公开(公告)号：WO2019086397A1

公开(公告)日：2019-05-09

申请号：PCT/EP2018/079614

申请日：2018-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： BAEK, Jonghoon ,  ABRAHAM, Mathew, Cheeran

IPC: G03F7/20 ,  H05G2/00

CPC classification number: G03F7/70925 ,  G03F7/70033 ,  H05G2/00

Abstract: A method is described to clean a surface of an optic (115) within a chamber (125) of an extreme ultraviolet (EUV) light source (100). The chamber is held at a pressure below atmospheric pressure. The method includes generating a material in a plasma state at a location adjacent to the optic surface (110) and within the chamber, the generating comprising transforming a native material (135) that is already present within the vacuum chamber and adjacent the optic surface from a first state into the plasma state (130). The plasma state of the material includes free radicals of the material. The material in the plasma state is generated by enabling the material in the plasma state to pass over the optic surface to remove debris (107) from the optic surface without removing the optic from the EUV light source.

公开(公告)号：WO2017127182A1

公开(公告)日：2017-07-27

申请号：PCT/US2016/066412

申请日：2016-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： BAEK, Jonghoon ,  ABRAHAM, Mathew Cheeran ,  EVANS, David Robert ,  GAZZA, Jack Michael

IPC: A61N5/06 ,  G01J3/10 ,  H05G2/00 ,  B08B6/00

CPC classification number: H05G2/005 ,  G02B19/0095 ,  G02B27/0006 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70925 ,  G03F7/70933 ,  H05G2/008

Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.

Abstract translation: 在产生EUV光的同时移除目标材料碎片沉积物的系统和方法包括在EUV容器中原位产生氢自由基，靠近目标材料碎片沉积物并挥发目标材料碎片沉积物并吹扫 来自EUV容器的挥发性目标材料碎屑沉积物在EUV容器中不需要含氧物质。

公开(公告)号：WO2019158492A1

公开(公告)日：2019-08-22

申请号：PCT/EP2019/053350

申请日：2019-02-12

Applicant: ASML NETHERLANDS B.V.

Inventor： XIA, Chunguang ,  BAEK, Jonghoon ,  STEWART IV, John, Tom ,  LAFORGE, Andrew, David ,  VAN HEIJNSBERGEN, Deniz ,  EVANS, David, Robert ,  DZIOMKINA, Nina, Vladimirovna ,  MA, Yue

IPC: G03F7/20 ,  B08B5/00 ,  H05G2/00 ,  H05H1/24

Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.