公开(公告)号：WO0211187A3

公开(公告)日：2002-12-19

申请号：PCT/US0123702

申请日：2001-07-30

Applicant: APPLIED MATERIALS INC

Inventor： MILLER MICHAEL A ,  CHIANG TONY ,  DING PEIJUN ,  FU JIANMING ,  TANG HOWARD

IPC: C23C14/06 ,  C23C14/35 ,  C30B25/02 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/76843 ,  C23C14/0641 ,  C23C14/35 ,  C30B25/02 ,  C30B29/38 ,  H01J37/3408 ,  H01J37/3441 ,  H01L21/28568

Abstract: A method of forming a tantalum-containing layer on a substrate is described. The tantalum-containing layer is formed using a physical vapor deposition technique wherein a magnetic field in conjunction with an electric field function to confine material sputtered from a tantalum-containing target within a reaction zone of a deposition chamber. The electric field is generated by applying a power of at least 8 kilowatts to the tantalum-containing target. The magnetic field is generated from a magnetron including a first magnetic pole of a first magnetic polarity surrounded by a second magnetic pole of a second magnetic polarity opposite the first magnetic polarity. The first magnetic pole preferably has a magnetic flux at least about 30% greater than a magnetic flux of the second magnetic pole. The tantalum-containing layer deposition method is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is formed.

Abstract translation: 描述了在基板上形成含钽层的方法。 使用物理气相沉积技术形成含钽层，其中与电场结合的磁场用于限制从沉积室的反应区域内的含钽靶溅射的材料。 通过将至少8千瓦的功率施加到含钽靶产生电场。 该磁场由磁控管产生，该磁控管包括由与第一磁极性相反的第二磁极的第二磁极包围的第一磁极的第一磁极。 第一磁极优选地具有比第二磁极的磁通大至少大约30％的磁通量。 含钽层沉积方法与集成电路制造工艺兼容。 在一个集成电路制造工艺中，形成互连结构。

公开(公告)号：WO0165588A3

公开(公告)日：2002-02-07

申请号：PCT/US0106954

申请日：2001-03-02

Applicant: APPLIED MATERIALS INC

Inventor： FU JIANMING

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3402

Abstract: A method and apparatus for performing highly ionized and low energy physical vapor deposition (PVD). The pressure is selected to increase the ionization of atoms sputtered from a target and de-energize these ions. The highly ionized, low energy target atoms are more easily attracted to a substrate that is biased.

Abstract translation: 一种用于进行高电离和低能量物理气相沉积（PVD）的方法和装置。 选择压力以增加从靶溅射的原子的电离并使这些离子断电。 高度电离的低能量靶原子更容易被吸引到被偏压的衬底上。

公开(公告)号：WO2004100231A2

公开(公告)日：2004-11-18

申请号：PCT/US2004014406

申请日：2004-05-04

Applicant: APPLIED MATERIALS INC

Inventor： GOPALRAJA PRABURAM ,  TANG XIANMIN ,  FU JIANMING ,  PERRIN MARK A ,  WANG JEAN YUE PHILLIP ,  SUNDARRAJAN ARVIND ,  ZHANG HONG ,  YU JICK ,  KELKAR UMESH ,  XU ZHENG ,  CHEN FUSEN

IPC: C23C14/04 ,  C23C14/34 ,  C23C14/46 ,  C23C14/58 ,  H01J37/305 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/00

CPC classification number: H01J37/34 ,  C23C14/046 ,  C23C14/3442 ,  C23C14/5833 ,  H01J37/3053 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865

Abstract: In conjunction with sputtering a metal, especially copper, into high aspect-ratio holes in a wafer, an oblique ion milling method in which argon ions or other particles having energies in the range of 200 to 1500e V are directed to the wafer at between 10 and 35° to the wafer surface to sputter etch material sputter deposited preferentially on the upper corners of the holes. The milling may be performed in the sputter deposition chamber either simultaneously with the deposition or after it or performed afterwards in a separate milling reactor. A plurality of ion sources arranged around the chamber improve angular uniformity or arranged axially improve radial uniformity or vary the angle of incidence. An annular ion source about the chamber axis allows a plasma current loop. Anode layer ion sources and sources composed of copper are advantageous.

Abstract translation: 结合将金属，特别是铜溅射到晶片中的高纵横比孔中，其中具有在200至1500eV范围内的能量的氩离子或其它颗粒的倾斜离子研磨方法在10 并且与晶片表面成35°的溅射蚀刻材料溅射沉积优先在孔的上角上。 研磨可以在溅射沉积室中同时进行沉积，或者在沉积之后或之后在单独的研磨反应器中进行。 围绕腔室布置的多个离子源提高了角度均匀性或者轴向地改变径向均匀性或改变入射角。 围绕腔室轴线的环形离子源允许等离子体电流回路。 阳极层离子源和由铜组成的源是有利的。

公开(公告)号：WO2008005216A3

公开(公告)日：2008-03-20

申请号：PCT/US2007014680

申请日：2007-06-25

Applicant: APPLIED MATERIALS INC ,  ARGHAVANI REZA ,  FU JIANMING

Inventor： ARGHAVANI REZA ,  FU JIANMING

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/10

CPC classification number: H01L29/6656 ,  C23C14/0641 ,  H01L21/2855 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/792

Abstract: A metal layer (62), especially a metal compound, induces strain into a gate channel (16) of a MOS transistor (60). Compressive strain of over 4GPa is available from sputter deposited TiN. The amount of strain can be controlled at least up to 1 IGPa, for example, by wafer biasing. The compressive strain may induce compressive strain in a PMOS channel when deposited around the channel and induce tensile strain in an NMOS channel when deposited over the channel.

Abstract translation: 金属层（62），尤其是金属化合物，引入到MOS晶体管（60）的栅极沟道（16）中的应变。 溅射沉积的TiN可获得超过4GPa的压缩应变。 例如，通过晶片偏置，应变量可以控制在至少1IGPa。 当沉积在沟道周围时，压缩应变可以在PMOS沟道中引起压缩应变，并且当沉积在沟道上时在NMOS沟道中引起拉伸应变。

公开(公告)号：WO2006121604A3

公开(公告)日：2007-09-13

申请号：PCT/US2006015523

申请日：2006-04-25

Applicant: APPLIED MATERIALS INC ,  WANG JENN YUE ,  WANG WEL D ,  WANG RONGJIUM ,  TANAKA YOICHIRO ,  CHUNG HUA ,  ZHANG HONG ,  YU JICK ,  GOPALRAJA PRABURAM ,  FU JIANMING

Inventor： WANG JENN YUE ,  WANG WEL D ,  WANG RONGJIUM ,  TANAKA YOICHIRO ,  CHUNG HUA ,  ZHANG HONG ,  YU JICK ,  GOPALRAJA PRABURAM ,  FU JIANMING

IPC: C23C14/34 ,  H01L21/44 ,  H01L27/095

CPC classification number: B32B15/018 ,  C23C14/3414 ,  H01L21/2855 ,  H01L21/76844 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24917 ,  H01L2924/00

Abstract: A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer (82) comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not require to be so. The barrier layer may be sputtered from a target (90) of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer (112) may be formed of an alloy of copper and ruthenium in contact to a barrier layer (70) over the dielectric (66).

Abstract translation: 用于在互连结构中沉积导电屏障或其它衬垫层的制造方法，产品结构，制造方法和溅射靶。 阻挡层（82）包括诸如钌/钽合金的难熔贵金属合金的导电金属，其可以是无定形的，尽管不需要这样。 阻挡层可以从类似组成的靶（90）溅射。 阻挡层和靶组成可以选自难熔金属和铂族金属以及RuTa的组合。 铜高贵种子层（112）可以由铜和钌的合金形成，与电介质（66）上的阻挡层（70）接触。

公开(公告)号：WO0237528A3

公开(公告)日：2003-04-24

申请号：PCT/US0145534

申请日：2001-10-31

Applicant: APPLIED MATERIALS INC

Inventor： SUBRAMANI ANANTHA ,  KELKAR UMESH ,  FU JIANMING ,  GOPALRAJA PRABURAM

IPC: H05H1/46 ,  C23C14/35 ,  H01J37/34

CPC classification number: H01J37/3423 ,  H01J37/3405 ,  H01J37/3455

Abstract: A plasma sputter reactor including a target with an annular vault formed in a surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target. The lower frame supports the target while the upper frame supports the magnetron, including the magnets adjacent the lower frame. The inner magnet assembly has a cooling water passage passing to the bottom of the inner magnet to inject the cooling water to the bottom of the well. The cooling water is stirred by the rotating roof magnetron and leaves the water bath through inlets formed in the bottom frame but exists from the top frame.

Abstract translation: 一种等离子体溅射反应器，其包括具有环形拱顶的靶，该环形拱顶形成在面向待溅射涂层的晶片的表面上，并且具有内壁和外侧壁以及其上方的屋顶。 在管状内侧壁之间的靶的后部形成有孔。 与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件，位于内侧壁后面的另一极性的可旋转管状磁体组件，以及可在屋顶上方旋转的小型不平衡磁控管 关于目标的中心轴。 下框架支撑目标，而上框架支撑磁控管，包括与下框架相邻的磁体。 内部磁体组件具有通过内部磁体底部的冷却水通道，以将冷却水注入到井的底部。 冷却水由旋转屋顶磁控管搅拌，并通过形成在底部框架中的入口离开水浴，但是从顶部框架存在。

公开(公告)号：WO0237529A3

公开(公告)日：2002-12-27

申请号：PCT/US0148578

申请日：2001-10-30

Applicant: APPLIED MATERIALS INC

Inventor： WANG WEI ,  GOPALRAJA PRABURAM ,  FU JIANMING ,  XU ZHENG

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3444 ,  H01J37/3408 ,  H01J37/3455

Abstract: A magnetron sputter reactor having a target that is pulsed with a duty cycle of less than 10% and preferably less than 1% and further having a small magnetron of area less than 20% of the target area rotating about the target center, whereby a very high plasma density is produced during the pulse adjacent to the area of the magnetron. The power pulsing frequency needs to be desynchronized from the rotation frequency so that the magnetron does not overlie the same area of the magnetron during different pulses. Advantageously, the power pulses are delivered above a DC background level sufficient to continue to excite the plasma so that no ignition is required for each pulse.

Abstract translation: 一种磁控溅射反应器，其具有以小于10％，优选小于1％的占空比脉冲化的靶，并且还具有面积小于围绕目标中心旋转的靶面积的20％的小磁控管， 在靠近磁控管区域的脉冲期间产生高等离子体密度。 功率脉冲频率需要与旋转频率不同步，以便在不同脉冲期间磁控管不会覆盖磁控管的相同区域。 有利地，功率脉冲被输送到足以继续激励等离子体的DC背景电平以上，从而不需要每个脉冲的点火。

公开(公告)号：WO0022648A9

公开(公告)日：2000-09-21

申请号：PCT/US9923015

申请日：1999-10-01

Applicant: APPLIED MATERIALS INC

Inventor： XU ZHENG ,  CHEN FUSEN ,  FU JIANMING

IPC: C23C14/35 ,  H01J37/32 ,  H01J37/34

CPC classification number: H01J37/321 ,  C23C14/358 ,  H01J37/3405 ,  H01J2237/3327

Abstract: A plasma chamber in a semiconductor fabrication system improves the uniformity of a high density plasma by optimizing a ratio of RF power from a first coil, surrounding and inductively coupled into the high density plasma, to RF power from a second coil, positioned above a central region and inductively coupled into the high density plasma. It has also been found that an increase in RF power supplied to the second coil positioned above the central region relative to RF power supplied to the first coil surrounding the high density plasma tends to increase the relative density of the plasma toward the center of the high density plasma. It is believed that RF power supplied to the second coil positioned above the central region substrate tends to add more electrons into the central region of the high density plasma to compensate for electrons recombining with plasma ions. A balance can thus be struck between RF power supplied to the first and second coils to increase plasma uniformity in the high density plasma, which may cause an increase in the uniformity of ionization of the sputtered target material atoms by the high density plasma.

Abstract translation: 半导体制造系统中的等离子体室通过优化来自环绕和感应耦合到高密度等离子体中的第一线圈的RF功率与来自第二线圈的RF功率的比率来改善高密度等离子体的均匀性， 区域并感应耦合成高密度等离子体。 还发现，相对于供给包围高密度等离子体的第一线圈的RF功率，提供给位于中心区域上方的第二线圈的RF功率的增加倾向于增加等离子体朝向高的中心的相对密度 密度等离子。 据信，提供给位于中央区域衬底上方的第二线圈的RF功率倾向于将更多电子添加到高密度等离子体的中心区域中以补偿与等离子体离子重组的电子。 因此，可以在提供给第一和第二线圈的RF功率之间实现平衡，以提高高密度等离子体中的等离子体均匀性，这可能导致由高密度等离子体引起的溅射目标材料原子的电离均匀性的增加。