公开(公告)号：WO2020234028A1

公开(公告)日：2020-11-26

申请号：PCT/EP2020/063077

申请日：2020-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： SMORENBERG, Pieter, Gerardus, Jacobus ,  SAPUTRA, Putra ,  ELBATTAY, Khalid ,  DERWIN, Paul ,  WERKMAN, Roy ,  JENSEN, Erik ,  YU, Hyun-Woo ,  SARMA, Gautam

IPC: G03F7/20

Abstract: The invention provides a method for determining a sampling scheme, which method comprises: - obtaining a first fingerprint model relating to a first spatial distribution of a performance parameter over a first portion of a semiconductor substrate and a second fingerprint model relating to a second spatial distribution of said performance parameter over a second portion of the semiconductor substrate; and - determining a sampling point corresponding to a measuring location on the semiconductor substrate for generating measurement data based on an expected reduction of a first uncertainty metric associated with evaluation of the first fingerprint model over the first portion and an expected reduction of a second uncertainty metric associated with evaluation of the second fingerprint model over the second portion.

公开(公告)号：WO2017153171A1

公开(公告)日：2017-09-14

申请号：PCT/EP2017/054053

申请日：2017-02-22

Applicant: ASML NETHERLANDS B.V.

Inventor： SCHMITT-WEAVER, Emil, Peter ,  ISMAIL, Amir, Bin ,  BHATTACHARYYA, Kaustuve ,  DERWIN, Paul

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70625 ,  G03F9/7088 ,  G03F9/7092

Abstract: Corrections (CPE) are calculated for use in controlling a lithographic apparatus (100). Using a metrology apparatus (140) a performance parameter is measured (200) at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted (210) to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated (230) for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data (312) is available, this is added (240) to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate (316) which is a combination of values (318) estimated by the process model and partly on real measurement data (312).

Abstract translation: 校正（CPE）被计算用于控制光刻设备（100）。 使用度量衡装置（140），在先前已应用光刻过程的一个或多个衬底上的采样位置处测量（200）性能参数。 将过程模型拟合（210）到所测量的性能参数，并且为整个衬底上的过程引起的效应提供上采样估计。 计算（230）用于控制光刻设备的校正，使用致动模型并且至少部分地基于拟合过程模型。 对于测量数据（312）可用的位置，将其添加（240）到估计以替换过程模型值。 因此，致动修正的计算基于修正的估计（316），该修正的估计（316）是由过程模型估计的值（318）和部分基于实际测量数据（312）的值的组合（318）。

公开(公告)号：WO2021001129A1

公开(公告)日：2021-01-07

申请号：PCT/EP2020/066108

申请日：2020-06-10

Applicant: ASML NETHERLANDS B.V.

Inventor： SMORENBERG, Pieter, Gerardus, Jacobus ,  SAPUTRA, Putra ,  DERWIN, Paul ,  ELBATTAY, Khalid

IPC: G03F7/20

Abstract: Disclosed is a method for determining an intra-field correction for control of a lithographic apparatus configured for exposing a pattern on an exposure field of a substrate, the method comprising: obtaining metrology data for use in determining the intra-field correction; determining an accuracy metric indicating a lower accuracy where the metrology data is not reliable and/or where the lithographic apparatus is limited in actuating a potential actuation input which is based on the metrology data; and determining said intra-field correction based at least partially on said accuracy metric.