  H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell.

Abstract translation: 本发明的实施例提供一种薄单晶硅膜太阳能电池及其形成方法。 该方法包括在硅生长衬底上形成薄的单晶硅层，随后在薄的单晶硅膜上和/或上形成前或后太阳能电池结构。 该方法还包括将薄单晶硅膜附着到机械载体上，然后沿生长衬底和薄单晶硅膜之间形成的解理平面从薄单晶硅膜分离生长衬底。 然后在与机械载体相对的薄单晶硅膜上和/或上形成正面或背面的太阳能电池结构，以完成太阳能电池的形成。

公开(公告)号：WO2017015146A3

公开(公告)日：2017-03-16

申请号：PCT/US2016042598

申请日：2016-07-15

Applicant: APPLIED MATERIALS INC

Inventor： NG HOU T ,  PATIBANDLA NAG B ,  JOSHI AJEY M ,  SWAMINATHAN BHARATH ,  KUMAR ASHAVANI ,  NG ERIC ,  FREY BERNARD ,  KRISHNAN KASIRAMAN

IPC: B29C67/00 ,  B33Y40/00

CPC classification number: B22F3/1055 ,  B22F2003/1056 ,  B22F2003/1058 ,  B29C64/153 ,  B29C64/20 ,  B29C64/40 ,  B29C67/0077 ,  B29C67/0085 ,  B29C67/0092 ,  B33Y10/00 ,  B33Y30/00 ,  C04B35/653 ,  C04B2235/6026

Abstract: Additive manufacturing of an object includes dispensing a plurality of successive layers of powder over a top surface of a platform, fusing an object region in each of the plurality of successive layers to form the object, and fusing a brace region in a particular layer from the plurality of layers to form a brace structure to inhibit lateral motion of the powder. The brace structure is spaced apart from the particular object region by a gap of unfused powder.

Abstract translation: 物体的添加剂制造包括在平台的顶表面上分配多个连续的粉末层，将多个连续层中的每一个中的物体区域熔合以形成物体，以及将特定层中的支撑区域与 多个层以形成支撑结构以抑制粉末的横向运动。 支撑结构与特定物体区域间隔开未填充粉末的间隙。

公开(公告)号：WO2016187624A3

公开(公告)日：2017-03-16

申请号：PCT/US2016043352

申请日：2016-07-21

Applicant: APPLIED MATERIALS INC

Inventor： JOSHI AJEY M ,  KUMAR ASHAVANI ,  KRISHNAN KASIRAMAN ,  PATIBANDLA NAG B

IPC: B29C67/00 ,  B33Y40/00 ,  B33Y70/00

CPC classification number: B28B1/001 ,  B22F3/008 ,  B22F3/1055 ,  B22F2998/10 ,  B22F2999/00 ,  B29C67/00 ,  B33Y10/00 ,  B33Y40/00 ,  B33Y70/00 ,  C04B35/651 ,  C04B35/78 ,  C04B2235/3217 ,  C04B2235/3418 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/407 ,  C04B2235/65 ,  C22C29/12 ,  C22C32/0015 ,  C22C1/051 ,  C22C1/053 ,  B22F3/1039

Abstract: A method of additive manufacturing to form a component comprises successively depositing a plurality of layers to form the component. Depositing at least one of the plurality of layers includes depositing a layer of a first particulate precursor over a platen, depositing a second particulate precursor on portions of the platen over the layer of the first particulate precursor specified by a controller, and directing energy to the second particulate precursor deposited on the portion of the platen to cause an exothermic chemical reaction between the first particulate precursor and the second particulate precursor. The exothermic chemical reaction produces heat that sinters products of the chemical reaction to fabricate the layer of the component.

Abstract translation: 形成组分的添加剂制造方法包括连续沉积多个层以形成组分。 沉积多个层中的至少一个层包括在压板上沉积第一颗粒前体层，将第二颗粒前体沉积在由控制器指定的第一颗粒前体的层上的压板的部分上，并将能量引导到 第二颗粒前体沉积在压板的部分上以引起第一颗粒前体和第二颗粒前体之间的放热化学反应。 放热化学反应产生的热量会烧结化学反应的产物以制造组分的层。