公开(公告)号：WO0237528A3

公开(公告)日：2003-04-24

申请号：PCT/US0145534

申请日：2001-10-31

Applicant: APPLIED MATERIALS INC

Inventor： SUBRAMANI ANANTHA ,  KELKAR UMESH ,  FU JIANMING ,  GOPALRAJA PRABURAM

IPC: H05H1/46 ,  C23C14/35 ,  H01J37/34

CPC classification number: H01J37/3423 ,  H01J37/3405 ,  H01J37/3455

Abstract: A plasma sputter reactor including a target with an annular vault formed in a surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target. The lower frame supports the target while the upper frame supports the magnetron, including the magnets adjacent the lower frame. The inner magnet assembly has a cooling water passage passing to the bottom of the inner magnet to inject the cooling water to the bottom of the well. The cooling water is stirred by the rotating roof magnetron and leaves the water bath through inlets formed in the bottom frame but exists from the top frame.

Abstract translation: 一种等离子体溅射反应器，其包括具有环形拱顶的靶，该环形拱顶形成在面向待溅射涂层的晶片的表面上，并且具有内壁和外侧壁以及其上方的屋顶。 在管状内侧壁之间的靶的后部形成有孔。 与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件，位于内侧壁后面的另一极性的可旋转管状磁体组件，以及可在屋顶上方旋转的小型不平衡磁控管 关于目标的中心轴。 下框架支撑目标，而上框架支撑磁控管，包括与下框架相邻的磁体。 内部磁体组件具有通过内部磁体底部的冷却水通道，以将冷却水注入到井的底部。 冷却水由旋转屋顶磁控管搅拌，并通过形成在底部框架中的入口离开水浴，但是从顶部框架存在。

公开(公告)号：WO2004100231A2

公开(公告)日：2004-11-18

申请号：PCT/US2004014406

申请日：2004-05-04

Applicant: APPLIED MATERIALS INC

Inventor： GOPALRAJA PRABURAM ,  TANG XIANMIN ,  FU JIANMING ,  PERRIN MARK A ,  WANG JEAN YUE PHILLIP ,  SUNDARRAJAN ARVIND ,  ZHANG HONG ,  YU JICK ,  KELKAR UMESH ,  XU ZHENG ,  CHEN FUSEN

IPC: C23C14/04 ,  C23C14/34 ,  C23C14/46 ,  C23C14/58 ,  H01J37/305 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/00

CPC classification number: H01J37/34 ,  C23C14/046 ,  C23C14/3442 ,  C23C14/5833 ,  H01J37/3053 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865

Abstract: In conjunction with sputtering a metal, especially copper, into high aspect-ratio holes in a wafer, an oblique ion milling method in which argon ions or other particles having energies in the range of 200 to 1500e V are directed to the wafer at between 10 and 35° to the wafer surface to sputter etch material sputter deposited preferentially on the upper corners of the holes. The milling may be performed in the sputter deposition chamber either simultaneously with the deposition or after it or performed afterwards in a separate milling reactor. A plurality of ion sources arranged around the chamber improve angular uniformity or arranged axially improve radial uniformity or vary the angle of incidence. An annular ion source about the chamber axis allows a plasma current loop. Anode layer ion sources and sources composed of copper are advantageous.

Abstract translation: 结合将金属，特别是铜溅射到晶片中的高纵横比孔中，其中具有在200至1500eV范围内的能量的氩离子或其它颗粒的倾斜离子研磨方法在10 并且与晶片表面成35°的溅射蚀刻材料溅射沉积优先在孔的上角上。 研磨可以在溅射沉积室中同时进行沉积，或者在沉积之后或之后在单独的研磨反应器中进行。 围绕腔室布置的多个离子源提高了角度均匀性或者轴向地改变径向均匀性或改变入射角。 围绕腔室轴线的环形离子源允许等离子体电流回路。 阳极层离子源和由铜组成的源是有利的。